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MUR4100ERL

Onsemi

MUR4100ERL by Onsemi

MUR4100ERL by Onsemi is a single rectifier diode with a max output current of 4A and a max repetitive peak reverse voltage of 1000V. It features an ultra-fast recovery power application, with a max reverse recovery time of 0.1us. The diode operates at temperatures up to 175°C and utilizes avalanche technology for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip Stock

USA . 35,500 parts In-Stock

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Pegasus Components GmbH

Germany . 3,000 parts In-Stock

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ECAB

Sweden . 2,790 parts In-Stock

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Digiode

USA . 1,255 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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Vyrian

USA . 851 parts In-Stock

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851

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Velocity Electronics

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784

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 42,055 parts In-Stock

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$0.131

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$0.131

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Ampacity Inc.

Singapore . 984 parts In-Stock

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$1.010

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984

$1.010

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Semicontronic

India . 573 parts In-Stock

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$1.010

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$0.985

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$0.980

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573

$1.010

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$0.980

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AZTECH Wire

Italy . 851 parts In-Stock

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$13.710

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851

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Authorized Procurement Solutions

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Lixinc

USA . 8,968 parts In-Stock

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Problanco Electronics

Mexico . 6,616 parts In-Stock

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Continental Prestige Electronics

USA . 6,057 parts In-Stock

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Kulean Microsystems

USA . 4,433 parts In-Stock

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Argo Parts USA

USA . 2,928 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,851 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,415 parts In-Stock

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SupplyDigital Components

Austria . 822 parts In-Stock

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UHIMA Technologies

Türkiye . 457 parts In-Stock

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Kepictronics

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Corohmni

South Africa . 150 parts In-Stock

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Bastille Electronics

Australia . 52 parts In-Stock

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Overview

Power up your projects with the high-quality MUR4100ERL diode by Onsemi. As a leader in the industry, Onsemi delivers reliable and efficient products like the MUR4100ERL, perfect for ultra-fast recovery power applications. With a maximum repetitive peak reverse voltage of 1000V and a maximum output current of 4A, this rectifier diode offers exceptional performance and value. Trust Onsemi for all your diode and rectifier needs and experience the advantages of top-notch technology and innovation in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for various applications.

Config: SINGLE

Being a single configuration simplifies the design and installation process, making it a practical choice for users.

Maximum Reverse Recovery Time: 0.1 us

With a fast reverse recovery time, this diode ensures efficient energy conversion and performance.

Package Shape: ROUND

The round shape allows for easy installation and integration into different systems, enhancing flexibility in usage.

No. of Terminals: 2

With only two terminals, this diode is easy to connect and suitable for straightforward circuit designs.

Package Style (Meter): LONG FORM

The long form package style offers stability and secure connections, ideal for power applications.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, this diode delivers high performance under demanding conditions.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand heat and operate efficiently in various environments.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring a long-lasting and reliable connection.

Terminal Position: AXIAL

The axial terminal position simplifies installation and maintenance, making this diode user-friendly.

Case Connection: ISOLATED

The isolated case connection enhances safety by preventing short circuits and ensuring reliable performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this diode can withstand high temperature soldering processes for secure mounting.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC with high efficiency and low forward voltage drop.

Maximum Forward Voltage (VF): 1.8 V

The low maximum forward voltage ensures minimal power loss and efficient energy conversion in the circuit.

Maximum Output Current: 4 A

With a high maximum output current, this diode can handle heavy loads and provide reliable power delivery.

Technology: AVALANCHE

The avalanche technology used in this diode ensures reliable performance under high voltage and current conditions.

Terminal Form: WIRE

The wire terminal form offers flexibility and ease of connection, making this diode suitable for various applications.

No. of Elements: 1

With only one element, this diode is simple in design and reliable in performance.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high maximum repetitive peak reverse voltage makes this diode suitable for high voltage applications where reliability is crucial.

No. of Phases: 1

Being a single-phase diode simplifies the circuit design and operation, making it a practical choice for many applications.

Maximum Non Repetitive Peak Forward Current: 70 A

With a high maximum non-repetitive peak forward current, this diode can handle surges and overloads without compromising performance.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high efficiency, reliability, and durability in operation.

Technical Specifications

Diodes & Rectifiers MUR4100ERL attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Recovery Time:

.1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MUR4100ERL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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