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MUR5150E

Onsemi

MUR5150E by Onsemi

The Onsemi MUR5150E is a single rectifier diode with a max reverse recovery time of 0.175 us and a max output current of 5A. It is designed for ultra-fast recovery power applications, featuring a max repetitive peak reverse voltage of 1500V and a max non-repetitive peak forward current of 100A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 700 parts In-Stock

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Vyrian

USA . 351 parts In-Stock

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351

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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TANS Electronics

Latvia . 7,414 parts In-Stock

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Kulean Microsystems

USA . 6,318 parts In-Stock

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SupplyDigital Components

Austria . 5,272 parts In-Stock

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Problanco Electronics

Mexico . 1,894 parts In-Stock

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Corphita

USA . 1,284 parts In-Stock

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UHIMA Technologies

Türkiye . 673 parts In-Stock

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Corohmni

South Africa . 385 parts In-Stock

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Overview

Unlock the power of ultra-fast recovery with the MUR5150E by Onsemi. Designed for high-performance applications, this rectifier diode offers unparalleled quality and reliability that you can trust. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 1500V, this diode is perfect for a wide range of power applications. Whether you're looking to improve efficiency or enhance performance, the MUR5150E delivers unmatched value and benefits to meet your needs. Trust in Onsemi's expertise and experience in diodes and rectifiers to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures that the diode is lightweight and durable, making it suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.175 us

The ultra-fast reverse recovery time of 0.175 us ensures efficient operation and quick response in high-speed electronic circuits.

Maximum Output Current: 5 A

With a maximum output current of 5 A, this diode can handle high power loads, making it suitable for power electronics applications.

Maximum Repetitive Peak Reverse Voltage: 1500 V

The high maximum repetitive peak reverse voltage of 1500 V makes this diode suitable for high voltage applications where reliability is important.

Technical Specifications

Diodes & Rectifiers MUR5150E attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.175 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MUR5150E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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