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SOP EEPROM 302

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XC18V01SO20I by Xilinx

XC18V01SO20I

Xilinx

XC18V01SO20I by Xilinx is a 128Kx8 EEPROM with 33MHz clock frequency, operating at -40 to 85°C. Ideal for industrial applications, it offers NOR type technology, 10000 write/erase cycles endurance, and supports parallel/serial operation.

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V256SO20C by Xilinx

XC18V256SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V256SO20I by Xilinx

XC18V256SO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Memory Density: 262144 bit;

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V512SO20C by Xilinx

XC18V512SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

12.827 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC18V512SO20I by Xilinx

XC18V512SO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: Tin/Lead (Sn85Pb15);

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

M24128-BWMN6 by STMicroelectronics

M24128-BWMN6

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24256-BWMN6T by STMicroelectronics

M24256-BWMN6T

STMicroelectronics

M24256-BWMN6T by STMicroelectronics is a 32Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at 2.5-5.5V and supports up to 100k write/erase cycles, ensuring reliability in harsh environments. Its compact SOIC package allows easy surface mounting.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M34D64-WMN6T by STMicroelectronics

M34D64-WMN6T

STMicroelectronics

M34D64-WMN6T by STMicroelectronics is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at a max clock frequency of 0.4 MHz and has an endurance of 1000000 Write/Erase Cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

M95020-MN6 by STMicroelectronics

M95020-MN6

STMicroelectronics

M95020-MN6 by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features a max clock frequency of 10MHz and SPI serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M95040-WMN6 by STMicroelectronics

M95040-WMN6

STMicroelectronics

M95040-WMN6 by STMicroelectronics is a 4096-bit EEPROM with 512x8 organization, operating at 5 MHz clock frequency. It features hardware/software write protection and SPI serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000002 Amp, it offers endurance of 1,000,000 Write/Erase cycles.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

ASYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

XC17V01SO20C by Xilinx

XC17V01SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

15 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17V01SO20I by Xilinx

XC17V01SO20I

Xilinx

Xilinx XC17V01SO20I is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 3.3V, has a clock frequency of 15 MHz, and supports synchronous mode. Ideal for industrial applications requiring configuration memory with a small outline package style.

15 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S100ASO20C by Xilinx

XC17S100ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Current: 15 mA;

COMMON

R-PDSO-G20

e0

12.8 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

20

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S100ASO20I by Xilinx

XC17S100ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;

COMMON

R-PDSO-G20

e0

12.8 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

20

781216 words

781216

SYNCHRONOUS

85 Cel

-40 Cel

781216X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S150ASO20C by Xilinx

XC17S150ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

COMMON

R-PDSO-G20

e0

12.8 mm

1040096 bit

CONFIGURATION MEMORY

1

3

1

20

1040096 words

1040096

SYNCHRONOUS

70 Cel

0 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S150ASO20I by Xilinx

XC17S150ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words Code: 1040096;

COMMON

R-PDSO-G20

e0

12.8 mm

1040096 bit

CONFIGURATION MEMORY

1

3

1

20

1040096 words

1040096

SYNCHRONOUS

85 Cel

-40 Cel

1040096X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S15ASO20C by Xilinx

XC17S15ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Organization: 197696X1;

COMMON

R-PDSO-G20

e0

12.8 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

20

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S30ASO20C by Xilinx

XC17S30ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

COMMON

R-PDSO-G20

e0

12.8 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

20

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S30ASO20I by Xilinx

XC17S30ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

COMMON

R-PDSO-G20

e0

12.8 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

20

336768 words

336768

SYNCHRONOUS

85 Cel

-40 Cel

336768X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S50ASO20C by Xilinx

XC17S50ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G20;

COMMON

R-PDSO-G20

e0

12.8 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

20

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S50ASO20I by Xilinx

XC17S50ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP20,.4;

COMMON

R-PDSO-G20

e0

12.8 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

20

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

M24256-BWMW6T by STMicroelectronics

M24256-BWMW6T

STMicroelectronics

M24256-BWMW6T by STMicroelectronics is a 32KX8 EEPROM with synchronous operation and I2C control byte. It has 262144 bit memory density, 100000 write/erase cycles endurance, and operates at -40 to 85 °C. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

100000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

5.3 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.03 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

5.25 mm

5 ms

HARDWARE

24VL014/SN by Microchip Technology

24VL014/SN

Microchip Technology

24VL014/SN by Microchip Tech is an EEPROM with 128x8 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. It has a max clock frequency of 0.4 MHz and is ideal for applications requiring low power consumption and small footprint in automotive electronics.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-20 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95M01-RMW6G by STMicroelectronics

