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STTH2R02Q

STMicroelectronics

STTH2R02Q by STMicroelectronics

STTH2R02Q by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a max output current of 2 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated axial design ensures reliable performance in compact circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,868 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,868

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-

-

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Digiode

USA . 3,477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,477

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-

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Anansix

USA . 1,768 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,768

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,848 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

$0.035

10k+ parts

-

1,848

$0.039

-

$0.035

-

MKK Technologies

India . 688 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

10k+ parts

-

688

$0.073

-

-

-

DigiPath Technology Company

USA . 688 parts In-Stock

1+ parts

$0.073

100+ parts

-

1k+ parts

-

10k+ parts

-

688

$0.073

-

-

-

AZTECH Wire

Italy . 184 parts In-Stock

1+ parts

$15.640

100+ parts

-

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10k+ parts

-

184

$15.640

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-

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Corphita

USA . 3,803 parts In-Stock

1+ parts

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100+ parts

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3,803

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-

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Parana Technologies

USA . 298 parts In-Stock

1+ parts

-

100+ parts

$0.046

1k+ parts

-

10k+ parts

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298

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$0.046

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Overview

Elevate your projects with the STTH2R02Q rectifier diode from STMicroelectronics, a leader in high-quality semiconductor solutions. Designed for ultra-fast recovery, this reliable component ensures optimal performance in diverse applications, from power conversion to automotive systems. With exceptional thermal stability and robust construction, it offers unparalleled durability and efficiency, delivering exceptional value that enhances your designs and accelerates innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy improves durability and protects the diode from environmental factors, ensuring long-lasting performance.

Config: SINGLE

A single configuration simplifies circuit design and integration into various applications, making it versatile.

Maximum Reverse Recovery Time: 0.03 µs

The ultra-fast recovery time allows for efficient switching performance, minimizing losses in high-frequency applications.

Package Shape: ROUND

The round package shape is ideal for various mounting applications, providing flexibility in design.

No. of Terminals: 2

Having two terminals allows for straightforward connections in circuit designs, simplifying installation.

Package Style (Meter): LONG FORM

Long-form packaging helps in heat dissipation and provides ample space for convenient mounting.

Application: ULTRA FAST RECOVERY

This diode is tailored for ultra-fast recovery applications, making it suitable for high-speed switching circuits.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for use in demanding environments, enhancing reliability.

Terminal Position: AXIAL

Axial terminal positioning facilitates easy integration into both through-hole and surface mount designs.

Case Connection: ISOLATED

The isolated case connection enhances safety and prevents circuit interference, ensuring stable operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it's designed to efficiently convert AC to DC, making it essential in power supply applications.

Maximum Forward Voltage (VF): 0.8 V

A low forward voltage drop leads to improved efficiency in circuits, reducing power loss during operation.

Maximum Output Current: 2 A

This diode can handle a maximum output current of 2 A, making it suitable for various load applications.

Terminal Form: WIRE

Wire terminals allow for flexible wiring solutions, making it easier to adapt to different circuit designs.

Maximum Repetitive Peak Reverse Voltage: 200 V

The ability to withstand high repetitive peak reverse voltage ensures reliability in high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 75 A

This high peak forward current capability provides robustness during transient conditions, making it ideal for demanding applications.

Diode Element Material: SILICON

Silicon is a widely used material in diode construction, ensuring good conductivity and stability across various conditions.

Technical Specifications

Diodes & Rectifiers STTH2R02Q attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH2R02Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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