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25AA256-E/SM

Microchip Technology

25AA256-E/SM by Microchip Technology

25AA256-E/SM by Microchip Technology is a SPI EEPROM with 32KX8 organization, operating at 2.5V, and offering 262144 bits of memory density. It is ideal for automotive applications due to AEC-Q100 screening level, -40 to 125 °C temperature range, and high endurance of 1M Write/Erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 12,576 parts In-Stock

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Vyrian

USA . 8,047 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

1+ parts

$2.638

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326

$2.638

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Ampacity Inc.

Singapore . 358 parts In-Stock

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$6.000

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358

$6.000

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AZTECH Wire

Italy . 201 parts In-Stock

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$10.090

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201

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QUARKTWIN TECHNOLOGY LTD

USA . 22,067 parts In-Stock

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RGB Technical Solutions

Ukraine . 5,188 parts In-Stock

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Argo Parts USA

USA . 3,858 parts In-Stock

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Continental Prestige Electronics

USA . 3,424 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Overview

Elevate your electronic projects with the 25AA256-E/SM EEPROM by Microchip Technology. This high-quality memory IC offers 32768 words of memory width and endurance of up to 1,000,000 write/erase cycles, providing reliability and longevity for your applications. With a wide operating temperature range and AEC-Q100 screening level, this EEPROM is perfect for automotive use. The compact package style and low power consumption make it ideal for space-constrained and energy-efficient designs. Trust Microchip Technology to deliver top-notch performance and innovation in every product. Unlock the potential of your projects with the 25AA256-E/SM EEPROM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring long-term reliability.

Surface Mount: YES

Easy to integrate onto PCBs, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfer, improving overall performance.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal supply voltage for stable operation and power efficiency.

Write Protection: HARDWARE/SOFTWARE

Flexible write protection options for data security and integrity.

Memory Density: 262144 bit

High memory density for storing large amounts of data in a compact form.

Endurance: 1000000 Write/Erase Cycles

Long-lasting write/erase cycles for reliable data storage and retrieval.

Serial Bus Type: SPI

SPI interface for easy communication with other devices in the system.

Maximum Clock Frequency (fCLK): 10 MHz

Supports high-speed data transfer for quick access to stored information.

Technical Specifications

EEPROM 25AA256-E/SM attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.28 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

2.03 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

6 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5.25 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

25AA256-E/SM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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