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MSD6100RLRA

Onsemi

MSD6100RLRA by Onsemi

The Onsemi MSD6100RLRA is a rectifier diode with common cathode, 2 elements. It has a max forward voltage of 0.82V and output current of 0.2A. Ideal for applications requiring fast reverse recovery time, such as power supplies and battery chargers.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 82,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

82,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 82,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

82,000

-

-

-

$0.070

Verical

USA . 82,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

82,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,154 parts In-Stock

1+ parts

$0.041

100+ parts

-

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1,154

$0.041

-

-

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Vyrian

USA . 1,361 parts In-Stock

1+ parts

$0.043

100+ parts

-

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10k+ parts

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1,361

$0.043

-

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-

DigiKey Marketplace

USA . 82,000 parts In-Stock

1+ parts

-

100+ parts

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82,000

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-

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Chip Stock

USA . 45,000 parts In-Stock

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45,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 81,781 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

10k+ parts

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81,781

$0.037

-

-

-

Corphita

USA . 2,048 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

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2,048

$0.039

-

-

-

Corohmni

South Africa . 466 parts In-Stock

1+ parts

$0.043

100+ parts

-

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466

$0.043

-

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Continental Prestige Electronics

USA . 82,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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$0.049

82,000

-

-

-

$0.049

TANS Electronics

Latvia . 4,834 parts In-Stock

1+ parts

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4,834

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Problanco Electronics

Mexico . 4,798 parts In-Stock

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4,798

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SupplyDigital Components

Austria . 3,573 parts In-Stock

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3,573

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QUARKTWIN TECHNOLOGY LTD

USA . 3,320 parts In-Stock

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3,320

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Kepictronics

USA . 1,900 parts In-Stock

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1,900

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Kulean Microsystems

USA . 1,465 parts In-Stock

1+ parts

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1,465

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UHIMA Technologies

Türkiye . 224 parts In-Stock

1+ parts

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224

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Overview

Unlock new possibilities with the MSD6100RLRA by Onsemi. Crafted with precision and expertise, this diode & rectifier offers unparalleled quality and performance. Whether you're in automotive, industrial, or consumer electronics, this product is designed to exceed your expectations. Experience seamless operation, enhanced efficiency, and reliable power delivery. Elevate your projects with the MSD6100RLRA and witness the difference that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode elements, ensuring durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and having 2 elements provides redundancy and improved performance.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time ensures efficient switching and reduces power losses.

Package Shape: ROUND

Round shape allows for easy mounting and efficient space utilization.

No. of Terminals: 3

Provides necessary connectivity options for various circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is commonly used and ensures compatibility with standard mounting systems.

Maximum Operating Temperature: 135 °C

High maximum operating temperature allows for use in a wide range of applications without risk of damage.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for secure connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to solder and integrate into circuit boards.

Maximum Power Dissipation: 0.625 W

High power dissipation capability allows for handling higher currents without overheating.

Peak Reflow Temperature °C: 235

Peak reflow temperature tolerance ensures reliable performance during soldering processes.

Diode Type: RECTIFIER DIODE

Rectifier diode type is commonly used for converting AC to DC, making it versatile for different applications.

Maximum Forward Voltage (VF): 0.82 V

Low forward voltage drop ensures efficient energy conversion and minimal power losses.

Maximum Output Current: 0.2 A

Able to handle moderate output currents, suitable for a wide range of electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connections for reliable performance.

No. of Elements: 2

Having 2 elements provides redundancy and improved performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage tolerance allows for use in various voltage applications with protection.

Maximum Non Repetitive Peak Forward Current: 0.5 A

Can handle short duration high forward currents without damage, ensuring reliability in transient conditions.

Diode Element Material: SILICON

Silicon diode material is widely used for its reliability, efficiency, and temperature tolerance.

Technical Specifications

Diodes & Rectifiers MSD6100RLRA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6100RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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