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MSD6100RL

Onsemi

MSD6100RL by Onsemi

The Onsemi MSD6100RL is a rectifier diode with common cathode configuration, featuring 0.004 us reverse recovery time. It has a max output current of 0.2 A and can dissipate up to 0.625 W. Ideal for applications requiring fast switching speeds and high power efficiency in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,238 parts In-Stock

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Vyrian

USA . 1,735 parts In-Stock

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Problanco Electronics

Mexico . 2,949 parts In-Stock

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TANS Electronics

Latvia . 1,971 parts In-Stock

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SupplyDigital Components

Austria . 1,513 parts In-Stock

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Kulean Microsystems

USA . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 877 parts In-Stock

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Corphita

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Corohmni

South Africa . 249 parts In-Stock

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Overview

Unlock a world of possibilities with the MSD6100RL by Onsemi. Crafted with precision and expertise, this diode & rectifier boasts top-notch quality and reliability. From common cathode configuration to fast reverse recovery time, this product is designed to exceed expectations. Whether you're in need of power supplies, battery chargers, or inverters, the MSD6100RL delivers unmatched performance and efficiency. Say goodbye to compromise and hello to innovation with Onsemi's exceptional diodes & rectifiers. Elevate your projects today with the MSD6100RL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diodes, ensuring long-term reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and easy circuit integration.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures minimal power loss and high efficiency in switching applications.

Package Shape: ROUND

Round package shape provides efficient heat dissipation and compact design for space-constrained applications.

No. of Terminals: 3

3 terminals allow for easy and secure connection in the circuit, improving overall reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides mechanical strength and ease of handling during assembly.

Maximum Operating Temperature: 135 °C

High maximum operating temperature allows for operation in a wide range of environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable performance even in extreme cold environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting on PCBs and efficient heat dissipation.

Maximum Power Dissipation: 0.625 W

High maximum power dissipation rating ensures the diode can handle high power loads without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC, making it suitable for a wide range of power supply applications.

Maximum Output Current: 0.2 A

High maximum output current rating allows for the diode to handle higher current loads with ease.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure mechanical support and easy soldering during assembly.

No. of Elements: 2

2 diode elements allow for greater efficiency and higher current handling capacity in the circuit.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, efficiency, and temperature stability for long-term performance.

Technical Specifications

Diodes & Rectifiers MSD6100RL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6100RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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