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MBR3100G

Onsemi

MBR3100G by Onsemi

The Onsemi MBR3100G is a Schottky rectifier diode with a max forward voltage of 0.69V and output current of 3A. It operates b/w -65°C to 175°C, making it suitable for high-efficiency applications. The diode has a max reverse voltage of 100V and non-repetitive peak forward current of 150A, housed in an isolated axial package.

Median Price

$0.401

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (In-Stock)

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Tomark Electronics Ltd

UK . 14,490 parts In-Stock

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$0.090

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$0.090

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Component Electronics Inc.

Canada . 4 parts In-Stock

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$0.380

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$0.290

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$0.250

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4

$0.380

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Nova Conductors

Japan . 950 parts In-Stock

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$0.421

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950

$0.421

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Bristol Electronics

USA . 70 parts In-Stock

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$0.450

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$0.180

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70

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Chip Stock

USA . 6,530 parts In-Stock

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Vyrian

USA . 5,390 parts In-Stock

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Flip Electronics

USA . 2,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,980 parts In-Stock

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Connect4Technologies Inc.

Canada . 1,490 parts In-Stock

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Digiode

USA . 1,326 parts In-Stock

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First Choice Components Inc.

USA . 616 parts In-Stock

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PAR Electronics

UK . 365 parts In-Stock

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Prism Electronics

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Semi Source

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NAC Semi

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Microfarads

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,212 parts In-Stock

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$0.010

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Corohmni

South Africa . 160 parts In-Stock

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$0.090

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Continental Prestige Electronics

USA . 13,575 parts In-Stock

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$0.421

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$0.413

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$0.413

Argo Parts USA

USA . 5,217 parts In-Stock

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$0.421

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$0.408

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$0.408

Netroflash

USA . 1,000 parts In-Stock

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$0.421

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AZTECH Wire

Italy . 874 parts In-Stock

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$8.215

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Perfect Parts

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Kulean Microsystems

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SupplyDigital Components

Austria . 6,080 parts In-Stock

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TANS Electronics

Latvia . 5,606 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

USA . 2,921 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,989 parts In-Stock

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Corphita

USA . 1,974 parts In-Stock

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Problanco Electronics

Mexico . 1,698 parts In-Stock

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UHIMA Technologies

Türkiye . 592 parts In-Stock

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Overview

Discover the power of efficiency with the Onsemi MBR3100G diode rectifier. Manufactured by a trusted leader in the industry, this product offers superior quality and reliability for a wide range of applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 100V, this Schottky technology diode provides exceptional performance in a compact package. Say goodbye to inefficiency and hello to improved productivity with the Onsemi MBR3100G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diode, making it suitable for a variety of applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Output Current: 3 A

Capable of handling a high output current, making it suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching compared to standard diodes, improving efficiency.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltages without breakdown, ensuring reliability in the circuit.

Technical Specifications

Diodes & Rectifiers MBR3100G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.69 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR3100G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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