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MUR415RLG

Onsemi

MUR415RLG by Onsemi

MUR415RLG by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and a max forward voltage of 0.71 V. It is designed for ultra-fast recovery power applications, operating b/w -65°C to 175°C. The diode has a max repetitive peak reverse voltage of 150 V and can handle a max output current of 4 A in an isolated axial package style.

Median Price

$0.241

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 2 parts In-Stock

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$0.241

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$0.200

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$0.179

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$0.179

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Digiode

USA . 275 parts In-Stock

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Nova Conductors

Japan . 45 parts In-Stock

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Vyrian

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ABC Electronics Ltd.

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ACDS - Activité Composants Distribution Service

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EPE Components Inc.

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Bristol Electronics

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Ampacity Inc.

Singapore . 2 parts In-Stock

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$0.168

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Corphita

USA . 100 parts In-Stock

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$0.178

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Corohmni

South Africa . 288 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Continental Prestige Electronics

USA . 2 parts In-Stock

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AZTECH Wire

Italy . 308 parts In-Stock

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Metaverse IC Inc.

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Lixinc

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Perfect Parts

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CPlus Electronics

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Problanco Electronics

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UHIMA Technologies

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Overview

Looking for a high-quality solution for your ultra-fast recovery power applications? Look no further than the MUR415RLG by Onsemi. With its reliable single diode rectifier design, this product offers unmatched performance and efficiency. Whether you're working on industrial equipment or consumer electronics, the MUR415RLG provides a seamless solution with its matte tin terminal finish and isolated case connection. Trust Onsemi's reputation for excellence and choose the MUR415RLG for your next project. Unlock the potential of your designs with this top-of-the-line diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the diode reliable for long-term use.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast recovery time ensures efficient operation and minimal loss of energy during switching.

Application: ULTRA FAST RECOVERY POWER

Designed for applications requiring quick recovery and high power capabilities, making it suitable for demanding environments.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this diode can withstand elevated temperatures without compromising performance.

Maximum Forward Voltage (VF): 0.71 V

Low forward voltage drop minimizes power loss and improves overall efficiency of the diode.

Technical Specifications

Diodes & Rectifiers MUR415RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR415RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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