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24 Flash Memory 226

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
N25Q064A13E14D0E by Micron Technology

N25Q064A13E14D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

67108864 bit

FLASH

8

24

8388608 words

8M

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

BGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY

SERIAL

3/3.3

Not Qualified

SPI

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

N25Q128A13B1240E by Micron Technology

N25Q128A13B1240E

Micron Technology

N25Q128A13B1240E by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has a min data retention time of 20 years. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A23B1240E by Micron Technology

N25Q128A23B1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25L6435EXCI-10G by Macronix

MX25L6435EXCI-10G

Macronix

MX25L6435EXCI-10G by Macronix is a 3.3V NOR Flash Memory with 16Mx4 organization, SPI serial bus type, and 104MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K cycles, it offers a memory density of 67108864 bits in a compact GRID ARRAY package.

IT ALSO CONFIGURED AS 64M X 1

2

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

4

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3/3.3

2.7

Not Qualified

1.2 mm

SPI

Flash Memories

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

40

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11E1240E by Micron Technology

N25Q128A11E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11E1241E by Micron Technology

N25Q128A11E1241E

Micron Technology

Micron Technology's N25Q128A11E1241E is a 128M NOR flash memory with 108 MHz clock frequency, suitable for industrial applications. It operates at 1.8V, has 100000 write/erase cycles endurance, and uses SPI serial bus type. The package is rectangular in shape with a thin profile and terminal finish of tin silver copper.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

3

Not Qualified

1.2 mm

SPI

.00001 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32FVTCIG by Winbond Electronics

W25Q32FVTCIG

Winbond Electronics

W25Q32FVTCIG by Winbond Electronics is a NOR flash memory with 32Mx1 organization, operating at 104MHz clock frequency. It features hardware/software write protection and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory with SPI serial bus interface.

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

2.7

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25L1606EXCI-12G by Macronix

MX25L1606EXCI-12G

Macronix

MX25L1606EXCI-12G by Macronix is a 16Mb NOR flash memory with SPI interface. It operates at 3V, supports up to 86MHz clock frequency, and has 100K write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory in a compact package.

1

86 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

16777216 bit

FLASH

8

1

24

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A13G1240E by Micron Technology

N25Q512A13G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q00AA13G1240E by Micron Technology

N25Q00AA13G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: LBGA; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

LBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1.3 mm

SPI

.0002 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A11G1240E by Micron Technology

N25Q512A11G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

108 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

N25Q064A13E1241E by Micron Technology

N25Q064A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

108 MHz

R-PBGA-B24

e1

8 mm

67108864 bit

FLASH

1

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

2.7

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A13E1240E by Micron Technology

N25Q256A13E1240E

Micron Technology

N25Q256A13E1240E by Micron Technology is a NOR type Flash Memory with 256Mx1 organization, operating at 108MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring high-speed synchronous operation.

108 MHz

20

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

Not Qualified

1.2 mm

SPI

.00025 Amp

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A83G1240E by Micron Technology

N25Q512A83G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A83E1240E by Micron Technology

N25Q256A83E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q128A13E1240E by Micron Technology

N25Q128A13E1240E

Micron Technology

Micron Technology's N25Q128A13E1240E is a 128M NOR flash memory with 108 MHz clock frequency, SPI serial bus type. Operating at 3V, it offers 100000 write/erase cycles and -40 to 85°C temperature range. Ideal for industrial applications requiring high-speed data storage in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13E1241E by Micron Technology

N25Q128A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A11E1240E by Micron Technology

N25Q256A11E1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

SPI-COMPATIBLE SERIAL BUS INTERFACE

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.8

Not Qualified

1.2 mm

SPI

.00002 Amp

Flash Memories

20 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A83G12A0F by Micron Technology

N25Q512A83G12A0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G12H0F by Micron Technology

N25Q512A83G12H0F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q032A13E1240E by Micron Technology

N25Q032A13E1240E

Micron Technology

Micron Technology's N25Q032A13E1240E is a NOR type Flash Memory with 32Mx1 organization, operating at 108MHz. It has a max supply voltage of 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX66L51235FXDI-10G by Macronix

MX66L51235FXDI-10G

Macronix

Macronix's MX66L51235FXDI-10G is a 128MX4 NOR flash memory with 536870912 bit density. Operating at 104 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring reliable, high-speed data storage in a compact GRID ARRAY package.

ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT

2

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00004 Amp

Flash Memories

40 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q512A13G1241E by Micron Technology

N25Q512A13G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 512MX1;

108 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q128A13E1440E by Micron Technology

N25Q128A13E1440E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

108 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

SST26VF032B-104I/TD by Microchip Technology

SST26VF032B-104I/TD

Microchip Technology

SST26VF032B-104I/TD by Microchip: 3V supply, 104MHz clock freq, SPI serial bus. Ideal for industrial applications requiring EEPROM memory with 100K write/erase cycles and -40 to 85°C operating range. Compact package with 24 terminals, suitable for thin profile designs.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

EEPROM

8

3

1

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

AEC-Q100

1.2 mm

SPI

.000045 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q00AA11G1240E by Micron Technology

N25Q00AA11G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

108 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

260

1.8

1.3 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

N25Q256A13E1241E by Micron Technology

N25Q256A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241E by Micron Technology

N25Q256A83E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241F by Micron Technology

N25Q256A83E1241F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 256MX1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G1241E by Micron Technology

N25Q512A83G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

MX66L1G45GXDI-10G by Macronix

MX66L1G45GXDI-10G

Macronix

Macronix's MX66L1G45GXDI-10G is a 256MX4 Flash Memory with 1073741824-bit memory density. It operates at 104 MHz clock frequency, suitable for industrial applications. The package style is grid array, thin profile, with a terminal pitch of 1mm and bottom terminal position.

ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT

2

104 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

4

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

6 mm

MT25QL02GCBA8E12-0SIT by Micron Technology

MT25QL02GCBA8E12-0SIT

Micron Technology

MT25QL02GCBA8E12-0SIT by Micron: NOR Flash Memory, 512Mx4 organization, 133MHz clock frequency. Ideal for industrial applications requiring high endurance and serial SPI interface.

MEMORY WIDTH CAN ALSO ORGANISED AS X1

2

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

4

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

60 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25U51245GXDI54 by Macronix

MX25U51245GXDI54

Macronix

Macronix MX25U51245GXDI54 is a 64MX8 NOR Flash Memory with 166 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 1.65-2V supply voltage range and 536MB memory density. Ideal for industrial applications requiring high-speed data storage in compact devices.

IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1

4

166 MHz

20

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

LBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

1.8

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

IS25WP01G-RILE by Integrated Silicon Solution

IS25WP01G-RILE

Integrated Silicon Solution

IS25WP01G-RILE by Integrated Silicon Solution is a 128MX8 flash memory with 1.8V programming voltage and operates at up to 104MHz clock frequency. It is ideal for industrial applications requiring high memory density, low profile grid array package, and synchronous operation.

1

104 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

1.8

1.4 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

MX25L51245GXDJ-10G by Macronix

MX25L51245GXDJ-10G

Macronix

MX25L51245GXDJ-10G by Macronix is a 128MX4 flash memory with a memory density of 536870912 bits. It operates at a max clock frequency of 104 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

ALSO CONFIGURED WITH 1-BIT WIDTH

2

104 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT25QU256ABA8E12-0AUTTR by Micron Technology

MT25QU256ABA8E12-0AUTTR

Micron Technology

MT25QU256ABA8E12-0AUTTR by Micron Technology is a 32MX8 NOR flash memory with 166 MHz clock frequency, suitable for SPI serial applications. Operating at 1.8V, it offers 100000 Write/Erase cycles and has a compact size of 6mm x 8mm, making it ideal for automotive electronics and IoT devices.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT35XL01GBBA1G12-0AATTR by Micron Technology

MT35XL01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm; Serial Bus Type: SPI;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA1G12-0SITTR by Micron Technology

MT35XL01GBBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0AATTR by Micron Technology

MT35XL01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE; Maximum Seated Height: 1.2 mm;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL01GBBA2G12-0SITTR by Micron Technology

MT35XL01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Endurance: 100000 Write/Erase Cycles; Maximum Operating Temperature: 85 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA1G12-0SITTR by Micron Technology

MT35XL02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL02GCBA2G12-0SITTR by Micron Technology

MT35XL02GCBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; Write Protection: HARDWARE;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA1G12-0AATTR by Micron Technology

MT35XL256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Terminal Finish: TIN SILVER COPPER;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL256ABA2G12-0AATTR by Micron Technology

MT35XL256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8; Maximum Time At Peak Reflow Temperature (s): 30;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0AATTR by Micron Technology

MT35XL512ABA1G12-0AATTR

Micron Technology

MT35XL512ABA1G12-0AATTR by Micron Technology is a 64MX8 NOR type flash memory with a density of 536870912 bits. It operates at a voltage range of 2.7V to 3.6V and has a max clock frequency of 133 MHz. This flash memory is commonly used in automotive applications due to its AEC-Q100 screening level and high endurance of 100000 write/erase cycles.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA1G12-0SITTR by Micron Technology

MT35XL512ABA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Minimum Operating Temperature: -40 Cel;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0AATTR by Micron Technology

MT35XL512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words; Surface Mount: YES;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XL512ABA2G12-0SITTR by Micron Technology

MT35XL512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Operating Mode: SYNCHRONOUS;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE