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ROUND Diodes & Rectifiers 670

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SF30GG-T by Diodes Incorporated

SF30GG-T

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

150 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

400 V

.04 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

30

SF30HG-B by Diodes Incorporated

SF30HG-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.5 V

DO-201AD

O-PALF-W2

e3

1

125 A

1

1

2

150 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

500 V

.05 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

30

SF30HG-T by Diodes Incorporated

SF30HG-T

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.5 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

150 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

500 V

.05 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

30

SF30JG-B by Diodes Incorporated

SF30JG-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.5 V

DO-201AD

O-PALF-W2

e3

1

125 A

1

1

2

150 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

600 V

.05 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

30

MBR3100G by Onsemi

MBR3100G

Onsemi

The Onsemi MBR3100G is a Schottky rectifier diode with a max forward voltage of 0.69V and output current of 3A. It operates b/w -65°C to 175°C, making it suitable for high-efficiency applications. The diode has a max reverse voltage of 100V and non-repetitive peak forward current of 150A, housed in an isolated axial package.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.69 V

DO-201AD

O-PALF-W2

e3

150 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

100 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

MR750G by Onsemi

MR750G

Onsemi

The Onsemi MR750G is a Schottky rectifier diode with 50V reverse voltage, 6A output current, and 1.25V forward voltage. It comes in a plastic/epoxy package style with tin terminal finish and axial position. Ideal for applications requiring high efficiency and low power loss in electronic circuits.

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PADB-W2

e3

400 A

1

1

2

175 Cel

6 A

PLASTIC/EPOXY

ROUND

DISK BUTTON

260

Not Qualified

50 V

Rectifier Diodes

NO

SCHOTTKY

TIN

WIRE

AXIAL

MR750RLG by Onsemi

MR750RLG

Onsemi

MR750RLG by Onsemi is a Schottky rectifier diode with max forward voltage of 1.25V and output current of 6A. It operates at up to 175 °C, making it ideal for high-temperature applications. With a peak reverse voltage of 50V, it suits various electronic circuits requiring efficient power management.

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PADB-W2

e3

400 A

1

1

2

175 Cel

6 A

PLASTIC/EPOXY

ROUND

DISK BUTTON

260

Not Qualified

50 V

Rectifier Diodes

NO

SCHOTTKY

TIN

WIRE

AXIAL

MR754G by Onsemi

MR754G

Onsemi

The Onsemi MR754G is a Schottky rectifier diode with 400V reverse voltage, 6A output current, and 1.25V forward voltage. It is used in applications requiring high efficiency power conversion such as power supplies and battery chargers.

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PADB-W2

e3

400 A

1

1

2

175 Cel

6 A

PLASTIC/EPOXY

ROUND

DISK BUTTON

260

Not Qualified

400 V

Rectifier Diodes

NO

SCHOTTKY

TIN

WIRE

AXIAL

MR754RLG by Onsemi

MR754RLG

Onsemi

MR754RLG by Onsemi is a Schottky rectifier diode with a max forward voltage of 1.25V and output current of 6A. It has a max repetitive peak reverse voltage of 400V, making it ideal for high-power applications in electronics requiring efficient power conversion. The diode's round disk button package style and isolated case connection ensure reliable performance at temperatures up to 175 °C.

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PADB-W2

e3

400 A

1

1

2

175 Cel

6 A

PLASTIC/EPOXY

ROUND

DISK BUTTON

260

Not Qualified

400 V

Rectifier Diodes

NO

SCHOTTKY

Tin (Sn)

WIRE

AXIAL

40

MR756G by Onsemi

MR756G

Onsemi

The Onsemi MR756G is a Schottky rectifier diode with 600V reverse voltage and 6A output current. It has a max forward voltage of 1.25V and operates at temperatures up to 175 °C. Ideal for applications requiring high power efficiency in a compact round disk button package.

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

O-PADB-W2

e3

400 A

1

1

2

175 Cel

6 A

PLASTIC/EPOXY

ROUND

DISK BUTTON

260

Not Qualified

600 V

Rectifier Diodes

NO

SCHOTTKY

TIN

WIRE

AXIAL

10

MSD6100G by Onsemi

MSD6100G

Onsemi

The Onsemi MSD6100G is a common cathode rectifier diode with 2 elements, featuring a max forward voltage of 0.82V and output current of 0.2A. It is designed for applications requiring fast reverse recovery time (0.004us) in small outline packages, suitable for surface mount technology.

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.82 V

TO-226AA

O-PBCY-T3

e1

.5 A

2

3

135 Cel

.2 A

PLASTIC/EPOXY

ROUND

SMALL OUTLINE

260

.625 W

Not Qualified

100 V

.004 us

Rectifier Diodes

YES

TIN SILVER COPPER

FLAT

DUAL

MUR405G by Onsemi

MUR405G

Onsemi

The Onsemi MUR405G is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.035 us and a max forward voltage of 0.71 V. It operates in temperatures ranging from -65 to 175 °C and is ideal for applications requiring high-speed switching capabilities.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.71 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

50 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR415RLG by Onsemi

MUR415RLG

Onsemi

MUR415RLG by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and a max forward voltage of 0.71 V. It is designed for ultra-fast recovery power applications, operating b/w -65°C to 175°C. The diode has a max repetitive peak reverse voltage of 150 V and can handle a max output current of 4 A in an isolated axial package style.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.71 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

150 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR550APFRL by Onsemi

MUR550APFRL

Onsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.98 V

O-PALF-W2

e3

85 A

1

1

2

175 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

520 V

.095 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

MUR550APF by Onsemi

MUR550APF

Onsemi

MUR550APF by Onsemi is a single rectifier diode with ultra-fast recovery time of 0.095 us. It has a max output current of 5A and peak reverse voltage of 520V, making it ideal for applications requiring high-speed switching in temperatures ranging from -65 to 175 °C.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.98 V

O-PALF-W2

e3

85 A

1

1

2

175 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

520 V

.095 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

PR1501S-A by Diodes Incorporated

PR1501S-A

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

50 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

10

PR1501S-B by Diodes Incorporated

PR1501S-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

50 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

10

PR1502S-A by Diodes Incorporated

PR1502S-A

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

100 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

30

PR1502S-B by Diodes Incorporated

PR1502S-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

100 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

30

PR1503S-A by Diodes Incorporated

PR1503S-A

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

200 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

30

PR1503S-B by Diodes Incorporated

PR1503S-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

200 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

30

PR1504S-A by Diodes Incorporated

PR1504S-A

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

400 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

30

PR1504S-B by Diodes Incorporated

PR1504S-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

400 V

.15 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

30

PR1505S-A by Diodes Incorporated

PR1505S-A

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

600 V

.25 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

10

PR1505S-B by Diodes Incorporated

PR1505S-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

600 V

.25 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

10

STTH212RL by STMicroelectronics

STTH212RL

STMicroelectronics

STTH212RL by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and operates at up to 175 °C. It supports 2 A output current and withstands peak reverse voltages of 1200 V. Ideal for demanding applications requiring rapid switching.

FREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.75 V

DO-201AD

O-XALF-W2

e3

40 A

1

1

2

175 Cel

2 A

UNSPECIFIED

ROUND

LONG FORM

Not Qualified

1200 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH212 by STMicroelectronics

STTH212

STMicroelectronics

STTH212 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 1200 V. It operates at temperatures up to 175 °C, making it ideal for demanding applications. With a forward voltage of 1.75 V and output current of 2 A, it's perfect for efficient power management.

FREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.75 V

DO-201AD

O-XALF-W2

e3

40 A

1

1

2

175 Cel

2 A

UNSPECIFIED

ROUND

LONG FORM

Not Qualified

1200 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MR856RLG by Onsemi

MR856RLG

Onsemi

MR856RLG by Onsemi is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a fast reverse recovery time of 0.3us, it operates efficiently in temperatures ranging from -65 to 125°C. Ideal for applications requiring high efficiency and isolation, this diode has a peak reverse voltage of 600V.

FREE WHEELING DIODE

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-201AD

O-PALF-W2

e3

100 A

1

1

2

125 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

.3 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR550APFG by Onsemi

MUR550APFG

Onsemi

MUR550APFG by Onsemi is a single rectifier diode with a max reverse recovery time of 0.095 us. It operates in temperatures ranging from -65 to 175 °C, making it suitable for ultra-fast recovery applications. With a peak repetitive reverse voltage of 520V and output current of 5A, it is ideal for high-power electronic circuits.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.98 V

O-PALF-W2

e3

85 A

1

1

2

175 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

520 V

.095 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

MUR220G by Onsemi

MUR220G

Onsemi

MUR220G by Onsemi is a single rectifier diode with ultra-fast recovery power, ideal for applications requiring high-speed performance. With a max reverse recovery time of 0.035 us and a max output current of 2A, it operates in temperatures ranging from -65 to 175 °C. The diode has a max repetitive peak reverse voltage of 200V and is housed in a plastic/epoxy package with matte tin terminal finish.

