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MSD6100RLRAG

Onsemi

MSD6100RLRAG by Onsemi

The Onsemi MSD6100RLRAG is a rectifier diode with common cathode configuration, 2 elements, and max reverse recovery time of 0.004 us. It operates at a max forward voltage of 0.82 V and output current of 0.2 A. Ideal for applications requiring fast switching speeds in electronic circuits.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 37,889 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

37,889

-

$0.053

$0.044

$0.039

DigiKey

USA . 37,889 parts In-Stock

1+ parts

-

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$0.070

37,889

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$0.070

Verical

USA . 37,889 parts In-Stock

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$0.049

37,889

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$0.049

Distributors (In-Stock)

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Digiode

USA . 1,290 parts In-Stock

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$0.041

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1,290

$0.041

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Vyrian

USA . 1,270 parts In-Stock

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$0.043

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1,270

$0.043

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DigiKey Marketplace

USA . 38,039 parts In-Stock

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38,039

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Chip Stock

USA . 16,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,531 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,531

$0.039

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Corohmni

South Africa . 490 parts In-Stock

1+ parts

$0.043

100+ parts

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490

$0.043

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Continental Prestige Electronics

USA . 38,039 parts In-Stock

1+ parts

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$0.049

38,039

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$0.049

QUARKTWIN TECHNOLOGY LTD

USA . 9,287 parts In-Stock

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9,287

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TANS Electronics

Latvia . 8,263 parts In-Stock

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8,263

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Problanco Electronics

Mexico . 7,911 parts In-Stock

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SupplyDigital Components

Austria . 6,626 parts In-Stock

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Kulean Microsystems

USA . 4,365 parts In-Stock

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UHIMA Technologies

Türkiye . 64 parts In-Stock

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64

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Overview

Discover the power and efficiency of the MSD6100RLRAG diode & rectifier by Onsemi. With a focus on quality and precision, Onsemi delivers cutting-edge technology that exceeds industry standards. This versatile component is perfect for a wide range of applications, providing reliable performance and durability. Offering fast reverse recovery time and high power dissipation, this product ensures optimal functioning in any circuit. Trust Onsemi to provide the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.004 us

The ultra-fast reverse recovery time of 0.004 us ensures efficient and quick switching, making it ideal for high-speed applications.

Maximum Operating Temperature: 135 °C

With a high maximum operating temperature of 135 °C, this diode can withstand a wide range of temperature conditions, increasing its versatility.

Maximum Power Dissipation: 0.625 W

The low power dissipation of 0.625 W helps in reducing heat generation and improving the overall efficiency of the circuit.

Maximum Forward Voltage (VF): 0.82 V

The low forward voltage of 0.82 V results in lower power losses and higher efficiency in forward conduction.

Maximum Output Current: 0.2 A

The high maximum output current of 0.2 A allows this diode to handle higher loads without the risk of damage.

Technical Specifications

Diodes & Rectifiers MSD6100RLRAG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Trade Compliance

MSD6100RLRAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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