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STTH4R02

STMicroelectronics

STTH4R02 by STMicroelectronics

STTH4R02 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and can handle up to 4 A output current. It operates at a max temp of 175 °C, making it ideal for high-performance applications. Its isolated case connection ensures reliability in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,366 parts In-Stock

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Vyrian

USA . 2,636 parts In-Stock

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2,636

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Anansix

USA . 850 parts In-Stock

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850

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Lakeland Logistics Inc

USA . 600 parts In-Stock

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600

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Bristol Electronics

USA . 600 parts In-Stock

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600

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 38 parts In-Stock

1+ parts

$0.072

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$0.065

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38

$0.072

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$0.065

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MKK Technologies

India . 403 parts In-Stock

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$0.135

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403

$0.135

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DigiPath Technology Company

USA . 403 parts In-Stock

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$0.135

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403

$0.135

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AZTECH Wire

Italy . 1,071 parts In-Stock

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$12.610

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1,071

$12.610

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A-Z Elektronik GmbH

Germany . 5,249 parts In-Stock

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Corphita

USA . 4,311 parts In-Stock

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Kepictronics

USA . 4,100 parts In-Stock

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Parana Technologies

USA . 39 parts In-Stock

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$0.086

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39

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$0.086

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Overview

Unlock superior performance with the STTH4R02 rectifier diode from STMicroelectronics! Designed for ultra-fast recovery, this reliable component excels in high-temperature applications while providing exceptional efficiency and minimal power loss. With STMicroelectronics' unwavering commitment to quality, you can trust this diode to enhance the reliability of your designs. Experience the perfect blend of innovation and performance, ensuring your projects operate flawlessly!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

A single diode configuration allows for simplified circuit designs and easier integration into existing systems.

Maximum Reverse Recovery Time: 0.03 µs

With a rapid reverse recovery time, this diode is ideal for high-frequency applications, minimizing switching losses.

Package Shape: ROUND

The round package shape can facilitate better airflow and cooling, contributing to the diode's performance and longevity.

No. of Terminals: 2

Two terminals make the diode straightforward to connect in circuits, enhancing ease of use in various designs.

Package Style (Meter): LONG FORM

The long form package style allows for greater flexibility in design and placement within various applications.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode minimizes delays during operation, making it perfect for high-speed applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can function reliably in demanding environments without failure.

Terminal Finish: MATTE TIN

MATTE TIN terminal finish provides excellent solderability and corrosion resistance for reliable electrical connections.

Terminal Position: AXIAL

The axial terminal position is advantageous for compact circuit designs, allowing for space-efficient layouts.

Case Connection: ISOLATED

An isolated case connection enhances safety by preventing any unwanted electrical interactions with other components.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.83 V

The low forward voltage ensures efficient operation with minimal power losses, which is crucial for energy-sensitive applications.

Maximum Output Current: 4 A

With a maximum output current of 4 A, this diode can handle significant load currents, adding versatility to various circuits.

Terminal Form: WIRE

The wire terminal form allows for flexible installation options and compatibility with various connection types in circuit designs.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage rating makes the diode suitable for high-voltage applications, enhancing its applicability.

Maximum Non-Repetitive Peak Forward Current: 70 A

Supporting a non-repetitive peak forward current of 70 A ensures the diode can withstand surge conditions without damage, adding reliability.

Diode Element Material: SILICON

Silicon as the diode element material is well-known for its excellent electrical properties, ensuring high-performance operation.

Technical Specifications

Diodes & Rectifiers STTH4R02 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.83 V

JEDEC-95 Code:

DO-201AB

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH4R02 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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