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S28HS02GTFPBHV053

Infineon Technologies

S28HS02GTFPBHV053 by Infineon Technologies

S28HS02GTFPBHV053 by Infineon Technologies is a NOR type Flash Memory with 2GX1 organization and 166 MHz clock frequency. Operating at -40 to 105 °C, it has a memory density of 2147483648 bits. Suitable for applications requiring high-speed synchronous operation in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,220 parts In-Stock

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8,220

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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Digiode

USA . 578 parts In-Stock

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578

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Nova Conductors

Japan . 24 parts In-Stock

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24

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 5,403 parts In-Stock

1+ parts

$5.786

100+ parts

$5.555

1k+ parts

$5.323

10k+ parts

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5,403

$5.786

$5.555

$5.323

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AZTECH Wire

Italy . 860 parts In-Stock

1+ parts

$11.458

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860

$11.458

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Ampacity Inc.

Singapore . 239 parts In-Stock

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$18.000

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239

$18.000

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Argo Parts USA

USA . 4,227 parts In-Stock

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4,227

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Continental Prestige Electronics

USA . 3,609 parts In-Stock

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3,609

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 84 parts In-Stock

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84

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Overview

Discover the cutting-edge S28HS02GTFPBHV053 Flash Memory by Infineon Technologies, a leading manufacturer known for top-quality products. Ideal for applications requiring high-speed data transfer, this synchronous flash memory offers unparalleled performance and reliability. With a nominal supply voltage of 1.8V and a maximum operating temperature of 105°C, it is designed to meet the demands of various industries. Upgrade your systems with this advanced NOR type memory IC that boasts a memory density of 2147483648 bits and a maximum clock frequency of 166 MHz. Trust Infineon Technologies to deliver exceptional value and superior technology for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the flash memory product.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards, saving time and effort during production.

Operating Mode: SYNCHRONOUS

Enables efficient and synchronized data transfer, improving overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 1.8

Offers a low power consumption level, contributing to energy efficiency and longer battery life in electronic devices.

Maximum Operating Temperature: 105 °C

Ensures reliable operation in high temperature environments, making this flash memory suitable for various applications.

Technology: CMOS

Utilizes complementary metal-oxide-semiconductor technology, known for its low power consumption and high speed performance.

No. of Words: 2147483648 words

Provides a large storage capacity for data, suitable for storing a vast amount of information in electronic devices.

Memory IC Type: FLASH

Utilizes flash memory technology, known for its non-volatile nature and fast read/write speeds compared to traditional memory types.

Technical Specifications

Flash Memory S28HS02GTFPBHV053 attributes and parameters. Explore more Flash Memory devices from Infineon Technologies

Specs

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

S-PBGA-B24

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Programming Voltage (V):

1.8

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Position:

BOTTOM

Type:

NOR TYPE

Trade Compliance

S28HS02GTFPBHV053 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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