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MUR550-HF-B

Rectron

MUR550-HF-B by Rectron

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Diodes & Rectifiers MUR550-HF-B attributes and parameters. Explore more Diodes & Rectifiers devices from Rectron

Specs

Additional Features:

HIGH RELIABILITY

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

85 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Repetitive Peak Reverse Voltage:

500 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.095 us

Reverse Test Voltage:

500 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

MUR550-HF-B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Rectron

Rectron Limited was established in January 1976 in Tu-Cheng, Taipei by a team of experienced semiconductor engineers. Financed locally, Rectron very quickly emerged as a recognized supplier of quality discrete semi-conductors. In 1981, Rectron increased sales revenues with direct access to the global semiconductor market via a network of exclusive Distributors and Agents. Rectron received approval for initial Public Offering of common stock in January 1985 and has opened wholly owned subsidiaries in Los Angeles, USA; London, England; and Hong Kong. Further expansion came in early 1994 when Rectron commissioned a plant in China to enhance our competitive advantage and increase discrete product manufacturing capacity.

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