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UVPROM EPROM 59

EPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
M27C256B-10F1 by STMicroelectronics

M27C256B-10F1

STMicroelectronics

STMicroelectronics' M27C256B-10F1 EPROM features 32KX8 organization, 100ns access time, and 262144-bit memory density. Commonly used in commercial applications, this CMOS technology-based UVPROM operates at a nominal voltage of 5V with a programming voltage of 12.75V.

100 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-12F1 by STMicroelectronics

M27C256B-12F1

STMicroelectronics

M27C256B-12F1 EPROM by STMicroelectronics features 32KX8 organization, 3-STATE output, and operates in ASYNCHRONOUS mode. Commonly used for memory storage applications due to its 262144 bit density, with a programming voltage of 12.75V and max access time of 120ns.

120 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-12F6 by STMicroelectronics

M27C256B-12F6

STMicroelectronics

M27C256B-12F6 by STMicroelectronics is a 32KX8 EPROM with 3-STATE output, operating at 5V. It has a programming voltage of 12.75V and max access time of 120ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

120 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-15F1 by STMicroelectronics

M27C256B-15F1

STMicroelectronics

M27C256B-15F1 by STMicroelectronics is a 32KX8 EPROM with 150 ns access time, operating at 5V. It features a CMOS technology, through-hole terminal form, and 3-STATE output characteristics. Ideal for commercial applications requiring reliable non-volatile memory storage in a compact rectangular package.

150 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-70XF1 by STMicroelectronics

M27C256B-70XF1

STMicroelectronics

STMicroelectronics M27C256B-70XF1 is a 32KX8 EPROM with 70ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and parallel interface. Commonly used in commercial applications requiring non-volatile memory storage.

70 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-90F6 by STMicroelectronics

M27C256B-90F6

STMicroelectronics

M27C256B-90F6 by STMicroelectronics is a 32KX8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 90ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

90 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M87C257-12F1 by STMicroelectronics

M87C257-12F1

STMicroelectronics

M87C257-12F1 by STMicroelectronics is a 32KX8 EPROM with 262144 bit memory density. It operates at 5V, has a max access time of 120ns, and features a CMOS technology. Commonly used in commercial applications requiring reliable non-volatile memory storage.

120 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M87C257-15F6 by STMicroelectronics

M87C257-15F6

STMicroelectronics

M87C257-15F6 EPROM by STMicroelectronics features 32KX8 organization, 3-STATE output, and 150 ns access time. Ideal for industrial applications requiring a memory density of 262144 bit in a CMOS technology with parallel interface.

150 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY27C256-150WI by Cypress Semiconductor

CY27C256-150WI

Cypress Semiconductor

CY27C256-150WI by Cypress Semiconductor is a 32KX8 EPROM with 262144-bit memory density. It operates at 5V, has a max access time of 150ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

150 ns

R-GDIP-T28

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

Not Qualified

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

DUAL

M27C801-90F1 by STMicroelectronics

M27C801-90F1

STMicroelectronics

M27C801-90F1 by STMicroelectronics is a 1MX8 EPROM with 8388608 bit memory density. It operates in asynchronous mode with a max access time of 90 ns. Commonly used for parallel applications, it has a package style of IN-LINE, WINDOW and operates at temperatures b/w 0 to 70 °C.

90 ns

COMMON

R-GDIP-T32

e3

41.885 mm

8388608 bit

UVPROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-10F1 by STMicroelectronics

M27C2001-10F1

STMicroelectronics

M27C2001-10F1 by STMicroelectronics is a 256KX8 EPROM with an operating voltage of 5V. It has a max access time of 100ns and is commonly used in applications requiring non-volatile memory storage.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

10

15.24 mm

M27C2001-10F6 by STMicroelectronics

M27C2001-10F6

STMicroelectronics

The STMicroelectronics M27C2001-10F6 is a 256KX8 EPROM with 100 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and industrial temperature grade. Commonly used in applications requiring reliable non-volatile memory storage with a memory density of 2Mbit.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-12F1 by STMicroelectronics

M27C2001-12F1

STMicroelectronics

M27C2001-12F1 EPROM by STMicroelectronics features 256KX8 organization, 120 ns access time, and 5V nominal voltage. Commonly used in commercial applications for storing data with a memory density of 2097152 bit.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-12F6 by STMicroelectronics