FREE WHEELING DIODE

ULTRA FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-41

O-PALF-W2

e3

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MCL103A-TR3 by Vishay Intertechnology

MCL103A-TR3

Vishay Intertechnology

Vishay Intertechnology's MCL103A-TR3 is a Schottky rectifier diode with 40V breakdown voltage, 0.6V forward voltage, and 0.01us reverse recovery time. Ideal for applications requiring fast switching and low power dissipation in surface mount configurations.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

40 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.6 V

O-LELF-R2

e2

1

15 A

1

1

2

125 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

40 V

5 uA

.01 us

30 V

Rectifier Diodes

YES

SCHOTTKY

TIN SILVER

WRAP AROUND

END

30

MCL103B-TR3 by Vishay Intertechnology

MCL103B-TR3

Vishay Intertechnology

MCL103B-TR3 by Vishay Intertechnology is a Schottky rectifier diode with a max forward voltage of 0.6V and output current of 0.2A. It has a reverse test voltage of 20V, making it suitable for applications requiring fast switching speeds and low power dissipation in compact electronic devices. With a surface-mount configuration and isolated case connection, this diode is ideal for use in high-frequency circuits operating at temperatures up to 125°C.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

30 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.6 V

O-LELF-R2

e2

1

15 A

1

1

2

125 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.4 W

Not Qualified

30 V

5 uA

.01 us

20 V

Rectifier Diodes

YES

SCHOTTKY

Tin/Silver (Sn/Ag)

WRAP AROUND

END

40

1N5820-E3/73 by Vishay Intertechnology

1N5820-E3/73

Vishay Intertechnology

1N5820-E3/73 by Vishay Intertechnology is a Schottky rectifier diode with max forward voltage of 0.475V and max output current of 3A. Ideal for fast recovery applications, it has a max repetitive peak reverse voltage of 20V and non-repetitive peak forward current of 80A.

FREE WHEELING DIODE

FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.475 V

DO-201AD

O-PALF-W2

e3

80 A

1

1

2

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

20 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

BAQ334-TR3 by Vishay Intertechnology

BAQ334-TR3

Vishay Intertechnology

BAQ334-TR3 by Vishay Intertechnology is a single rectifier diode with a max forward voltage of 1V and output current of 0.2A. It operates at temperatures up to 175°C, making it suitable for applications requiring high temperature resistance in surface mount configurations. Its glass package body material and isolated case connection enhance durability in various electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

O-LELF-R2

e2

1

2 A

1

1

2

175 Cel

.2 A

GLASS

ROUND

LONG FORM

260

Not Qualified

70 V

Rectifier Diodes

YES

TIN SILVER

WRAP AROUND

END

30

BAQ335-TR3 by Vishay Intertechnology

BAQ335-TR3

Vishay Intertechnology

BAQ335-TR3 by Vishay Intertechnology is a single rectifier diode with a max forward voltage of 1V and output current of 0.2A. It operates at temperatures up to 175°C, making it suitable for various applications requiring high-performance rectification in compact electronic devices.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

O-LELF-R2

e2

1

2 A

1

1

2

175 Cel

.2 A

GLASS

ROUND

LONG FORM

Not Qualified

140 V

Rectifier Diodes

YES

TIN SILVER

WRAP AROUND

END

MUR115G by Onsemi

MUR115G

Onsemi

The Onsemi MUR115G is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 150V. It has a fast max reverse recovery time of 0.035 us, making it suitable for applications requiring efficient switching such as power supplies and inverters. With an operating temperature range from -65 to 175°C, this diode is ideal for various electronic circuits.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.875 V

DO-41

O-PALF-W2

e3

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

150 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR115RLG by Onsemi

MUR115RLG

Onsemi

MUR115RLG by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 150V. With a fast reverse recovery time of 0.035 us, it is ideal for applications requiring efficient power conversion in temperature ranges from -65°C to 175°C. The diode's matte tin terminal finish and isolated case connection make it suitable for various electronic circuits.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.875 V

DO-41

O-PALF-W2

e3

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

150 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR140G by Onsemi

MUR140G

Onsemi

MUR140G by Onsemi is a single rectifier diode with a max forward voltage of 1.25V and output current of 1A. With a max reverse recovery time of 0.075us, it operates in temperatures ranging from -65°C to 175°C. Ideal for applications requiring high-speed switching and efficient power conversion.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-41

