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MT25QL128ABA8E12-1SIT

Micron Technology

MT25QL128ABA8E12-1SIT by Micron Technology

MT25QL128ABA8E12-1SIT by Micron Technology is a 16Mx8 NOR type flash memory with 133 MHz clock frequency. Operating at -40 to 85 °C, it offers 100000 write/erase cycles and SPI serial bus for industrial applications. With a thin profile of 1.2 mm, it has a max supply voltage of 3.6 V and supports hardware/software write protection.

Median Price

$3.025

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.025

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$3.025

-

-

-

Chip Stock

USA . 11,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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11,200

-

-

-

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Vyrian

USA . 8,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

8,729

-

-

-

-

Digiode

USA . 410 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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410

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,944 parts In-Stock

1+ parts

$2.550

100+ parts

-

1k+ parts

-

10k+ parts

-

3,944

$2.550

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-

-

Corohmni

South Africa . 493 parts In-Stock

1+ parts

$3.025

100+ parts

-

1k+ parts

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493

$3.025

-

-

-

Continental Prestige Electronics

USA . 6,633 parts In-Stock

1+ parts

$3.025

100+ parts

-

1k+ parts

-

10k+ parts

$2.965

6,633

$3.025

-

-

$2.965

Argo Parts USA

USA . 2,823 parts In-Stock

1+ parts

$3.025

100+ parts

-

1k+ parts

-

10k+ parts

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2,823

$3.025

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-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$3.025

100+ parts

-

1k+ parts

$2.874

10k+ parts

$2.813

100

$3.025

-

$2.874

$2.813

Ampacity Inc.

Singapore . 323 parts In-Stock

1+ parts

$8.000

100+ parts

-

1k+ parts

-

10k+ parts

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323

$8.000

-

-

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AZTECH Wire

Italy . 263 parts In-Stock

1+ parts

$18.723

100+ parts

-

1k+ parts

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10k+ parts

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263

$18.723

-

-

-

Semicontronic

India . 624 parts In-Stock

1+ parts

$26.000

100+ parts

$25.350

1k+ parts

$25.220

10k+ parts

-

624

$26.000

$25.350

$25.220

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Futuretech Components

Singapore . 4,980 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,980

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-

-

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RC Electronics

USA . 4,700 parts In-Stock

1+ parts

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4,700

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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4,000

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Perfect Parts

USA . 2,580 parts In-Stock

1+ parts

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100+ parts

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2,580

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-

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Kepictronics

USA . 1,500 parts In-Stock

1+ parts

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100+ parts

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1,500

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Corphita

USA . 361 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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361

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-

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Microchip USA

USA . 178 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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178

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Overview

Unlock the power of reliable data storage with the MT25QL128ABA8E12-1SIT by Micron Technology. This high-quality flash memory offers unparalleled durability and performance, making it perfect for industrial applications. With a robust design and advanced technology, this product ensures your data is always secure and easily accessible. Trust Micron Technology to deliver superior products that meet your needs and exceed your expectations. Experience the difference with the MT25QL128ABA8E12-1SIT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, making it suitable for various applications.

Surface Mount: YES

Allows for easy installation and integration into electronic devices.

Maximum Operating Temperature: 85 °C

Ensures the flash memory can operate reliably in a wide range of environmental conditions.

Write Protection: HARDWARE/SOFTWARE

Provides options for securing data stored in the flash memory.

Maximum Clock Frequency (fCLK): 133 MHz

Supports high-speed data transfer and access to stored information.

Memory Density: 134217728 bit

Offers a large storage capacity for data and programs.

Technical Specifications

Flash Memory MT25QL128ABA8E12-1SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MT25QL128ABA8E12-1SIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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