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24 Flash Memory 226

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT35XU01GBBA1G12-0AATTR by Micron Technology

MT35XU01GBBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0AUTTR by Micron Technology

MT35XU01GBBA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA1G12-0SITTR by Micron Technology

MT35XU01GBBA1G12-0SITTR

Micron Technology

MT35XU01GBBA1G12-0SITTR by Micron Technology is a 128MX8 NOR flash memory with 1.8V supply voltage, operating at up to 200MHz clock frequency. It features hardware write protection and offers 100000 write/erase cycles. Ideal for SPI serial applications requiring high endurance and fast data access in a compact GRID ARRAY package.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AATTR by Micron Technology

MT35XU01GBBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Technology: CMOS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0AUTTR by Micron Technology

MT35XU01GBBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Width: 6 mm; Package Equivalence Code: BGA24,5X5,40;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU01GBBA2G12-0SITTR by Micron Technology

MT35XU01GBBA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; No. of Words Code: 128M;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AATTR by Micron Technology

MT35XU02GCBA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24; Terminal Pitch: 1 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0AUTTR by Micron Technology

MT35XU02GCBA1G12-0AUTTR

Micron Technology

Micron Technology's MT35XU02GCBA1G12-0AUTTR is a 256MX8 NOR flash memory with 200 MHz clock frequency, 1.8V programming voltage, and 100K write/erase cycles. It operates in serial mode via SPI bus, suitable for automotive applications due to AEC-Q100 screening and -40 to 125°C temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA1G12-0SITTR by Micron Technology

MT35XU02GCBA1G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Maximum Operating Temperature: 85 Cel;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AATTR by Micron Technology

MT35XU02GCBA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words; Maximum Clock Frequency (fCLK): 200 MHz;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0AUTTR by Micron Technology

MT35XU02GCBA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20; Operating Mode: SYNCHRONOUS;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU02GCBA2G12-0SITTR by Micron Technology

MT35XU02GCBA2G12-0SITTR

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0SITTR is a 256MX8 NOR type flash memory with a memory density of 2Gb. It operates at a max clock frequency of 200MHz and has a min data retention time of 20 years. This flash memory is commonly used in applications that require high-speed, non-volatile storage such as automotive, industrial, and consumer electronics.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AATTR by Micron Technology

MT35XU256ABA1G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Surface Mount: YES; Minimum Supply Voltage (Vsup): 1.7 V;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA1G12-0AUTTR by Micron Technology

MT35XU256ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2 V; Package Body Material: PLASTIC/EPOXY;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AATTR by Micron Technology

MT35XU256ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Endurance: 100000 Write/Erase Cycles;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU256ABA2G12-0AUTTR by Micron Technology

MT35XU256ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL; Screening Level: AEC-Q100;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AATTR by Micron Technology

MT35XU512ABA1G12-0AATTR

Micron Technology

Micron Technology's MT35XU512ABA1G12-0AATTR is a 64MX8 NOR flash memory with 67108864 words. Operating at 200 MHz, it has a supply voltage range of 1.7V to 2V and endurance of 100000 cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40°C to 105°C operating temperature range.

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA1G12-0AUTTR by Micron Technology

MT35XU512ABA1G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS; Terminal Form: BALL;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0AATTR by Micron Technology

MT35XU512ABA2G12-0AATTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Width: 6 mm;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0AUTTR by Micron Technology

MT35XU512ABA2G12-0AUTTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; Surface Mount: YES;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MT35XU512ABA2G12-0SITTR by Micron Technology

MT35XU512ABA2G12-0SITTR

Micron Technology

FLASH; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Package Equivalence Code: BGA24,5X5,40;

200 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

2 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE

MX25L6433FXCI-08G by Macronix

MX25L6433FXCI-08G

Macronix

Macronix MX25L6433FXCI-08G is a 64Mb NOR Flash Memory with SPI interface, operating at 133MHz. It offers 100K Write/Erase cycles, -40 to 85°C temp range, and hardware/software write protection. Ideal for industrial applications requiring high endurance and reliable data storage in compact form factor.

ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT

2

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

67108864 bit

FLASH

4

3

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX4

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

SPI

.00002 Amp

17 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q64JVTCIQ by Winbond Electronics

W25Q64JVTCIQ

Winbond Electronics

Winbond Electronics' W25Q64JVTCIQ is a 3.3V NOR Flash Memory with 8MX8 organization, operating at up to 133MHz clock frequency. Ideal for industrial applications, it offers 100000 Write/Erase cycles, SPI serial bus type, and a memory density of 67108864 bits.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

1.2 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25N01GVTBIG by Winbond Electronics

W25N01GVTBIG

Winbond Electronics

Winbond Electronics' W25N01GVTBIG is a 1GX1 SLC NAND Flash Memory with 3V supply, 104 MHz clock frequency, and SPI serial bus. Ideal for industrial applications, it offers 100K write/erase cycles, -40 to 85°C operating range, and compact GRID ARRAY package.