O-PALF-W2

e3

35 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH2R02QRL by STMicroelectronics

STTH2R02QRL

STMicroelectronics

STTH2R02QRL by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a max output current of 2 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated case connection ensures reliable performance in various electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-15

O-PALF-W2

e3

75 A

1

1

2

175 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH2R02Q by STMicroelectronics

STTH2R02Q

STMicroelectronics

STTH2R02Q by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a max output current of 2 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated axial design ensures reliable performance in compact circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-15

O-PALF-W2

75 A

1

1

2

175 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

WIRE

AXIAL

NOT SPECIFIED

STTH3R02Q by STMicroelectronics

STTH3R02Q

STMicroelectronics

STTH3R02Q by STMicroelectronics is a single rectifier diode with ultra-fast recovery time of 0.03 us. It has a max forward voltage of 0.8V and output current of 3A, suitable for applications requiring high-speed switching such as power supplies and inverters at temperatures up to 175°C.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-15

O-PALF-W2

e3

75 A

1

1

2

175 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH4R02RL by STMicroelectronics

STTH4R02RL

STMicroelectronics

STTH4R02RL by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a forward current of 4 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated case connection ensures reliable performance in various electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.83 V

DO-201AB

O-PALF-W2

e3

70 A

1

1

2

175 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH4R02 by STMicroelectronics

STTH4R02

STMicroelectronics

STTH4R02 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and can handle up to 4 A output current. It operates at a max temp of 175 °C, making it ideal for high-performance applications. Its isolated case connection ensures reliability in various circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.83 V

DO-201AB

O-PALF-W2

e3

70 A

1

1

2

175 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

SB560A-E3/73 by Vishay Intertechnology

SB560A-E3/73

Vishay Intertechnology

Vishay Intertechnology's SB560A-E3/73 is a Schottky rectifier diode with a max forward voltage of 0.7V and output current of 5A. Operating b/w -65°C to 150°C, it has a max reverse voltage of 60V and non-repetitive peak forward current of 150A. Ideal for applications requiring high efficiency and low power loss in electronic circuits.

FREE WHEELING DIODE

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-201AD

O-PALF-W2

e3

150 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

60 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

UF5407-E3/54 by Vishay Intertechnology

UF5407-E3/54

Vishay Intertechnology

Vishay Intertechnology's UF5407-E3/54 rectifier diode has a max forward voltage of 1.7V and output current of 3A, making it ideal for efficiency applications. With a max reverse recovery time of 0.075us and repetitive peak reverse voltage of 800V, this diode operates in temperatures ranging from -55°C to 150°C.

FREE WHEELING DIODE

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

DO-201AD

O-PALF-W2

e3

150 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

800 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

SRP600K-E3/54 by Vishay Intertechnology

SRP600K-E3/54

Vishay Intertechnology

The Vishay Intertechnology SRP600K-E3/54 is a single rectifier diode with a max forward voltage of 1.3V and output current of 6A. With a fast reverse recovery time of 0.2us, it operates efficiently in temperatures ranging from -50°C to 125°C. Ideal for applications requiring high efficiency and isolated case connection.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-PALF-W2

e3

300 A

1

1

2

125 Cel

-50 Cel

6 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

800 V

.2 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

RGL41M-E3/97 by Vishay Intertechnology

RGL41M-E3/97

Vishay Intertechnology

Vishay Intertechnology's RGL41M-E3/97 is a single rectifier diode with 1A output current and 1000V peak reverse voltage. With 0.5us reverse recovery time, it operates b/w -65°C to 175°C. Ideal for applications requiring high voltage rectification in surface mount packages.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-213AB

O-PELF-R2

e3

1

30 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

1000 V

.5 us

Rectifier Diodes

YES

Matte Tin (Sn)

WRAP AROUND

END

40

RGP15J-E3/54 by Vishay Intertechnology

RGP15J-E3/54

Vishay Intertechnology

The Vishay Intertechnology RGP15J-E3/54 is a single rectifier diode with a max reverse recovery time of 0.25 us and a max reverse current of 5 uA. It has a package shape of round and is suitable for efficiency applications, with an operating temperature range from -65 to 175°C.

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-204AC

O-PALF-W2

e3

50 A

1

1

2

175 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

5 uA

.25 us

600 V

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL