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MSD6100RL1

Onsemi

MSD6100RL1 by Onsemi

The Onsemi MSD6100RL1 is a rectifier diode with common cathode configuration and 2 silicon elements. It has a max output current of 0.2A and a max reverse recovery time of 0.004us, making it suitable for applications requiring fast switching speeds in temperatures ranging from -55 to 135 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,407 parts In-Stock

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Digiode

USA . 806 parts In-Stock

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SupplyDigital Components

Austria . 7,681 parts In-Stock

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Kulean Microsystems

USA . 6,523 parts In-Stock

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TANS Electronics

Latvia . 4,051 parts In-Stock

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Problanco Electronics

Mexico . 3,877 parts In-Stock

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Corphita

USA . 1,396 parts In-Stock

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Corohmni

South Africa . 455 parts In-Stock

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UHIMA Technologies

Türkiye . 84 parts In-Stock

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Overview

Elevate your electronic designs with the MSD6100RL1 diode by Onsemi. Crafted with precision and quality, this diode offers superior performance and reliability for a wide range of applications. Whether you're working on power supplies, battery chargers, or LED lighting, this diode's fast reverse recovery time and common cathode configuration ensure optimal efficiency. Trust in Onsemi's expertise and innovation to deliver a product that exceeds expectations. Upgrade your projects today with the MSD6100RL1 diode – where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and ensures durability of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and 2 elements provide redundancy.

Maximum Reverse Recovery Time: 0.004 us

Short reverse recovery time ensures efficient operation and fast switching.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various applications.

No. of Terminals: 3

Having 3 terminals allows for more flexible connection options in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving.

Maximum Operating Temperature: 135 °C

High maximum operating temperature allows for use in a wide range of environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode can function in cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for easy assembly.

Terminal Position: BOTTOM

Bottom terminal position allows for streamlined PCB layout and connection.

Maximum Power Dissipation: 0.625 W

High power dissipation capability ensures the diode can handle current surges without damage.

Diode Type: RECTIFIER DIODE

Rectifier diode is commonly used in power supplies and rectification circuits.

Maximum Output Current: 0.2 A

Suitable maximum output current for various low to medium power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form makes it easy to insert and solder the diode onto a PCB.

No. of Elements: 2

Having 2 elements provides redundancy and reliability in the circuit.

Diode Element Material: SILICON

Silicon diode element material is commonly used for its stable and reliable performance.

Technical Specifications

Diodes & Rectifiers MSD6100RL1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6100RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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