Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.
Add filters
All
Selected
MT47H64M16HR-25E:HTR
Micron Technology
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64K;
MULTI BANK PAGE BURST
.4 ns
AUTO/SELF REFRESH
R-PBGA-B84
e1
12.5 mm
1048576 bit
DDR2 DRAM
16
1
84
65536 words
64K
SYNCHRONOUS
85 Cel
0 Cel
64KX16
PLASTIC/EPOXY
TFBGA
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
YES
1.9 V
1.7 V
1.8
CMOS
OTHER
TIN SILVER COPPER
BALL
.8 mm
BOTTOM
8 mm
MT46H256M32L4JV-5WT:B
DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;
FOUR BANK PAGE BURST
5 ns
200 MHz
COMMON
2,4,8,16
S-PBGA-B168
12 mm
8589934592 bit
DDR1 DRAM
32
168
268435456 words
256M
-25 Cel
256MX32
3-STATE
VFBGA
BGA168,23X23,20
SQUARE
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
260
Not Qualified
8192
1 mm
.00001 Amp
DRAMs
150 mA
1.95 V
Tin/Silver/Copper (Sn/Ag/Cu)
.5 mm
30
MT9KSF51272HZ-1G6E1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Package Shape: RECTANGULAR; Width: 3.8 mm;
SINGLE BANK PAGE BURST
AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
R-XZMA-N204
67.6 mm
38654705664 bit
DDR DRAM MODULE
72
204
536870912 words
512M
70 Cel
512MX72
UNSPECIFIED
DIMM
MICROELECTRONIC ASSEMBLY
30.15 mm
1.45 V
1.283 V
1.35
NO
COMMERCIAL
NO LEAD
.6 mm
ZIG-ZAG
3.8 mm
MTA18ADF1G72PZ-2G1A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
AUTO/SELF REFRESH; WD-MAX
R-XDMA-N288
133.35 mm
77309411328 bit
288
1073741824 words
1G
1GX72
18.9 mm
1.26 V
1.14 V
1.2
DUAL
3.9 mm
MTA18ASF1G72HZ-2G1A1
Micron Technology's MTA18ASF1G72HZ-2G1A1 DDR DRAM MODULE offers 1GX72 organization, 72-bit memory width, and operates at 1.2V. Ideal for servers and high-performance computing applications due to its synchronous operation and self-refresh capability.
DUAL BANK PAGE BURST
R-XZMA-N260
69.6 mm
NOT SPECIFIED
30.13 mm
3.7 mm
MTA18ASF1G72PDZ-2G1A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.2;
31.4 mm
MTA36ASF2G72LZ-2G1A1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Width: 72;
154618822656 bit
2147483648 words
2G
2GX72
MT41J128M16JT-093J:K
DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Operating Mode: SYNCHRONOUS;
R-PBGA-B96
14 mm
2147483648 bit
DDR3 DRAM
96
134217728 words
128M
128MX16
1.575 V
1.425 V
1.5
MT46H128M16LFB7-6IT:B
Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
S-PBGA-B60
10 mm
60
-40 Cel
INDUSTRIAL
IS43TR16128B-15HBLI
Integrated Silicon Solution
IS43TR16128B-15HBLI by Integrated Silicon Solution is a 128MX16 DDR3 DRAM with 667 MHz clock frequency. It operates asynchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
.255 ns
667 MHz
4,8
13 mm
ASYNCHRONOUS
BGA96,9X16,32
.014 Amp
286 mA
9 mm
W971GG6KB25I
Winbond Electronics
Winbond Electronics' W971GG6KB25I is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply, and 84 terminals in a grid array package. It operates synchronously with self-refresh capability and offers multi-bank page burst access mode. Ideal for high-speed memory applications requiring low power consumption and compact design.
