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56 Flash Memory 68

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
JS28F512P30EFA by Micron Technology

JS28F512P30EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

512

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30TFA by Micron Technology

JS28F512P30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

110 ns

TOP BOOT

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

4,511

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

MT28EW01GABA1HJS-0AAT by Micron Technology

MT28EW01GABA1HJS-0AAT

Micron Technology

Micron Technology's MT28EW01GABA1HJS-0AAT is a 64MX16 NOR flash memory with 1073741824 bit density. Operating at -40 to 105 °C, it has a max access time of 105 ns and uses a programming voltage of 3V. Ideal for industrial applications, this flash memory features a small outline package with dual terminals and gull wing form factor.

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW01GABA1LJS-0AAT by Micron Technology

MT28EW01GABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Width: 14 mm;

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW512ABA1HJS-0AAT by Micron Technology

MT28EW512ABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

105 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28EW512ABA1LJS-0AAT by Micron Technology

MT28EW512ABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

105 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28FW512ABA1HJS-0AAT by Micron Technology

MT28FW512ABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Screening Level: AEC-Q100;

105 ns

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28FW512ABA1LJS-0AAT by Micron Technology

MT28FW512ABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

105 ns

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

MT28FW01GABA1HJS-0AAT by Micron Technology

MT28FW01GABA1HJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Width: 14 mm;

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28FW01GABA1LJS-0AAT by Micron Technology

MT28FW01GABA1LJS-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm

MT28EW128ABA1HPN-0SIT by Micron Technology

MT28EW128ABA1HPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

70 ns

8

R-PBGA-B56

e1

9 mm

134217728 bit

FLASH

16

1

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NOR TYPE

7 mm

MT28EW128ABA1LPN-0SIT by Micron Technology

MT28EW128ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

8

R-PBGA-B56

e1

9 mm

134217728 bit

FLASH

16

1

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NOR TYPE

7 mm

MT28EW256ABA1HPN-0SIT by Micron Technology

MT28EW256ABA1HPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOR TYPE

7 mm

MT28EW256ABA1LPN-0SIT by Micron Technology

MT28EW256ABA1LPN-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

70 ns

8

R-PBGA-B56

9 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1HPN-0SIT by Micron Technology

MT28EW512ABA1HPN-0SIT

Micron Technology

MT28EW512ABA1HPN-0SIT by Micron Technology is a 32MX16 flash memory IC with 33554432 words. It operates at 3V, has a very thin profile, and offers a max access time of 95ns. Ideal for industrial applications requiring high-density parallel memory solutions.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7 mm

MT28EW512ABA1LPN-0SIT by Micron Technology

MT28EW512ABA1LPN-0SIT

Micron Technology

Micron Technology's MT28EW512ABA1LPN-0SIT is a Flash Memory with 32MX16 organization, 8-bit width, and 33554432 words. Operating at -40 to 85 °C, it has a very thin profile package style suitable for industrial applications requiring fast access times of up to 95 ns.

95 ns

8

R-PBGA-B56

9 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7 mm

IS29GL128-70SLEB by Integrated Silicon Solution

IS29GL128-70SLEB

Integrated Silicon Solution

IS29GL128-70SLEB by Integrated Silicon Solution is a 128M Flash Memory with 134217728-bit memory density. It operates at 3V, has a max access time of 70ns, and supports asynchronous mode. Ideal for industrial applications requiring high-speed parallel memory with a small outline package design.

70 ns

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

1

1

56

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

14 mm

S29GL256S10GHB010 by Infineon Technologies

S29GL256S10GHB010

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 268435456 bit; Parallel or Serial: PARALLEL;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

8

3

1

256

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

S29GL128S10GHB010 by Infineon Technologies

S29GL128S10GHB010

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES; No. of Words: 16777216 words;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

BOTTOM/TOP

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

134217728 bit

FLASH

8

3

1

128

56

16777216 words

16M

ASYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm

S29GL256S10GHB013 by Infineon Technologies

S29GL256S10GHB013

Infineon Technologies

FLASH; No. of Terminals: 56; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 100 ns; Programming Voltage (V): 3;

100 ns

20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES

1

YES

YES

YES

2

100000 Write/Erase Cycles

R-PBGA-B56

9 mm

268435456 bit

FLASH

8

3

1

256

56

33554432 words

32M

ASYNCHRONOUS

105 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA56,8X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

32

PARALLEL

3

YES

AEC-Q100; TS 16949

1 mm

128K

.0002 Amp

100 mA

3.6 V

2.7 V

3

YES

CMOS

BALL

.8 mm

BOTTOM

YES

NAND TYPE

7 mm