M27C2001-12F6

STMicroelectronics

M27C2001-12F6 EPROM by STMicroelectronics features 256KX8 organization, 120 ns access time, and 5V nominal voltage. Ideal for industrial applications requiring reliable non-volatile memory with a memory density of 2097152 bits.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-15F1 by STMicroelectronics

M27C2001-15F1

STMicroelectronics

M27C2001-15F1 EPROM by STMicroelectronics features 256KX8 organization, 150 ns access time, and 5V nominal voltage. Commonly used in commercial applications for storing data with a memory density of 2097152 bit.

150 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-70XF1 by STMicroelectronics

M27C2001-70XF1

STMicroelectronics

UVPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: WDIP; Package Shape: RECTANGULAR; Organization: 256KX8;

70 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C64A-15F1 by STMicroelectronics

M27C64A-15F1

STMicroelectronics

STMicroelectronics' M27C64A-15F1 is an 8KX8 EPROM with 70°C max temp, 150 ns access time, and 5V supply. Ideal for commercial applications requiring a reliable, high-density UVPROM memory IC with 8192 words and common I/O type.

150 ns

COMMON

R-CDIP-T28

e3

36.92 mm

65536 bit

UVPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.5

Not Qualified

5.97 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C64A-20F1 by STMicroelectronics

M27C64A-20F1

STMicroelectronics

M27C64A-20F1 by STMicroelectronics is an 8KX8 EPROM with a memory density of 65536 bit. It operates at 5V, has a programming voltage of 12.5V, and offers a max access time of 200 ns. This UVPROM device is commonly used in commercial applications requiring reliable non-volatile memory storage.

200 ns

COMMON

R-CDIP-T28

e3

36.92 mm

65536 bit

UVPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.5

Not Qualified

5.97 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C64A-20F6 by STMicroelectronics

M27C64A-20F6

STMicroelectronics

M27C64A-20F6 by STMicroelectronics is an 8KX8 EPROM with 65536 bit memory density, operating at 5V. It features a max access time of 200ns and is ideal for industrial applications requiring reliable non-volatile memory storage. The device has a parallel interface with 28 terminals in an in-line package style, suitable for various embedded systems.

200 ns

COMMON

R-CDIP-T28

e3

36.92 mm

65536 bit

UVPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.5

Not Qualified

5.97 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-10F1 by STMicroelectronics

M27C4002-10F1

STMicroelectronics

M27C4002-10F1 EPROM by STMicroelectronics features 256KX16 organization, 100ns access time, and 70mA max supply current. Ideal for commercial applications requiring reliable non-volatile memory with a parallel interface.

100 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-10F6 by STMicroelectronics

M27C4002-10F6

STMicroelectronics

The STMicroelectronics M27C4002-10F6 EPROM features 256KX16 organization, 100 ns access time, and 3-STATE output characteristics. Ideal for industrial applications requiring a memory density of 4194304 bit with a parallel interface. Operating at temperatures from -40 to 85 °C, it offers reliable performance in various electronic systems.

100 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-12F1 by STMicroelectronics

M27C4002-12F1

STMicroelectronics

The STMicroelectronics M27C4002-12F1 is a 256KX16 EPROM with 120ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and through-hole terminal form. Ideal for commercial applications requiring reliable memory storage with a memory density of 4194304 bits.

120 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-15F1 by STMicroelectronics

M27C4002-15F1

STMicroelectronics

STMicroelectronics M27C4002-15F1 is a 256KX16 EPROM with 150 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and common I/O type. Ideal for commercial applications requiring reliable non-volatile memory storage in a rectangular package style.

150 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-45XF1 by STMicroelectronics

M27C4002-45XF1

STMicroelectronics

M27C4002-45XF1 EPROM by STMicroelectronics features 256KX16 organization, 45 ns access time, and 5V nominal voltage. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

45 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-80XF1 by STMicroelectronics

M27C4002-80XF1

STMicroelectronics

M27C4002-80XF1 EPROM by STMicroelectronics features 256KX16 organization, 80 ns access time, and 5V nominal voltage. Ideal for commercial applications requiring reliable non-volatile memory with a memory density of 4Mbit and parallel interface.

