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MUR550PF

Onsemi

MUR550PF by Onsemi

The Onsemi MUR550PF is a single rectifier diode with ultra-fast recovery power, ideal for applications requiring high-speed performance. With a max reverse recovery time of 0.095 us and a peak repetitive peak reverse voltage of 520V, it operates at temperatures up to 175 °C. The package style is flange mount with a rectangular shape and through-hole terminal form, making it suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,392 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 143 parts In-Stock

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$11.350

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,368 parts In-Stock

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SupplyDigital Components

Austria . 7,220 parts In-Stock

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Problanco Electronics

Mexico . 4,877 parts In-Stock

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TANS Electronics

Latvia . 3,758 parts In-Stock

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Corphita

USA . 2,144 parts In-Stock

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Kulean Microsystems

USA . 1,926 parts In-Stock

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UHIMA Technologies

Türkiye . 667 parts In-Stock

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Corohmni

South Africa . 476 parts In-Stock

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Overview

Experience the power of innovation with the MUR550PF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that exceed expectations. The MUR550PF is designed for ultra-fast recovery power applications, offering customers reliability and efficiency. With a maximum output current of 5A and a peak repetitive peak reverse voltage of 520V, this product ensures optimal performance under any circumstance. Trust Onsemi to provide cutting-edge technology that empowers your projects to reach new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.095 us

The ultra fast reverse recovery time allows for efficient switching and reduces power losses in the circuit.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can be used in a wide range of applications without overheating.

Maximum Output Current: 5 A

The high output current capability makes this diode suitable for applications requiring higher power levels.

Maximum Repetitive Peak Reverse Voltage: 520 V

This high reverse voltage rating allows the diode to withstand voltage spikes and surges without failing.

Technical Specifications

Diodes & Rectifiers MUR550PF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

520 V

Maximum Reverse Recovery Time:

.095 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MUR550PF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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