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MSD6150RL1

Onsemi

MSD6150RL1 by Onsemi

The Onsemi MSD6150RL1 is a rectifier diode with common anode configuration and 2 elements. It has a max reverse recovery time of 0.1 us, making it suitable for applications requiring fast switching speeds. With a max output current of 0.2 A and operating temperature range from -55 to 135 °C, it is ideal for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,395 parts In-Stock

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Vyrian

USA . 1,614 parts In-Stock

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Problanco Electronics

Mexico . 5,858 parts In-Stock

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SupplyDigital Components

Austria . 3,877 parts In-Stock

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TANS Electronics

Latvia . 1,992 parts In-Stock

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Corphita

USA . 1,782 parts In-Stock

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Kulean Microsystems

USA . 1,496 parts In-Stock

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UHIMA Technologies

Türkiye . 826 parts In-Stock

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Corohmni

South Africa . 294 parts In-Stock

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Overview

Boost your electronic projects with the reliable MSD6150RL1 diode by Onsemi. Manufactured with top-notch quality and precision, this diode offers unmatched performance and durability for a wide range of applications. From power supplies to voltage regulators, this rectifier diode is essential for ensuring smooth operation and efficient power management. Trust Onsemi to deliver exceptional value and benefits with the MSD6150RL1, providing customers with the advantage they need to succeed in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, making the product durable and safe for use.

Config: COMMON ANODE, 2 ELEMENTS

Allows for easy integration into circuits requiring common anode configurations with 2 diode elements.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures efficient operation and reduces switching losses in applications.

Package Shape: ROUND

Round shape allows for easy mounting and integration into various systems or PCB designs.

No. of Terminals: 3

3 terminals provide flexibility in circuit connections and options for different configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is commonly used and easily recognizable, allowing for quick identification during assembly.

Maximum Operating Temperature: 135 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in a wide range of applications, including those with cold environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure mounting on PCBs or other surfaces.

Maximum Power Dissipation: 0.625 W

High maximum power dissipation rating ensures the diodes can handle high power levels without failure.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC in various electronic circuits.

Maximum Output Current: 0.2 A

High maximum output current rating allows for the diodes to handle significant current flow without overheating.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connections and ease of soldering during assembly.

No. of Elements: 2

Having 2 diode elements in the package allows for dual functionality or redundancy in the circuit design.

Diode Element Material: SILICON

Silicon diode element material is reliable, widely used, and provides good performance in rectifier applications.

Technical Specifications

Diodes & Rectifiers MSD6150RL1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.1 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6150RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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