M95M01-RMW6G

STMicroelectronics

M95M01-RMW6G by STMicroelectronics is an EEPROM with 128KX8 organization, SPI serial bus type, and 1.27 mm terminal pitch. It operates at a max clock frequency of 5 MHz and has a memory density of 1048576 bit. Ideal for industrial applications requiring reliable non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

SPI

.000003 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

M95M01-RMW6TG by STMicroelectronics

M95M01-RMW6TG

STMicroelectronics

M95M01-RMW6TG by STMicroelectronics is an EEPROM with 128KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 5 MHz and has a memory density of 1048576 bit. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

SPI

.000003 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

DS28E04S-100 by Maxim Integrated

DS28E04S-100

Maxim Integrated

DS28E04S-100 by Maxim Integrated is a 4Kx1 EEPROM with 50000 cycles endurance. Operating at 3V, it supports parallel/serial modes and uses a 1-Wire serial bus. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

50000 Write/Erase Cycles

R-PDSO-G16

e0

9.9 mm

4096 bit

EEPROM

1

1

16

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX1

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

3/5

Not Qualified

1.75 mm

1-WIRE

EEPROMs

5.25 V

2.8 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

24LC04B-I/SNG by Microchip Technology

24LC04B-I/SNG

Microchip Technology

24LC04B-I/SNG by Microchip Technology is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte, hardware write protection, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

3

1

1

5

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC04BT-E/SNG by Microchip Technology

24LC04BT-E/SNG

Microchip Technology

24LC04BT-E/SNG by Microchip Technology is a 512x8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and endurance of 200s. Ideal for automotive applications due to its TS16949 screening level and -40 to 125°C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

3

1

1

5

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24AA128-I/SNG by Microchip Technology

24AA128-I/SNG

Microchip Technology

24AA128-I/SNG by Microchip Technology is an EEPROM with 16KX8 organization, I2C control byte of 1010DDDR, and max clock frequency of 0.4 MHz. It is used in industrial applications for storing data securely with features like hardware write protection and endurance of 1000000 Write/Erase Cycles.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24AA64T-I/SNG by Microchip Technology

24AA64T-I/SNG

Microchip Technology

24AA64T-I/SNG by Microchip Technology is an 8KX8 EEPROM with I2C control byte. Operating at 2.5V, it offers 1000000 write/erase cycles and has a memory density of 65536 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

3

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC128-I/SNG by Microchip Technology

24LC128-I/SNG

Microchip Technology

24LC128-I/SNG by Microchip Technology is an EEPROM with 16Kx8 organization, operating at 4.5V and 0.4MHz clock frequency. It offers hardware write protection, industrial temperature grade, and 1000000 write/erase cycles. Ideal for applications requiring reliable non-volatile memory storage in compact designs with I2C serial bus interface.

1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

131072 bit

EEPROM

8

3

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC128T-I/SMG by Microchip Technology

24LC128T-I/SMG

Microchip Technology

24LC128T-I/SMG by Microchip Technology is a 16KX8 EEPROM with I2C control byte. Operating at 4.5V, it offers 1000000 write/erase cycles and -40 to 85°C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

TS 16949

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC256T-I/SNG by Microchip Technology

24LC256T-I/SNG

Microchip Technology

24LC256T-I/SNG by Microchip Tech is a 32Kx8 EEPROM with I2C control byte. Operating at 3/5V, it offers 1000000 write/erase cycles and -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

NO

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

24LC32AT-I/SNG by Microchip Technology

24LC32AT-I/SNG

Microchip Technology

24LC32AT-I/SNG by Microchip Technology is a small outline EEPROM with 4Kx8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

32768 bit

EEPROM

8

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24LC512T-I/SMG by Microchip Technology

24LC512T-I/SMG

Microchip Technology

24LC512T-I/SMG by Microchip Technology is an EEPROM with 64KX8 organization, 524288 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in SERIAL mode via I2C bus, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000001 Amp, it offers secure hardware write protection and a wide operating temperature range from -40 to 85 °C.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.23 mm

5 ms

HARDWARE

M24256-BWMN6TP/A by STMicroelectronics

M24256-BWMN6TP/A

STMicroelectronics

STMicroelectronics M24256-BWMN6TP/A is a 32KX8 EEPROM with I2C control byte. It operates at 3/5V, has 8 terminals, and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

1

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/5

5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE

M24LR64-RMN6T/2 by STMicroelectronics

M24LR64-RMN6T/2

STMicroelectronics

M24LR64-RMN6T/2 by STMicroelectronics is a 64Kb EEPROM with I2C interface, ideal for industrial applications. It operates at 1.8-5.5V, supports up to 1M write/erase cycles, and features a compact SO package (4.9x3.9mm). Its -40 °C to 85°C temp range ensures reliability in harsh environments.