400 MHz
1073741824 bit
67108864 words
64M
64MX16
BGA84,9X15,32
.008 Amp
185 mA
MT42L384M32D3LP-18WT:A
LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .4 mm; Operating Mode: SYNCHRONOUS;
SELF REFRESH; IT ALSO REQUIRES 1.2V NOM
S-PBGA-B216
12884901888 bit
LPDDR2 DRAM
216
402653184 words
384M
384MX32
.82 mm
.4 mm
MT42L384M32D3LP-25WT:A
LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 384MX32; No. of Words Code: 384M;
MT8KTF25664HZ-1G6M1
Micron Technology's MT8KTF25664HZ-1G6M1 is a 256MX64 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
800 MHz
e4
17179869184 bit
64
256MX64
DIMM204,24
.096 Amp
1760 mA
Gold (Au)
MT46H128M16LFDD-48AIT:C
LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
4.8 ns
208 MHz
R-PBGA-B60
LPDDR1 DRAM
BGA60,9X10,32
AEC-Q100
90 mA
MT48LC4M32B2B5-6AIT:L
Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.
5.4 ns
166 MHz
1,2,4,8
R-PBGA-B90
134217728 bit
SYNCHRONOUS DRAM
90
4194304 words
4M
4MX32
BGA90,9X15,32
3.3
4096
1,2,4,8,FP
.0025 Amp
180 mA
3.6 V
3 V
MT41K256M16HA-125IT:ETR
Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
4294967296 bit
DDR3L DRAM
256MX16
MT48LC8M16A2B4-6AAAT:L
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY;
S-PBGA-B54
54
8388608 words
8M
105 Cel
8MX16
MT47H128M8CF-3AAT:H
DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
.45 ns
8
128MX8
W9864G6KH-6I
The Winbond Electronics W9864G6KH-6I is a 4MX16 Synchronous DRAM with 67108864-bit memory density. Operating at 3.3V, it features a max access time of 5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed memory solutions in compact form factors.
R-PDSO-G54
22.22 mm
67108864 bit
4MX16
TSOP2
SMALL OUTLINE, THIN PROFILE
GULL WING
10.16 mm
TM124BBK32-80
Texas Instruments
TM124BBK32-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Ideal for applications requiring fast page access and common I/O type in microelectronic assemblies.
FAST PAGE
80 ns
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
R-XSMA-N72
33554432 bit
FAST PAGE DRAM MODULE
1048576 words
1M
1MX32
SIMM
SSIM72
5
1024
25.527 mm
640 mA
5.5 V
4.5 V
1.27 mm
SINGLE
TM124BBK32S-80
TM124BBK32S-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in FAST PAGE access mode with an 80 ns max access time. Ideal for commercial applications requiring high-speed data storage and retrieval.
SMJ44400-10HMM
SMJ44400-10HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 100ns, refresh cycles of 1024, and supports common I/O type. Ideal for military applications due to its MIL-STD screening levels and small outline package style.
100 ns
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
R-CDSO-N20
17.78 mm
4194304 bit
FAST PAGE DRAM
4
20
125 Cel
-55 Cel
1MX4
CERAMIC, METAL-SEALED COFIRED
SON
SOLCC20/26,.4
SMALL OUTLINE
38535Q/M;38534H;883B
2.337 mm
.004 Amp
75 mA
MILITARY
SMJ44400-80HMM
SMJ44400-80HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 80ns, refresh cycles of 1024, and military-grade temperature range. Ideal for applications requiring high-speed memory operations in harsh environments.
85 mA
TMS48C121-10DZ
TMS48C121-10DZ by Texas Instruments is a 128Kx8 DRAM with 131072 words, operating at 5V. It features an asynchronous mode, 100ns access time, and 512 refresh cycles. Ideal for video applications due to its small outline package and CMOS technology.
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT
R-PDSO-J40
26.035 mm
VIDEO DRAM
2
40
131072 words
128K
128KX8
SOJ
SOJ40,.44
512
3.76 mm
.01 Amp
Other Memory ICs
95 mA
J BEND
TMS48C128-80DJ
TMS48C128-80DJ by Texas Instruments is a 128Kx8 FAST PAGE DRAM with 80ns access time, operating at 5V. It features 3-STATE output characteristics and consumes up to 80mA. Ideal for applications requiring high-speed memory operations in commercial temperature environments.
R-PDSO-J24
17.145 mm
24
SOJ24/26,.34
.002 Amp
80 mA
7.57 mm
TMS626402-12DGE
TMS626402-12DGE by Texas Instruments is a 4MX4 Synchronous DRAM with 16777216 bit memory density. Operating at 3.3V, it offers dual bank page burst access mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in compact devices.
