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MSD6150ZL1

Onsemi

MSD6150ZL1 by Onsemi

The Onsemi MSD6150ZL1 is a rectifier diode with common anode configuration, 2 elements, and 0.1 us reverse recovery time. It operates b/w -55 to 135 °C and has a max power dissipation of 0.625 W. Ideal for applications requiring high-speed switching in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,708 parts In-Stock

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Digiode

USA . 100 parts In-Stock

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100

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Problanco Electronics

Mexico . 8,272 parts In-Stock

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SupplyDigital Components

Austria . 6,921 parts In-Stock

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TANS Electronics

Latvia . 3,513 parts In-Stock

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Kulean Microsystems

USA . 2,437 parts In-Stock

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UHIMA Technologies

Türkiye . 669 parts In-Stock

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Corohmni

South Africa . 257 parts In-Stock

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Corphita

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Overview

Discover the power and reliability of the MSD6150ZL1 diode rectifier by Onsemi. With a reputation for superior quality and performance, Onsemi delivers cutting-edge technology in every product. Ideal for a wide range of applications, this diode offers unmatched value and benefits to customers. From common anode configuration to quick reverse recovery time, this diode is designed to meet your needs with precision and efficiency. Upgrade to the MSD6150ZL1 and experience the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent protection and durability for the diodes, making them suitable for a variety of applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for easier integration and circuit design, making it a versatile choice for different projects.

Maximum Reverse Recovery Time: 0.1 us

The low reverse recovery time ensures efficient performance and minimal energy loss, making these diodes ideal for high-speed applications.

Package Shape: ROUND

The round package shape allows for easy mounting and placement in circuits, providing convenience during installation.

No. of Terminals: 3

With 3 terminals, these diodes can be easily connected in circuits, providing flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and efficient, saving space and allowing for denser circuit layouts.

Maximum Operating Temperature: 135 °C

The high maximum operating temperature of 135 °C ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, these diodes can function in a wide range of temperatures, making them versatile for various applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and solderability, ensuring secure connections in circuits.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and soldering, simplifying the assembly process.

Maximum Power Dissipation: 0.625 W

The high maximum power dissipation of 0.625 watts allows these diodes to handle higher power levels without overheating, ensuring reliability in operation.

Diode Type: RECTIFIER DIODE

Being rectifier diodes, these components are specifically designed for converting AC to DC current efficiently, making them essential for many electronic circuits.

Maximum Output Current: 0.2 A

With a maximum output current of 0.2 amps, these diodes can handle moderate current levels, making them suitable for a variety of electronic applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure mounting on PCBs, providing stability and reliability in circuit connections.

No. of Elements: 2

With 2 elements, these diodes offer redundancy and increased reliability in circuit operation, making them a dependable choice for critical applications.

Diode Element Material: SILICON

Silicon diode elements are known for their efficiency and reliability in rectification applications, ensuring stable performance over time.

Technical Specifications

Diodes & Rectifiers MSD6150ZL1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.1 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6150ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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