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STTH212RL

STMicroelectronics

STTH212RL by STMicroelectronics

STTH212RL by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and operates at up to 175 °C. It supports 2 A output current and withstands peak reverse voltages of 1200 V. Ideal for demanding applications requiring rapid switching.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,197 parts In-Stock

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6,197

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Anansix

USA . 2,779 parts In-Stock

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2,779

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Digiode

USA . 2,724 parts In-Stock

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2,724

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,488 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

$0.075

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1,488

$0.083

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$0.075

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MKK Technologies

India . 975 parts In-Stock

1+ parts

$0.156

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975

$0.156

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DigiPath Technology Company

USA . 975 parts In-Stock

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$0.156

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975

$0.156

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AZTECH Wire

Italy . 1,091 parts In-Stock

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$10.410

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1,091

$10.410

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Component Stockers USA

USA . 209 parts In-Stock

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$99.990

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209

$99.990

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Kepictronics

USA . 4,300 parts In-Stock

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4,300

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Corphita

USA . 805 parts In-Stock

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805

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Parana Technologies

USA . 435 parts In-Stock

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$0.099

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435

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$0.099

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Overview

Unlock the power of efficiency with the STTH212RL by STMicroelectronics, a high-voltage ultra-fast recovery rectifier diode designed to elevate your designs. Renowned for quality and reliability, STMicroelectronics delivers unmatched performance that stands out in critical applications. Experience reduced energy loss and enhanced thermal management, ensuring your systems run smoother and longer. Choose STTH212RL and empower your innovations today!

Feature Benefit Bullets

Config: SINGLE

Single diode configuration ensures simplicity and ease of integration into various circuits, making it a versatile choice for many applications.

Maximum Reverse Recovery Time: 0.075 us

This ultrafast recovery time minimizes energy losses during switching, making it suitable for high-frequency applications.

Package Shape: ROUND

Round package shape facilitates easy mounting and provides adequate protection in various environments, enhancing reliability.

No. of Terminals: 2

With only two terminals, this diode offers straightforward connectivity, simplifying installation and reducing potential failure points.

Package Style (Meter): LONG FORM

The long form package style provides flexibility for assembly and enhances thermal dissipation, ensuring optimal performance.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage applications, this diode is ideal for demanding circuits requiring ultra-fast recovery, ensuring reliable performance.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can function effectively in extreme conditions, making it durable for various applications.

Terminal Finish: MATTE TIN

The matte tin finish offers excellent solderability and corrosion resistance, ensuring long-term reliability of connections.

Terminal Position: AXIAL

Axial terminal positioning makes it easy to implement in tight spaces and ensures efficient PCB layout, enhancing overall design flexibility.

Case Connection: ISOLATED

Isolated case connection improves safety by preventing accidental short circuits, ensuring secure operation within the circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed to handle large currents, making it perfect for converting AC to DC in power applications.

Maximum Forward Voltage (VF): 1.75 V

A relatively low forward voltage drop improves energy efficiency during operation, making it an economical choice for power applications.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode is well-suited for a variety of medium-power applications without overheating.

Terminal Form: WIRE

Wire terminal form allows for easy connection and adaptability in various circuit designs, enhancing installation convenience.

Maximum Repetitive Peak Reverse Voltage: 1200 V

This high reverse voltage capability ensures robustness under stressful conditions, making it suitable for high voltage applications.

Maximum Non-Repetitive Peak Forward Current: 40 A

The ability to handle up to 40 A non-repetitively provides transient current handling, making it resilient against voltage spikes.

Diode Element Material: SILICON

Silicon as a diode element material offers excellent electronic properties, supporting high efficiency and reliability in various applications.

Technical Specifications

Diodes & Rectifiers STTH212RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH212RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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