CAS BEFORE RAS/SELF REFRESH
R-PDSO-G44
18.41 mm
16777216 bit
44
4MX4
TMS44165-70DZ
TMS44165-70DZ by Texas Instruments is a 256Kx16 DRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast page access in commercial temperature grades.
70 ns
262144 words
256K
256KX16
.001 Amp
120 mA
TM248NBK36R-80
TM248NBK36R-80 by Texas Instruments is a 2MX36 DRAM module with 75497472-bit memory density. It operates at 5V, has a memory width of 36, and offers fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.
75497472 bit
36
2097152 words
2M
2MX36
.018 Amp
1440 mA
TM4100EAD9-80
TM4100EAD9-80 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates asynchronously at 5V, featuring self-refresh capability and fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.
R-XSMA-N30
37748736 bit
9
4MX9
SIM30
20.447 mm
.009 Amp
720 mA
2.54 mm
TM4100GAD8-80
TM4100GAD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring fast memory access and common I/O type in microelectronic assemblies.
4MX8
SMJ4416-15JDL
SMJ4416-15JDL by Texas Instruments is a 16KX4 PAGE MODE DRAM with 16384 words, operating at 5V. It features 3-STATE output, asynchronous mode, and common I/O type. Ideal for applications requiring fast access times and high memory density in commercial temperature environments.
PAGE
150 ns
RAS ONLY REFRESH
R-CDIP-T18
22.606 mm
65536 bit
PAGE MODE DRAM
18
16384 words
16K
16KX4
DIP
DIP18,.3
IN-LINE
256
5.08 mm
NMOS
THROUGH-HOLE
7.62 mm
MT47H128M8SH-187E:M
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
.35 ns
533 MHz
BGA60,9X11,32
MT47H256M4SH-25E:M
256MX4
MT47H64M16NF-187E:M
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT36HTF51272PZ-80EH1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
R-XDMA-N240
240
DIMM240,40
4 mm
.252 Amp
6150 mA
30.175 mm
MT36HVS51272PZ-80EH1
DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
6246 mA
GOLD
17.9 mm
MT18HVS25672PKZ-80EH1
Micron Technology's MT18HVS25672PKZ-80EH1 is a 256MX72 DDR2 DRAM MODULE with 19327352832-bit memory density. Operating at 1.8V, it features synchronous mode and dual bank page burst access for commercial applications. The rectangular microelectronic assembly has a temperature range of 0-70°C, making it suitable for various memory-intensive tasks.
AUTO REFRESH
R-XDMA-N244
82 mm
19327352832 bit
DDR2 DRAM MODULE
244
256MX72
18.2 mm
MT16JSF51264HZ-1G4D1
DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
R-XDMA-N204
34359738368 bit
512MX64
1.5,3.3
.192 Amp
3016 mA
30 mm
MT47H128M4SH-25E:H
536870912 bit
128MX4
MT47H32M16NF-187E:H
33554432 words
32M
32MX16
225 mA
MT47H64M8SH-25EIT:H
Micron Technology's MT47H64M8SH-25EIT:H is a DDR2 DRAM with 64MX8 organization, operating at 400 MHz. It features a 60-terminal grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
64MX8
MT18HVS25672PKZ-80EM1
DDR2 DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Package Shape: RECTANGULAR; Organization: 256MX72;
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX
18.3 mm
MT47H1G4WTR-25E:C
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;
SELF REFRESH
R-PBGA-B63
11.5 mm
63
1GX4
MT47H512M8WTR-25E:C
DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;
512MX8
MT48LC16M16A2B4-6AAAT:G
Micron Technology's MT48LC16M16A2B4-6AAAT:G is a 16MX16 DRAM with 16777216 words, operating at 3.3V. It features synchronous operation, industrial temperature grade, and very thin profile package style. Ideal for applications requiring fast access time and high memory density in automotive electronics or industrial systems.
268435456 bit
16777216 words
16M
16MX16
MT48LC16M16A2B4-6AAIT:G
Micron Technology's MT48LC16M16A2B4-6AAIT:G is a 16MX16 DRAM with 3.3V supply voltage, operating in synchronous mode. It features a grid array package style, very thin profile, and fine pitch terminals. Ideal for industrial applications requiring fast access time and high memory density.
MT48LC16M16A2P-6AAIT:G
Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.
© 2023 All rights reserved