104 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

W25N01GVTBIT by Winbond Electronics

W25N01GVTBIT

Winbond Electronics

W25N01GVTBIT by Winbond Electronics is a 1GX1 SLC NAND flash memory with 1073741824-bit density. It operates at 3V, supports SPI serial bus, and has a clock frequency of up to 104 MHz. Ideal for industrial applications requiring high endurance with 100000 write/erase cycles.

104 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

W25N01GVTCIG by Winbond Electronics

W25N01GVTCIG

Winbond Electronics

W25N01GVTCIG by Winbond Electronics is a 1G SLC NAND Flash Memory with SPI Serial Bus, offering 100000 Write/Erase Cycles. Operating at 3V, it supports a max Clock Frequency of 104 MHz and has a temperature range of -40 to 85 °C. Ideal for industrial applications requiring high endurance and reliable data storage.

104 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

W25N01GVTCIT by Winbond Electronics

W25N01GVTCIT

Winbond Electronics

W25N01GVTCIT by Winbond Electronics is a 1Gx1 SLC NAND flash memory with 3V nominal voltage, operating at up to 104MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring high endurance of 100K cycles.

104 MHz

10

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00005 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

SLC NAND TYPE

6 mm

HARDWARE/SOFTWARE

MT25QL128ABA8E12-1SIT by Micron Technology

MT25QL128ABA8E12-1SIT

Micron Technology

MT25QL128ABA8E12-1SIT by Micron Technology is a 16Mx8 NOR type flash memory with 133 MHz clock frequency. Operating at -40 to 85 °C, it offers 100000 write/erase cycles and SPI serial bus for industrial applications. With a thin profile of 1.2 mm, it has a max supply voltage of 3.6 V and supports hardware/software write protection.

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT25QL128ABA8E14-0SIT by Micron Technology

MT25QL128ABA8E14-0SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

SPI

.00005 Amp

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

IS26KL256S-DABLI00 by Integrated Silicon Solution

IS26KL256S-DABLI00

Integrated Silicon Solution

IS26KL256S-DABLI00 by Integrated Silicon Solution is a 32MX8 Flash Memory with 268Mbit memory density. Operating at 3V, it offers synchronous mode and parallel interface. Ideal for industrial applications requiring fast access time of 96ns in a compact GRID ARRAY package.

96 ns

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

VBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

PARALLEL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS25WP064A-RHLE by Integrated Silicon Solution

IS25WP064A-RHLE

Integrated Silicon Solution

IS25WP064A-RHLE by Integrated Silicon Solution is an 8MX8 NOR Flash Memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase cycles and SPI serial bus type for industrial applications.

1

133 MHz

20

100000 Write/Erase Cycles

S-PBGA-B24

e1

5 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

SQUARE

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

1.2 mm

SPI

.000035 Amp

29 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

NOR TYPE

5 mm

HARDWARE/SOFTWARE

MT25QL512ABB8E12-1SIT by Micron Technology

MT25QL512ABB8E12-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B24;

133 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

MT25QL256ABA8E12-1SAT by Micron Technology

MT25QL256ABA8E12-1SAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

133 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MT25QL256ABA8E14-1SIT by Micron Technology

MT25QL256ABA8E14-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

133 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25L12845GXCI-08G by Macronix

MX25L12845GXCI-08G

Macronix

Macronix's MX25L12845GXCI-08G is a 128Mb Flash Memory with 32MX4 organization, operating at up to 120MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with compact form factor.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

4

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25L12845GXDI-08G by Macronix

MX25L12845GXDI-08G

Macronix

Macronix MX25L12845GXDI-08G is a 128Mb Flash Memory with synchronous operation, 120MHz clock frequency, and 32Mx4 organization. It is used in industrial applications for data storage due to its high memory density and serial interface.

CAN BE ORGANISED AS 128 M X 1

2

120 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

4

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25U12835FXDI-10G by Macronix

MX25U12835FXDI-10G

Macronix

Macronix's MX25U12835FXDI-10G is a 128Mb flash memory with synchronous operation, 104MHz clock frequency, and 1.8V programming voltage. Ideal for industrial applications requiring high-speed data storage in a compact grid array package.

IT CAN ALSO BE CONFIGURABLE AS 128MX1

2

104 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

4

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25U51245GXDI0A by Macronix

MX25U51245GXDI0A

Macronix

Macronix MX25U51245GXDI0A is a 64MX8 NOR flash memory with 166 MHz clock frequency, SPI serial bus type. It operates at 1.8V, has 100K write/erase cycles endurance, and is ideal for industrial applications requiring high-speed data storage.

166 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

SPI

.00005 Amp

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX66L1G45GXDI-08G by Macronix

MX66L1G45GXDI-08G

Macronix

Macronix's MX66L1G45GXDI-08G is a 256MX4 flash memory IC with 1073741824-bit density. It operates at up to 166 MHz clock frequency, suitable for industrial applications. With a thin profile and grid array package style, it offers synchronous operation and serial interface for efficient data storage solutions.

ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT

2

166 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

4

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

W25Q256JVBIQ by Winbond Electronics

W25Q256JVBIQ

Winbond Electronics

W25Q256JVBIQ by Winbond Electronics is a 32MX8 NOR type flash memory with 268MB density. It operates at 133MHz clock frequency, has 100K write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring high-speed data storage in compact devices.

ALSO OPERATES AT 104MHZ AT 2.7-3.0V

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

1.2 mm

SPI

.00002 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32JVTBIQ by Winbond Electronics

W25Q32JVTBIQ

Winbond Electronics

Winbond Electronics' W25Q32JVTBIQ is a 32Mb flash memory with synchronous operation at 133MHz clock frequency. It features a 3V nominal voltage and industrial temperature grade, suitable for applications requiring high-speed data storage in compact devices. The package style is grid array with thin profile, making it ideal for space-constrained designs.

2.7V NOMINAL AVAILABLE WITH 104MHZ

1

133 MHz

R-PBGA-B24

e1

8 mm

33554432 bit

FLASH

8

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

6 mm

W25Q64JVTBIQ by Winbond Electronics

W25Q64JVTBIQ

Winbond Electronics

Winbond Electronics' W25Q64JVTBIQ is a 3.3V NOR flash memory with 8Mx8 organization, SPI serial bus type, and 133MHz clock frequency. Ideal for industrial applications requiring high endurance, it offers 100K write/erase cycles and operates in a temperature range of -40 to 85°C.

IT ALSO OPERATES AT 2.7V @ 104MHZ

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

1.2 mm

SPI

.00005 Amp

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q32JVTCIM by Winbond Electronics

W25Q32JVTCIM

Winbond Electronics

Winbond Electronics' W25Q32JVTCIM is a 32Mb Flash Memory with 133MHz clock frequency, operating at 3V. It has a compact rectangular package and is suitable for industrial applications requiring high-speed synchronous operation. With 4Mx8 organization, it offers reliable performance in a wide temperature range from -40 to 85°C.

133 MHz

R-PBGA-B24

8 mm

33554432 bit

FLASH

8

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS25WP512M-RHLA3 by Integrated Silicon Solution

IS25WP512M-RHLA3

Integrated Silicon Solution

IS25WP512M-RHLA3 by Integrated Silicon Solution is a 64MX8 NOR type flash memory with a density of 536870912 bit. It operates at a max clock frequency of 133 MHz and has an endurance of 100000 Write/Erase Cycles. This memory IC is commonly used in automotive applications due to its AEC-Q100 screening level and temperature grade.

1

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

SPI

.00026 Amp

35 mA

1.95 V

1.65 V

1.8

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

10

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT25QU128ABA8E12-1SIT by Micron Technology

MT25QU128ABA8E12-1SIT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

166 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

1

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX66L2G45GXRI00 by Macronix

MX66L2G45GXRI00

Macronix

Macronix's MX66L2G45GXRI00 is a 256MX8 NOR flash memory with 133 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact devices.

IT CAN ALSO CONFIGURED AS 1G X 2 AND 2G X 1

4

133 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

LBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

NOT SPECIFIED

3

1.3 mm

SPI

.0006 Amp

130 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MX25UM51245GXDIH0 by Macronix

MX25UM51245GXDIH0

Macronix

Macronix's MX25UM51245GXDIH0 is a 64MX8 Flash Memory with 536Mbit density. It operates at 250MHz clock frequency, suitable for industrial applications. With synchronous mode and serial interface, it offers fast data transfer in a compact GRID ARRAY package.

1

250 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MX25UM51345GXDI00 by Macronix

MX25UM51345GXDI00

Macronix

Macronix's MX25UM51345GXDI00 is a 64MX8 Flash Memory with 67108864 words. Operating at 200 MHz, it has a voltage range of 1.65V to 2V and temperature grade of INDUSTRIAL. Ideal for applications requiring high-speed data storage in industrial environments.

1

200 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm