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24 Flash Memory 226

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT25QL128ABB8E12-0AUT by Micron Technology

MT25QL128ABB8E12-0AUT

Micron Technology

Micron Technology's MT25QL128ABB8E12-0AUT is a 16MX8 flash memory with 133 MHz clock frequency, suitable for automotive applications. Operating at 3V, it offers 16777216 words of memory with a density of 134217728 bits. The package style is grid array, thin profile, making it ideal for space-constrained designs.

1

133 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS25WP064A-RHLE-TR by Integrated Silicon Solution

IS25WP064A-RHLE-TR

Integrated Silicon Solution

IS25WP064A-RHLE-TR by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. It operates at a max clock frequency of 133 MHz and has a package style of GRID ARRAY, THIN PROFILE. Ideal for industrial applications requiring high-speed synchronous operation in a compact form factor.

133 MHz

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT35XL01GBBA1G12-0AAT by Micron Technology

MT35XL01GBBA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL01GBBA2G12-0AAT by Micron Technology

MT35XL01GBBA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA1G12-0AAT by Micron Technology

MT35XL256ABA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA2G12-0AAT by Micron Technology

MT35XL256ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA1G12-0AAT by Micron Technology

MT35XL512ABA1G12-0AAT

Micron Technology

MT35XL512ABA1G12-0AAT by Micron Technology is a 512M Flash Memory with 536870912 bit density. It operates at 133 MHz clock frequency, has a thin profile grid array package style, and supports synchronous mode. Ideal for industrial applications requiring high memory capacity and reliable performance in harsh environments.

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA2G12-0AAT by Micron Technology

MT35XL512ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU02GCBA2G12-0AUT by Micron Technology

MT35XU02GCBA2G12-0AUT

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0AUT is a 256MX8 flash memory IC with 1.8V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications, it features AEC-Q100 screening level and operates in a temperature range of -40°C to 125°C.

200 MHz

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AAT by Micron Technology

MT35XU256ABA1G12-0AAT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AAT is a 256MX1 flash memory with 268M words. Operating at 166MHz, it has a voltage range of 1.7V to 2V and withstands industrial temperatures from -40°C to 105°C. Ideal for applications requiring high-speed synchronous operation in compact devices.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AUT by Micron Technology

MT35XU256ABA1G12-0AUT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AUT is a 256MX1 flash memory with 268Mbit density. Operating at 166MHz, it has a supply voltage range of 1.7V to 2V and supports automotive applications. With AEC-Q100 screening, this synchronous memory in grid array package offers high performance in harsh environments.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA2G12-0AUT by Micron Technology

MT35XU256ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

200 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU512ABA2G12-0AUT by Micron Technology

MT35XU512ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

200 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

W25Q01JVTBIQ by Winbond Electronics

W25Q01JVTBIQ

Winbond Electronics

Winbond Electronics' W25Q01JVTBIQ is a 128Mx8 Flash Memory with 133MHz clock frequency, suitable for industrial applications. Operating at 3V, it offers synchronous operation and a memory density of 1073741824 bits. With a thin profile package style and bottom terminal position, it is ideal for space-constrained designs.

2

133 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

W25Q128JWBIQ by Winbond Electronics

W25Q128JWBIQ

Winbond Electronics

W25Q128JWBIQ by Winbond Electronics is a 16MX8 NOR type flash memory with 133 MHz clock frequency and SPI serial bus. It operates at 1.8V, has 100000 write/erase cycles endurance, and is ideal for industrial applications requiring high-speed synchronous operation in a compact grid array package.

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.00005 Amp

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q064A13E1240E by Micron Technology

N25Q064A13E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

108 MHz

NO

20

COMMON

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

TOTEM POLE

PLASTIC/EPOXY

TBGA

BGA24, 5X5, 40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

SPI

.0001 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

HARDWARE/SOFTWARE

IS25WP512M-RHLA3-TR by Integrated Silicon Solution

IS25WP512M-RHLA3-TR

Integrated Silicon Solution

IS25WP512M-RHLA3-TR by Integrated Silicon Solution is a 64MX8 NOR flash memory with 112 MHz clock frequency. Operating at 1.8V, it offers 100000 write/erase cycles and supports SPI serial bus type. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125 °C temperature range.

112 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

.00026 Amp

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT25QL02GCBB8E12-0SITTR by Micron Technology

MT25QL02GCBB8E12-0SITTR

Micron Technology

Micron Technology's MT25QL02GCBB8E12-0SITTR is a 256MX8 NOR flash memory with 133 MHz clock frequency, 3V programming voltage. Ideal for industrial applications, it offers 100K write/erase cycles, SPI serial bus type, and operates in a temperature range of -40 to 85°C.

BOTTOM/TOP

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

SPI

.00013 Amp

94 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

IS25WX256-JHLA3 by Integrated Silicon Solution

IS25WX256-JHLA3

Integrated Silicon Solution

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Serial Bus Type: SPI;

200 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

9

AEC-Q100

1.2 mm

SPI

.00005 Amp

70 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

S25HS02GTFABHV153 by Infineon Technologies

S25HS02GTFABHV153

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Maximum Clock Frequency (fCLK): 166 MHz;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHB043 by Infineon Technologies

S26HL02GTFGBHB043

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B24; Maximum Supply Voltage (Vsup): 3.6 V;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHB050 by Infineon Technologies

S26HL02GTFGBHB050

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Maximum Operating Temperature: 105 Cel; Type: NOR TYPE;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHM053 by Infineon Technologies

S26HS02GTFPBHM053

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Type: NOR TYPE; Screening Level: AEC-Q100;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHM040 by Infineon Technologies

S26HL02GTFGBHM040

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Maximum Supply Voltage (Vsup): 3.6 V;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHM043 by Infineon Technologies

S26HL02GTFGBHM043

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM; Moisture Sensitivity Level (MSL): 3;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHB053 by Infineon Technologies

S26HS02GTFPBHB053

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 3; Package Style (Meter): GRID ARRAY;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS02GTFPBHV053 by Infineon Technologies

S28HS02GTFPBHV053

Infineon Technologies

S28HS02GTFPBHV053 by Infineon Technologies is a NOR type Flash Memory with 2GX1 organization and 166 MHz clock frequency. Operating at -40 to 105 °C, it has a memory density of 2147483648 bits. Suitable for applications requiring high-speed synchronous operation in electronic devices.

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHV033 by Infineon Technologies

S28HS01GTGZBHV033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Memory Density: 1073741824 bit; Organization: 1GX1;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHM050 by Infineon Technologies

S26HS02GTFPBHM050

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B24; Maximum Clock Frequency (fCLK): 166 MHz;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHB033 by Infineon Technologies

S28HS01GTGZBHB033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Organization: 1GX1; JESD-30 Code: S-PBGA-B24; Technology: CMOS;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

3

1

24

1073741824 words

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

GRID ARRAY

1.8

AEC-Q100

SPI

2 V

1.7 V

1.8

CMOS

BOTTOM

NOR TYPE

S28HS01GTGZBHV030 by Infineon Technologies

S28HS01GTGZBHV030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Maximum Supply Voltage (Vsup): 2 V;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHM033 by Infineon Technologies

S28HS01GTGZBHM033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Screening Level: AEC-Q100; Serial Bus Type: SPI;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHM030 by Infineon Technologies

S28HS01GTGZBHM030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM; Package Style (Meter): GRID ARRAY;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

125 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHI033 by Infineon Technologies

S28HS01GTGZBHI033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHM043 by Infineon Technologies

S26HS02GTFPBHM043

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Programming Voltage (V): 1.8; No. of Functions: 1;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHM040 by Infineon Technologies

S26HS02GTFPBHM040

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Screening Level: AEC-Q100;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

125 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHA033 by Infineon Technologies

S28HS01GTGZBHA033

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 2 V; Memory Density: 1073741824 bit;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHB030 by Infineon Technologies

S28HS01GTGZBHB030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Terminal Position: BOTTOM; Serial Bus Type: SPI;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

SPI

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHI030 by Infineon Technologies

S28HS01GTGZBHI030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Memory Width: 1; Operating Mode: SYNCHRONOUS;

200 MHz

S-PBGA-B24

1073741824 bit

FLASH

1

3

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

SPI

2 V

1.7 V

1.8

YES

CMOS

BOTTOM

NOR TYPE

S25HS02GTFABHV150 by Infineon Technologies

S25HS02GTFABHV150

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.8; Terminal Form: BALL;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHB043 by Infineon Technologies

S26HS02GTFPBHB043

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Memory Width: 1; Minimum Operating Temperature: -40 Cel;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHB050 by Infineon Technologies

S26HS02GTFPBHB050

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Memory Density: 2147483648 bit;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHB053 by Infineon Technologies

S26HL02GTFGBHB053

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Surface Mount: YES; Programming Voltage (V): 3;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HS02GTFPBHB040 by Infineon Technologies

S26HS02GTFPBHB040

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.8; Memory Density: 2147483648 bit;

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S26HL02GTFGBHB040 by Infineon Technologies

S26HL02GTFGBHB040

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: BGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 133 MHz; Maximum Operating Temperature: 105 Cel;

133 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

3

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS02GTFPBHV050 by Infineon Technologies

S28HS02GTFPBHV050

Infineon Technologies

S28HS02GTFPBHV050 by Infineon Technologies is a NOR type Flash Memory with 2GX1 organization, operating at up to 166 MHz clock frequency. It has a memory density of 2147483648 bits and operates on a nominal voltage of 1.8V. This synchronous flash memory is suitable for applications requiring high-speed data storage and retrieval in electronic devices.

166 MHz

S-PBGA-B24

2147483648 bit

FLASH

1

3

1

24

2147483648 words

2G

SYNCHRONOUS

105 Cel

-40 Cel

2GX1

PLASTIC/EPOXY

BGA

SQUARE

GRID ARRAY

1.8

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

NOR TYPE

S28HS01GTGZBHA030 by Infineon Technologies

S28HS01GTGZBHA030

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Output Characteristics: 3-STATE; Minimum Operating Temperature: -40 Cel;

200 MHz

25

300000 Write/Erase Cycles

S-PBGA-B24

8 mm

1073741824 bit

FLASH

8

3

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00016 Amp

173 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE

S25HS512TDPBHB013 by Infineon Technologies

S25HS512TDPBHB013

Infineon Technologies

FLASH; No. of Terminals: 24; Package Code: VBGA; Package Shape: SQUARE; Package Equivalence Code: BGA24,5X5,40; Maximum Seated Height: 1 mm;

133 MHz

25

1280000 Write/Erase Cycles

S-PBGA-B24

8 mm

536870912 bit

FLASH

8

3

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

VBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, VERY THIN PROFILE

SERIAL

1.8

AEC-Q100

1 mm

SPI

.00034 Amp

69 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOR TYPE

8 mm

HARDWARE