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STTH3R02Q

STMicroelectronics

STTH3R02Q by STMicroelectronics

STTH3R02Q by STMicroelectronics is a single rectifier diode with ultra-fast recovery time of 0.03 us. It has a max forward voltage of 0.8V and output current of 3A, suitable for applications requiring high-speed switching such as power supplies and inverters at temperatures up to 175°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,685 parts In-Stock

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6,685

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Martec Srl

Italy . 3,123 parts In-Stock

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3,123

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Digiode

USA . 2,037 parts In-Stock

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2,037

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ComSIT Distribution GmbH

Germany . 947 parts In-Stock

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947

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Zilex Electronics Inc.

Canada . 729 parts In-Stock

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729

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Anansix

USA . 198 parts In-Stock

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198

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 152 parts In-Stock

1+ parts

$0.040

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152

$0.040

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IDEA Electronic Components Group

UK . 974 parts In-Stock

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$0.101

100+ parts

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$0.091

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974

$0.101

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$0.091

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MKK Technologies

India . 708 parts In-Stock

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$0.190

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708

$0.190

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DigiPath Technology Company

USA . 708 parts In-Stock

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$0.190

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708

$0.190

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Corohmni

South Africa . 1,058 parts In-Stock

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$0.191

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1,058

$0.191

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Ampacity Inc.

Singapore . 1,518 parts In-Stock

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$2.010

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1,518

$2.010

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Semicontronic

India . 1,316 parts In-Stock

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$2.010

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$1.960

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$1.950

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1,316

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 680 parts In-Stock

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$18.730

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680

$18.730

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Continental Prestige Electronics

USA . 6,895 parts In-Stock

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RC Electronics

USA . 2,900 parts In-Stock

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2,900

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Argo Parts USA

USA . 1,776 parts In-Stock

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Corphita

USA . 1,300 parts In-Stock

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1,300

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Parana Technologies

USA . 1,283 parts In-Stock

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$0.121

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1,283

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$0.121

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Bastille Electronics

Australia . 51 parts In-Stock

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51

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Overview

Unlock the potential of your electronic devices with the STTH3R02Q rectifier diode by STMicroelectronics. Manufactured with precision and expertise, this ultra-fast recovery diode offers unparalleled quality and reliability. Its applications in various industries make it a versatile choice for your projects. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 200V, this diode provides efficient performance while ensuring long-lasting durability. Trust STMicroelectronics to deliver cutting-edge technology that exceeds your expectations. Experience the difference with the STTH3R02Q diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, increasing its durability and reliability.

Maximum Reverse Recovery Time: 0.03 us

Ultra fast recovery time ensures quick response and efficient operation of the diode.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures without losing functionality, making it suitable for various applications.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop indicates minimal energy loss, leading to higher efficiency.

Maximum Output Current: 3 A

Capable of handling high currents, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

Can withstand high reverse voltages, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STTH3R02Q attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH3R02Q Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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