80 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-10F1 by STMicroelectronics

M27C512-10F1

STMicroelectronics

M27C512-10F1 EPROM by STMicroelectronics features 64KX8 organization, 100 ns access time, and 524288 bit memory density. Commonly used in applications requiring reliable non-volatile memory storage with a parallel interface.

100 ns

COMMON

R-GDIP-T28

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

NOT SPECIFIED

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M27C512-12F1 by STMicroelectronics

M27C512-12F1

STMicroelectronics

M27C512-12F1 EPROM by STMicroelectronics features 64KX8 organization, 120 ns access time, and 524288 bit memory density. Commonly used in commercial applications for storing data with a supply voltage of 5V. Operating temperature ranges from 0 to 70 °C.

120 ns

COMMON

R-GDIP-T28

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

NOT SPECIFIED

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M27C512-15F1 by STMicroelectronics

M27C512-15F1

STMicroelectronics

M27C512-15F1 by STMicroelectronics is a 64KX8 EPROM with 150 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and through-hole terminal form. Commonly used in commercial applications requiring non-volatile memory storage with a capacity of 524288 bits.

150 ns

COMMON

R-GDIP-T28

e0

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-15F6 by STMicroelectronics

M27C512-15F6

STMicroelectronics

M27C512-15F6 EPROM by STMicroelectronics features 64KX8 organization, 150 ns access time, and 524288 bit memory density. It is commonly used in industrial applications requiring reliable non-volatile memory storage with a parallel interface.

150 ns

COMMON

R-GDIP-T28

e0

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-45XF1 by STMicroelectronics

M27C512-45XF1

STMicroelectronics

M27C512-45XF1 by STMicroelectronics is a 64K x 8-bit UVPROM with a max access time of 45 ns. It operates asynchronously at a nominal voltage of 5V and features a ceramic, glass-sealed package. Ideal for applications requiring reliable data storage in commercial environments.

45 ns

COMMON

R-GDIP-T28

e0

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

NOT SPECIFIED

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M27C512-70XF1 by STMicroelectronics

M27C512-70XF1

STMicroelectronics

M27C512-70XF1 by STMicroelectronics is a 64KX8 EPROM with 70 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output characteristics, and through-hole terminal form. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

70 ns

COMMON

R-GDIP-T28

e0

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

NOT SPECIFIED

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.75 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M27C512-90F1 by STMicroelectronics

M27C512-90F1

STMicroelectronics

The STMicroelectronics M27C512-90F1 EPROM features 64KX8 organization, 90 ns access time, and 5V nominal voltage. Commonly used in commercial applications, this CMOS technology-based memory IC offers a memory density of 524288 bits and operates in parallel mode with a max standby current of 0.0001 Amp.

90 ns

COMMON

R-GDIP-T28

e0

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-90F6 by STMicroelectronics

M27C512-90F6

STMicroelectronics

STMicroelectronics M27C512-90F6 is a 64KX8 EPROM with 90 ns access time, operating at 5V. It features a 3-STATE output and is ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

90 ns

COMMON

R-GDIP-T28

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

NOT SPECIFIED

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M27C4001-10F1 by STMicroelectronics

M27C4001-10F1

STMicroelectronics

STMicroelectronics' M27C4001-10F1 EPROM features 512KX8 organization, 100 ns access time, and 524288 words. Ideal for commercial applications, it operates at a max temperature of 70°C with a supply voltage of 5V. The memory density is 4194304 bits in a CMOS technology package.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-12F1 by STMicroelectronics

M27C4001-12F1

STMicroelectronics

M27C4001-12F1 EPROM by STMicroelectronics features 512KX8 organization, 100 ns access time, and 524288 words capacity. Ideal for commercial applications requiring a memory density of 4194304 bit with a parallel interface. Operating at temperatures b/w 0 to 70 °C, it utilizes a common asynchronous mode with a supply voltage of 5V.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-12F6 by STMicroelectronics

