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MSD6100RLRE

Onsemi

MSD6100RLRE by Onsemi

The Onsemi MSD6100RLRE is a rectifier diode with common cathode configuration, featuring a max output current of 0.2A and a fast reverse recovery time of 0.004us. This diode is designed for applications requiring high-speed switching and operates within a wide temperature range from -55 °C to 135°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,800 parts In-Stock

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Digiode

USA . 1,193 parts In-Stock

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Kulean Microsystems

USA . 8,297 parts In-Stock

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SupplyDigital Components

Austria . 5,825 parts In-Stock

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Problanco Electronics

Mexico . 5,246 parts In-Stock

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TANS Electronics

Latvia . 1,921 parts In-Stock

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UHIMA Technologies

Türkiye . 935 parts In-Stock

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935

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Corphita

USA . 267 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's MSD6100RLRE diode rectifier. This product embodies the precision and expertise of a manufacturer known for delivering top-notch electronic components. Ideal for a wide range of applications, this diode offers exceptional performance, efficiency, and durability. Its common cathode configuration and fast reverse recovery time make it a valuable asset for your projects. Trust in Onsemi to provide you with a high-quality solution that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, making them suitable for a variety of environments.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and 2 elements provide flexibility in applications.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures efficient operation and minimal power loss.

Package Shape: ROUND

Round shape allows for easy mounting and integration into different systems.

No. of Terminals: 3

Having 3 terminals enables versatile connections and increases compatibility with various circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style facilitates installation and handling of the diodes.

Maximum Operating Temperature: 135 °C

High maximum operating temperature ensures reliability in demanding conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in a wide range of temperatures.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for secure connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and installation process.

Maximum Power Dissipation: 0.625 W

High power dissipation capability ensures stable performance under high loads.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current.

Maximum Output Current: 0.2 A

High maximum output current rating ensures compatibility with various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections.

No. of Elements: 2

Having 2 elements allows for increased current handling capacity and redundancy for reliability.

Diode Element Material: SILICON

Silicon material offers high efficiency and low forward voltage drop for energy-efficient operation.

Technical Specifications

Diodes & Rectifiers MSD6100RLRE attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6100RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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