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MSD6150RLRM

Onsemi

MSD6150RLRM by Onsemi

The Onsemi MSD6150RLRM is a rectifier diode with common anode configuration, featuring 0.1 us reverse recovery time and 0.2 A max output current. It is used in applications requiring fast switching speeds and low power dissipation, suitable for temperatures ranging from -55 to 135 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,555 parts In-Stock

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Digiode

USA . 1,515 parts In-Stock

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Problanco Electronics

Mexico . 7,394 parts In-Stock

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TANS Electronics

Latvia . 4,196 parts In-Stock

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SupplyDigital Components

Austria . 3,588 parts In-Stock

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Corphita

USA . 1,508 parts In-Stock

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UHIMA Technologies

Türkiye . 678 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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Kulean Microsystems

USA . 195 parts In-Stock

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Overview

Unleash the power of innovation with the MSD6150RLRM by Onsemi. This high-quality diode and rectifier offers unmatched performance and reliability, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for a wide range of applications, this product provides exceptional value and benefits to customers looking for a durable and efficient solution. Experience the advantages of this cutting-edge technology and take your projects to new heights with the MSD6150RLRM from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the diodes, making them suitable for various environments.

Maximum Reverse Recovery Time: 0.1 us

Fast reverse recovery time ensures efficient operation and quick response of the diodes.

Maximum Operating Temperature: 135 °C

With a high maximum operating temperature, these diodes can withstand heat and operate reliably in challenging conditions.

Maximum Power Dissipation: 0.625 W

The diodes have a maximum power dissipation of 0.625 W, allowing them to handle higher power levels without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC currents efficiently, making them ideal for various rectification applications.

Technical Specifications

Diodes & Rectifiers MSD6150RLRM attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.625 W

Qualification:

Not Qualified

Maximum Reverse Recovery Time:

.1 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MSD6150RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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