M27C4001-12F6

STMicroelectronics

M27C4001-12F6 EPROM by STMicroelectronics features 512KX8 organization, 100 ns access time, and 524288 words. It is ideal for industrial applications requiring a memory density of 4194304 bit with a parallel interface. The device operates at temperatures ranging from -40 to 85 °C and has a max supply voltage of 5.5 V.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-15F1 by STMicroelectronics

M27C4001-15F1

STMicroelectronics

M27C4001-15F1 by STMicroelectronics is a 512KX8 EPROM with an operating voltage of 5V. It has a max access time of 100ns and is commonly used in applications requiring non-volatile memory storage.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-35XF1 by STMicroelectronics

M27C4001-35XF1

STMicroelectronics

STMicroelectronics M27C4001-35XF1 is a 512KX8 EPROM with 35 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast parallel memory access. The package is ceramic-metal sealed co-fired, in-line style with dual terminals.

35 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-45XF1 by STMicroelectronics

M27C4001-45XF1

STMicroelectronics

STMicroelectronics M27C4001-45XF1 EPROM features 512KX8 organization, 45 ns access time, and 5V nominal voltage. Ideal for commercial applications requiring reliable non-volatile memory with a memory density of 4Mbit.

45 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-80XF1 by STMicroelectronics

M27C4001-80XF1

STMicroelectronics

M27C4001-80XF1 EPROM by STMicroelectronics features 512KX8 organization, 3-STATE output, and 80 ns access time. Ideal for commercial applications requiring a memory density of 4194304 bit with parallel interface and operating voltage of 5V.

80 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C160-100F1 by STMicroelectronics

M27C160-100F1

STMicroelectronics

M27C160-100F1 by STMicroelectronics is a 1MX16 EPROM with 100ns access time, operating at 5V. It features a CMOS technology, 3-STATE output characteristics, and through-hole terminal form. Ideal for applications requiring fast memory access in commercial temperature environments.

100 ns

USER CONFIGURABLE AS 1M X 16

8

COMMON

R-CDIP-T42

e3

54.635 mm

16777216 bit

UVPROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.71 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-100F1 by STMicroelectronics

M27C801-100F1

STMicroelectronics

M27C801-100F1 by STMicroelectronics is a 1MX8 EPROM with 1048576 words, 8388608 bit memory density, and 100 ns max access time. It operates at 5V and has a temperature range of 0-70 °C. Ideal for applications requiring reliable non-volatile memory storage in commercial-grade environments.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

8388608 bit

UVPROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-100F6 by STMicroelectronics

M27C801-100F6

STMicroelectronics

STMicroelectronics' M27C801-100F6 is a 1MX8 EPROM with 100ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and industrial temperature grade. Commonly used in applications requiring reliable non-volatile memory storage with parallel interface.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

8388608 bit

UVPROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-120F1 by STMicroelectronics

M27C801-120F1

STMicroelectronics

STMicroelectronics' M27C801-120F1 is a 1MX8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 120ns and is ideal for commercial applications requiring reliable non-volatile memory storage in a CMOS technology environment.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

8388608 bit

UVPROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-80F1 by STMicroelectronics

M27C801-80F1

STMicroelectronics

STMicroelectronics' M27C801-80F1 is a 1MX8 EPROM with 80 ns access time, operating at 5V. It features a CMOS technology, 32 terminals in an IN-LINE package style. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

80 ns

COMMON

R-CDIP-T32

e3

41.885 mm

8388608 bit

UVPROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-10F1 by STMicroelectronics

M27C1001-10F1

STMicroelectronics

M27C1001-10F1 by STMicroelectronics is a 128KX8 EPROM with 100ns access time. It operates at 5V, has 32 terminals, and uses CMOS technology. Commonly used in applications requiring non-volatile memory storage with a memory density of 1048576 bits.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

1048576 bit

UVPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-12F1 by STMicroelectronics

M27C1001-12F1

STMicroelectronics

The STMicroelectronics M27C1001-12F1 is a 128KX8 EPROM with 120 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output characteristics, and through-hole terminal form. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

1048576 bit

UVPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-12F6 by STMicroelectronics

M27C1001-12F6

STMicroelectronics

M27C1001-12F6 by STMicroelectronics is a 128KX8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 120ns and memory density of 1048576 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a CMOS technology environment.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

1048576 bit

UVPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm