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MSD6100G

Onsemi

MSD6100G by Onsemi

The Onsemi MSD6100G is a common cathode rectifier diode with 2 elements, featuring a max forward voltage of 0.82V and output current of 0.2A. It is designed for applications requiring fast reverse recovery time (0.004us) in small outline packages, suitable for surface mount technology.

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 68,000 parts In-Stock

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Vyrian

USA . 6,295 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 99 parts In-Stock

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$19.280

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Component Stockers USA

USA . 418 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 15,969 parts In-Stock

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Kulean Microsystems

USA . 8,137 parts In-Stock

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Problanco Electronics

Mexico . 4,428 parts In-Stock

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TANS Electronics

Latvia . 3,423 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,564 parts In-Stock

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Corohmni

South Africa . 362 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your electronic projects with the high-quality MSD6100G diode rectifiers from Onsemi. Designed for efficiency and reliability, these diodes offer a common cathode configuration with two elements, making them ideal for a wide range of applications. With a maximum operating temperature of 135 °C and a peak reflow temperature of 260°C, these diodes are built to withstand demanding environments. Trust Onsemi's reputation for excellence and trust the MSD6100G to deliver exceptional performance, value, and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Having a common cathode configuration with 2 elements allows for easier circuit design and integration in electronic devices.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time ensures efficient and quick switching performance of the diodes.

Surface Mount: YES

Being surface mountable makes the diodes easy to install and saves space on the PCB.

Maximum Operating Temperature: 135 °C

The high maximum operating temperature of 135 °C allows for reliable operation even in high-temperature environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power supply applications, making this product versatile and suitable for various electronic devices.

Maximum Forward Voltage (VF): 0.82 V

The low maximum forward voltage helps in reducing power losses and increasing efficiency in electronic circuits.

Maximum Output Current: 0.2 A

With a maximum output current of 0.2 A, this product is suitable for low to moderate power applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating of 100 V makes this product suitable for use in various voltage circuits.

Technical Specifications

Diodes & Rectifiers MSD6100G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Trade Compliance

MSD6100G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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