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MUR550APFG

Onsemi

MUR550APFG by Onsemi

MUR550APFG by Onsemi is a single rectifier diode with a max reverse recovery time of 0.095 us. It operates in temperatures ranging from -65 to 175 °C, making it suitable for ultra-fast recovery applications. With a peak repetitive reverse voltage of 520V and output current of 5A, it is ideal for high-power electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,861 parts In-Stock

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Digiode

USA . 1,771 parts In-Stock

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AZTECH Wire

Italy . 994 parts In-Stock

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$21.860

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994

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Kulean Microsystems

USA . 6,911 parts In-Stock

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SupplyDigital Components

Austria . 6,427 parts In-Stock

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TANS Electronics

Latvia . 5,665 parts In-Stock

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Problanco Electronics

Mexico . 3,011 parts In-Stock

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Corphita

USA . 1,253 parts In-Stock

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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Corohmni

South Africa . 104 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the MUR550APFG diode rectifier! This ultra-fast recovery diode offers unmatched performance for a wide range of applications, from power supplies to industrial equipment. With a maximum output current of 5A and a peak repetitive reverse voltage of 520V, this diode ensures optimal efficiency and protection for your electronic devices. Trust Onsemi for top-notch technology and seamless integration in your projects. Choose the MUR550APFG for unbeatable value and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection and insulation for the diode, ensuring a longer lifespan and reliable performance.

Config: SINGLE

Simplifies installation and operation as only one diode needs to be used.

Maximum Reverse Recovery Time: 0.095 us

Ultra-fast recovery time ensures efficient operation and minimizes power losses.

Package Shape: ROUND

Allows for easy mounting and integration into various electronic systems.

No. of Terminals: 2

Simplifies connection and reduces complexity in circuit design.

Package Style (Meter): LONG FORM

Provides flexibility in mounting options and allows for easy identification.

Application: ULTRA FAST RECOVERY

Ideal for applications requiring high-speed switching and efficiency.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments without compromising performance.

Minimum Operating Temperature: -65 °C

Ensures reliable operation even in extreme cold conditions.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: AXIAL

Simplifies installation and connection in linear configurations.

Case Connection: ISOLATED

Prevents interference and ensures proper functioning of the diode in the circuit.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without damage.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.98 V

Low forward voltage drop leads to minimal power loss and improved efficiency.

Maximum Output Current: 5 A

Capable of handling high current loads, suitable for a wide range of applications.

Terminal Form: WIRE

Provides easy and secure connection in various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 520 V

Can handle high voltage levels safely, suitable for demanding applications.

Maximum Non Repetitive Peak Forward Current: 85 A

Capable of handling high peak currents for short durations, ideal for surge protection.

Diode Element Material: SILICON

Offers good electrical properties and durability, ensuring reliable performance over time.

Technical Specifications

Diodes & Rectifiers MUR550APFG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

85 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

520 V

Maximum Reverse Recovery Time:

.095 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR550APFG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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