8

.4 MHz

40

1000000 Write/Erase Cycles

1010CDDR

R-PDSO-G8

e4

4.9 mm

65536 bit

EEPROM

32

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX32

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.00003 Amp

EEPROMs

.7 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

SOFTWARE

M24M01-RMW6G by STMicroelectronics

M24M01-RMW6G

STMicroelectronics

M24M01-RMW6G by STMicroelectronics is an EEPROM with 256KX8 organization, operating at 2.5V, and featuring a max clock frequency of 0.4 MHz. It is used in industrial applications for storing data with 1000000 write/erase cycles endurance and I2C serial bus interface.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e3

2097152 bit

EEPROM

8

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5 ms

HARDWARE

M24M01-RMW6TG by STMicroelectronics

M24M01-RMW6TG

STMicroelectronics

M24M01-RMW6TG by STMicroelectronics is a 256Kx8 EEPROM with a supply voltage range of 1.8V to 5.5V, ideal for industrial applications. It features synchronous operation and hardware write protection, ensuring data integrity. With an endurance of 1M write/erase cycles, it's perfect for reliable data storage in various devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e3

2097152 bit

EEPROM

8

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

2.5 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5 ms

HARDWARE

93LC76B-I/SN by Microchip Technology

93LC76B-I/SN

Microchip Technology

93LC76B-I/SN by Microchip Tech is a 512x16 EEPROM with 2MHz clock freq. Ideal for industrial applications, it offers 1000000 write/erase cycles, operates at -40 to 85°C, and supports MICROWIRE serial bus. With software write protection and totem pole output, this CMOS device has a small outline package measuring 4.9mm x 3.9mm x 1.75mm.

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8192 bit

EEPROM

16

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

YES

3.9 mm

5 ms

SOFTWARE

25AA256-E/SM by Microchip Technology

25AA256-E/SM

Microchip Technology

25AA256-E/SM by Microchip Technology is a SPI EEPROM with 32KX8 organization, operating at 2.5V, and offering 262144 bits of memory density. It is ideal for automotive applications due to AEC-Q100 screening level, -40 to 125 °C temperature range, and high endurance of 1M Write/Erase cycles.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.28 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

1.8

Not Qualified

NO

AEC-Q100

2.03 mm

SPI

.000001 Amp

EEPROMs

6 mA

5.5 V

1.8 V

2.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE/SOFTWARE

25AA320A-I/MS by Microchip Technology

25AA320A-I/MS

Microchip Technology

25AA320A-I/MS by Microchip Technology is a SPI EEPROM with 4Kx8 organization, operating at up to 10MHz. It has a wide temperature range from -40°C to 85°C and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

OPERATES WITH 1.8V MIN @ 3 MHZ

10 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

32768 bit

EEPROM

8

1

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

5

Not Qualified

AEC-Q100

1.1 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

24LC16B-M/SN by Microchip Technology

24LC16B-M/SN

Microchip Technology

24LC16B-M/SN by Microchip Technology is a 2Kx8 EEPROM with I2C control byte 1010MMMR. It operates at 5V, has 16384-bit memory density, and supports synchronous mode. Ideal for applications requiring high endurance, such as military-grade systems or hardware write protection.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.9 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-55 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24LC16BT-M/SN by Microchip Technology

24LC16BT-M/SN

Microchip Technology

24LC16BT-M/SN by Microchip Technology is a 2Kx8 EEPROM with I2C control byte. Operating at 5V, it offers 1000000 write/erase cycles and -55 to 125 °C temp range. Ideal for military-grade applications requiring small outline package and synchronous operation up to 0.4 MHz clock frequency.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.9 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-55 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95320-MN3/B by STMicroelectronics

M95320-MN3/B

STMicroelectronics

EEPROM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

125 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.000005 Amp

EEPROMs

4 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M34D64-WMN6P by STMicroelectronics

M34D64-WMN6P

STMicroelectronics

M34D64-WMN6P by STMicroelectronics is a 64Kb EEPROM with a synchronous operating mode and I2C interface. It features a wide voltage range (2.5-5.5V), operates in -40 °C to 85°C, and supports 1M write/erase cycles, making it ideal for industrial applications. Its compact SO8 package ensures efficient space utilization in electronic designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE

M34D64-WMN6TP by STMicroelectronics

M34D64-WMN6TP

STMicroelectronics

M34D64-WMN6TP by STMicroelectronics is a 64Kb EEPROM with a synchronous operating mode and I2C interface. It features an industrial temperature range (-40 °C to 85°C), 1M write/erase cycles, and operates at supply voltages from 2.5V to 5.5V, ideal for reliable data storage in various applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

1 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M34F04-WMN6P by STMicroelectronics

M34F04-WMN6P

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Memory Density: 4096 bit;

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7/5

Not Qualified

1.75 mm

I2C

.0000005 Amp

EEPROMs

1 mA

5.5 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE