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2 Diodes & Rectifiers 2,400+

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SBRB1545CTT4G by Onsemi

SBRB1545CTT4G

Onsemi

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

POWER

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.84 V

R-PSSO-G2

e3

1

150 A

2

1

2

175 Cel

-65 Cel

7.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

SBRB81545CTT4G by Onsemi

SBRB81545CTT4G

Onsemi

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

POWER

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.84 V

R-PSSO-G2

e3

150 A

2

1

2

175 Cel

-65 Cel

7.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

45 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

SBRD81035CTLT4G by Onsemi

SBRD81035CTLT4G

Onsemi

SBRD81035CTLT4G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 35V. It is designed for power applications with a max output current of 5A and forward voltage of 0.56V. The diode operates b/w -55 to 150 °C, making it suitable for various electronic devices.

FREE WHEELING DIODE

POWER

35 V

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.56 V

R-PSSO-G2

e3

1

50 A

2

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

35 V

2000 uA

35 V

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

SBRD8835LT4G by Onsemi

SBRD8835LT4G

Onsemi

SBRD8835LT4G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 35V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. Operating temperatures range from -65°C to 150°C, making it suitable for various electronic systems.

FREE WHEELING DIODE

POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.51 V

R-PSSO-G2

e3

1

75 A

1

1

2

150 Cel

-65 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

35 V

1400 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

SBRS8320T3G by Onsemi

SBRS8320T3G

Onsemi

The Onsemi SBRS8320T3G is a Schottky rectifier diode with 20V max reverse voltage and 4A max output current. It is designed for power applications, featuring a small outline package style and dual terminals. With a peak reflow temp of 260 °C, it meets AEC-Q101 standards for automotive use.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-J2

e3

1

80 A

1

1

2

-65 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

20 V

2000 uA

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

J BEND

DUAL

30

SSRD8620CTT4G by Onsemi

SSRD8620CTT4G

Onsemi

SSRD8620CTT4G by Onsemi is a common cathode diode with 2 elements, featuring ultra-fast soft recovery power for applications. It has a max reverse recovery time of 0.055 us and a max forward voltage of 1.35 V, suitable for high-speed rectification tasks in electronics. The diode operates b/w -55 to 175 °C and can handle a max output current of 3 A.

FREE WHEELING DIODE

ULTRA FAST SOFT RECOVERY POWER

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.35 V

R-PSSO-G2

e3

1

50 A

2

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

5 uA

.055 us

Rectifier Diodes

YES

MATTE TIN

GULL WING

SINGLE

30

SURA8140T3G by Onsemi

SURA8140T3G

Onsemi

SURA8140T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.065 us and max output current of 2A. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a matte tin terminal finish.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-J2

e3

1

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

400 V

5 uA

.065 us

400 V

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

SURA8210T3G by Onsemi

SURA8210T3G

Onsemi

SURA8210T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.03 us and max reverse current of 2 uA. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2 A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

100 V

SINGLE

SILICON

RECTIFIER DIODE

.94 V

R-PDSO-J2

e3

1

50 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

100 V

2 uA

.03 us

100 V

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

SURA8215T3G by Onsemi

SURA8215T3G

Onsemi

SURA8215T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.035 us and max output current of 2 A. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a max repetitive peak reverse voltage of 150 V.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

150 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-J2

e3

1

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

150 V

2 uA

.035 us

150 V

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

SURA8220T3G by Onsemi

SURA8220T3G

Onsemi

SURA8220T3G by Onsemi is a single diode with a reverse test voltage of 200V and max forward voltage of 0.95V. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C. This small outline rectifier diode has a max output current of 2A and non-repetitive peak forward current of 40A.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

200 V

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-J2

e3

1

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

200 V

2 uA

.035 us

200 V

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

SURA8240T3G by Onsemi

SURA8240T3G

Onsemi

SURA8240T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.065 us and max forward voltage of 1.3V. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, making it suitable for various electronic devices requiring efficient power management.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-J2

e3

1

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

400 V

5 uA

.065 us

Rectifier Diodes

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

SURA8260T3G by Onsemi

SURA8260T3G

Onsemi

SURA8260T3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.075 us and max output current of 2A. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, featuring a matte tin terminal finish.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

1.45 V

R-PDSO-J2

e3

1

30 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

600 V

5 uA

.075 us

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

SURB1620CTT4G by Onsemi

SURB1620CTT4G

Onsemi

SURB1620CTT4G by Onsemi is a common cathode diode with ultra-fast recovery power. It has a max reverse recovery time of 0.035 us, max output current of 8A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high-speed rectification in electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY POWER

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.975 V

R-PSSO-G2

e3

1

100 A

2

1

2

175 Cel

-65 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

5 uA

.035 us

YES

MATTE TIN

GULL WING

SINGLE

30

SURD8320T4G by Onsemi

SURD8320T4G

Onsemi

SURD8320T4G by Onsemi is a single rectifier diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.035 us, max forward voltage of 0.95 V, and can handle a max output current of 3 A. Ideal for use in environments with operating temperatures ranging from -65 to 175 °C.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY POWER

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PSSO-G2

e3

1

75 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

5 uA

.035 us

Rectifier Diodes

YES

MATTE TIN

GULL WING

SINGLE

30

SURS8210T3G by Onsemi

SURS8210T3G

Onsemi

SURS8210T3G by Onsemi is a single diode with 0.03 us reverse recovery time and 2 uA reverse current. It is used in high voltage ultra fast recovery power applications, operating b/w -60 to 175 °C. The diode has a max forward voltage of 0.94 V and can handle up to 2 A output current.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

.94 V

R-PDSO-J2

e3

1

50 A

1

1

2

175 Cel

-60 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

2 uA

.03 us

Rectifier Diodes

YES

MATTE TIN

J BEND

DUAL

30

SURS8220T3G by Onsemi

SURS8220T3G

Onsemi

SURS8220T3G by Onsemi is a single rectifier diode with 0.035 us reverse recovery time and 2 uA reverse current. It operates in high voltage ultra-fast power applications, with a max forward voltage of 0.95 V and output current of 2 A. Suitable for temperatures ranging from -65 to 175 °C, it has a matte tin finish and dual terminals.

FREE WHEELING DIODE

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-J2

e3

1

40 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

200 V

2 uA

.035 us

Rectifier Diodes

YES

Matte Tin (Sn) - annealed

J BEND

DUAL

NOT SPECIFIED

NRVB120ESFT3G by Onsemi

NRVB120ESFT3G

Onsemi

NRVB120ESFT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates b/w -65 °C to 150°C, has a peak reflow temperature of 260°C, and can handle up to 20V reverse voltage. Ideal for automotive applications due to AEC-Q101 compliance.

FREE WHEELING DIODE

SINGLE

SILICON

RECTIFIER DIODE

.36 V

R-PDSO-F2

e3

1

40 A

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

20 V

Rectifier Diodes

YES

SCHOTTKY

TIN

FLAT

DUAL

30

NRVB120LSFT1G by Onsemi

NRVB120LSFT1G

Onsemi

NRVB120LSFT1G by Onsemi is a Schottky rectifier diode with 20V max reverse voltage and 1A output current. It operates b/w -55 to 125 °C, making it ideal for automotive applications due to AEC-Q101 compliance. This single-configured diode in small outline package suits surface mount designs.

FREE WHEELING DIODE

SINGLE

SILICON

RECTIFIER DIODE

.26 V

R-PDSO-F2

e3

1

50 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

20 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVBA130LT3G by Onsemi

NRVBA130LT3G

Onsemi

NRVBA130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.47V. It operates b/w -55 to 125 °C, making it suitable for automotive applications requiring high efficiency and low power loss in a compact small outline package.

FREE WHEELING DIODE

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

.47 V

R-PDSO-C2

e3

1

25 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

1000 uA

30 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

SBR3045CTB-13-G by Diodes Incorporated

SBR3045CTB-13-G

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

FAST SOFT RECOVERY

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.7 V

TO-263AB

R-PSSO-G2

e3

1

180 A

2

1

2

150 Cel

-65 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

300 uA

Rectifier Diodes

YES

MATTE TIN

GULL WING

SINGLE

30

BAV3004WQ-7-F by Diodes Incorporated

BAV3004WQ-7-F

Diodes Incorporated

Diodes Inc.'s BAV3004WQ-7-F is a single rectifier diode with a max reverse recovery time of 0.05 us and a max forward voltage of 0.87 V. It operates in temperatures ranging from -65 to 150 °C and has a peak repetitive peak reverse voltage of 350 V, making it ideal for automotive applications due to its AEC-Q101 reference standard compliance.

HIGH RELIABILITY

SINGLE

SILICON

RECTIFIER DIODE

.87 V

R-PDSO-G2

e3

1

4 A

1

1

2

150 Cel

-65 Cel

.225 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.4 W

AEC-Q101

350 V

.05 us

Rectifier Diodes

YES

MATTE TIN

GULL WING

DUAL

S1MR2 by Taiwan Semiconductor

S1MR2

Taiwan Semiconductor

S1MR2 by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and forward voltage of 1.1V. It has a max reverse recovery time of 1.5us, making it suitable for applications requiring fast switching speeds in electronic circuits. The diode's small outline package style and surface mount capability make it ideal for compact designs where space is limited.

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AC

R-PDSO-C2

e3

1

30 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

1000 V

1.5 us

Rectifier Diodes

YES

MATTE TIN

C BEND

DUAL

10

STPSC6H065G-TR by STMicroelectronics

STPSC6H065G-TR

STMicroelectronics

STPSC6H065G-TR by STMicroelectronics is a Schottky rectifier diode with 650V reverse voltage, 6A output current, and 1.75V forward voltage. It is ideal for power applications due to its silicon carbide element material and operating temperature range of -40 to 175 °C.

POWER

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

R-PSSO-G2

e3

1

52 A

1

1

2

175 Cel

-40 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

650 V

60 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

STTH20L03CG-TR by STMicroelectronics

STTH20L03CG-TR

STMicroelectronics

STTH20L03CG-TR by STMicroelectronics is a common cathode diode with ultra-fast soft recovery. It has a max reverse recovery time of 0.035 us and can handle up to 150A non-repetitive peak forward current. Ideal for applications requiring high-speed switching and low reverse current, operating b/w -40 °C to 175°C.

ULTRA FAST SOFT RECOVERY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.2 V

R-PSSO-G2

150 A

2

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

300 V

10 uA

.035 us

YES

GULL WING

SINGLE

STTH3010WY by STMicroelectronics

STTH3010WY

STMicroelectronics

STTH3010WY by STMicroelectronics is a single rectifier diode with 1000V peak reverse voltage, 30A output current, and 0.1us reverse recovery time. Ideal for high voltage ultra-fast soft recovery applications. Operates b/w -40 to 175°C with matte tin finish and silicon element material.

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2 V

DO-247

R-PSFM-T2

e3

180 A

1

1

2

175 Cel

-40 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

AEC-Q101

1000 V

15 uA

.1 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MBR745C0G by Taiwan Semiconductor

MBR745C0G

Taiwan Semiconductor

MBR745C0G by Taiwan Semiconductor is a Schottky rectifier diode with max output current of 7.5A and max repetitive peak reverse voltage of 45V. It operates b/w -55 to 150°C, ideal for efficiency applications requiring low forward voltage drop (0.84V) and high reverse current (100uA).

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.84 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

7.5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

45 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

TIN

THROUGH-HOLE

SINGLE

10

RFN10TF6S by ROHM

RFN10TF6S

ROHM

ROHM's RFN10TF6S is a single rectifier diode with 0.05 us reverse recovery time and 10 uA reverse current. It has a max forward voltage of 1.55 V and output current of 10 A, suitable for super fast recovery applications at up to 150°C operating temperature.

SUPER FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.55 V

TO-220AC

R-PSFM-T2

100 A

1

1

2

150 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

600 V

10 uA

.05 us

Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SK24-AU_R1_000A1 by Panjit International

SK24-AU_R1_000A1

Panjit International

SK24-AU_R1_000A1 by Panjit Int. is a Schottky rectifier diode with 40V max reverse voltage, 2A output current, and 0.5V forward voltage. It's a single-config, dual-terminal device in small outline package ideal for efficiency applications at -55 to 150°C operating temp.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AA

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101; TS 16949

40 V

90 uA

YES

SCHOTTKY

TIN

C BEND

DUAL

SK26-AU_R1_000A1 by Panjit International

SK26-AU_R1_000A1

Panjit International

SK26-AU_R1_000A1 by Panjit Int. is a Schottky rectifier diode with max forward voltage of 0.7V and output current of 2A. It operates b/w -55 to 150°C, ideal for efficiency applications in automotive industry due to AEC-Q101 compliance and TS16949 certification.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AA

R-PDSO-C2

e3

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101; TS 16949

60 V

90 uA

YES

SCHOTTKY

TIN

C BEND

DUAL

STPS1545DY by STMicroelectronics

STPS1545DY

STMicroelectronics

STMicroelectronics STPS1545DY is a Schottky rectifier diode with 45V peak reverse voltage and 220A peak forward current. It operates b/w -40 to 175 °C, ideal for fast recovery power applications. The single-terminal device has a max forward voltage of 0.84V and low reverse current of 200uA, housed in a plastic flange mount package.

FREE WHEELING DIODE

FAST RECOVERY POWER

SINGLE

SILICON

RECTIFIER DIODE

.84 V

TO-220AC

R-PSFM-T2

220 A

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

AEC-Q101

45 V

200 uA

NO

SCHOTTKY

THROUGH-HOLE

SINGLE

NOT SPECIFIED

STTH30L06WY by STMicroelectronics

STTH30L06WY

STMicroelectronics

STTH30L06WY by STMicroelectronics is a single rectifier diode with 600V peak reverse voltage, 0.09us reverse recovery time, and 25uA reverse current. It is designed for high voltage ultra-fast recovery applications, operating b/w -40 to 175°C. The diode features a plastic/epoxy package body material and through-hole terminal form for flange mount style.

HIGH VOLTAGE ULTRA FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.55 V

DO-247

R-PSFM-T2

300 A

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

AEC-Q101

600 V

25 uA

.09 us

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MBRAF1540T3G by Onsemi

MBRAF1540T3G

Onsemi

MBRAF1540T3G by Onsemi is a Schottky rectifier diode with a max output current of 1.5A and a max repetitive peak reverse voltage of 40V. It is designed for power applications, operates b/w -55 to 150 °C, and features a small outline package style suitable for surface mount assembly.

FREE WHEELING DIODE

POWER

SINGLE

SILICON

RECTIFIER DIODE

.54 V

R-PDSO-F2

e3

1

40 A

1

1

2

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

800 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

BAV5004LP-7B by Diodes Incorporated

BAV5004LP-7B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST RECOVERY

400 V

SINGLE

SILICON

RECTIFIER DIODE

1.29 V

R-PBCC-N2

e4

1

3 A

1

1

2

150 Cel

-55 Cel

.3 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.35 W

400 V

100 uA

.05 us

240 V

Rectifier Diodes

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SS34R6 by Taiwan Semiconductor

SS34R6

Taiwan Semiconductor

SS34R6 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.75V. It is designed for efficiency applications, operating b/w -55°C to 150°C. This single-configured diode comes in a small outline package suitable for surface mount technology.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

SS34R7 by Taiwan Semiconductor

SS34R7

Taiwan Semiconductor

SS34R7 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.75V. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. With a peak reflow temperature of 250°C, it offers reliable performance in various electronic devices.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

SS36R6 by Taiwan Semiconductor

SS36R6

Taiwan Semiconductor

SS36R6 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.75V. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. With a peak reflow temperature of 250°C and matte tin terminal finish, it offers reliable performance in various electronic devices.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

1N4935GR0G by Taiwan Semiconductor

1N4935GR0G

Taiwan Semiconductor

1N4935GR0G by Taiwan Semiconductor is a single rectifier diode with 200V max repetitive peak reverse voltage. It has a fast 0.2us max reverse recovery time and can handle up to 1A of output current. Ideal for applications requiring high-speed switching in temperatures ranging from -55°C to 150°C.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-204AL

O-PALF-W2

e3

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

.2 us

NO

MATTE TIN

WIRE

AXIAL

10

STPSC10H065D by STMicroelectronics

STPSC10H065D

STMicroelectronics

STPSC10H065D by STMicroelectronics is a single Schottky rectifier diode with 650V reverse voltage, 10A output current, and 1.75V forward voltage. It operates b/w -40 to 175°C, ideal for power applications requiring high efficiency and low reverse current. The diode's silicon carbide element and matte tin finish ensure reliable performance in various electronic systems.

POWER

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

TO-220AC

R-PSFM-T2

e3

80 A

1

1

2

175 Cel

-40 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

650 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

STPSC4H065D by STMicroelectronics

STPSC4H065D

STMicroelectronics

STPSC4H065D by STMicroelectronics is a single Schottky rectifier diode with 650V reverse voltage, 4A output current, and 1.75V forward voltage. It is designed for power applications with an operating temperature range of -40 to 175°C. The diode features a plastic/epoxy package body material and matte tin terminal finish in a rectangular flange mount style.

POWER

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

TO-220AC

R-PSFM-T2

e3

35 A

1

1

2

175 Cel

-40 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

650 V

40 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

STPSC8H065G-TR by STMicroelectronics

STPSC8H065G-TR

STMicroelectronics

STPSC8H065G-TR by STMicroelectronics is a Schottky rectifier diode with 650V reverse voltage, 8A output current, and 1.75V forward voltage. It is ideal for power applications, operates b/w -40 to 175°C, and features a small outline package for surface mount assembly.

POWER

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.75 V

R-PSSO-G2

e3

1

69 A

1

1

2

175 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

650 V

80 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

STTH1210DY by STMicroelectronics

STTH1210DY

STMicroelectronics

STTH1210DY by STMicroelectronics is a single rectifier diode with 1000V peak reverse voltage and 12A output current. It features 0.09us reverse recovery time, ideal for high voltage ultra-fast soft recovery applications. The diode operates b/w -40 to 175°C, making it suitable for various industrial uses.

LOW LEAKAGE CURRENT, SNUBBER DIODE

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2 V

TO-220AC

R-PSFM-T2

e3

80 A

1

1

2

175 Cel

-40 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

AEC-Q101

1000 V

10 uA

.09 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

STTH602CBY-TR by STMicroelectronics

STTH602CBY-TR

STMicroelectronics

STTH602CBY-TR by STMicroelectronics is a common cathode diode with 2 elements, featuring ultra-fast recovery time of 0.03 us and max reverse current of 3 uA. Ideal for applications requiring high-speed rectification, it operates b/w -40 to 175 °C and has a max output current of 3 A.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.25 V

R-PSSO-G2

e3

1

60 A

2

1

2

175 Cel

-40 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

3 uA

.03 us

Rectifier Diodes

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SK34-AU_R1_000A1 by Panjit International

SK34-AU_R1_000A1

Panjit International

SK34-AU_R1_000A1 by Panjit International is a Schottky rectifier diode with a max forward voltage of 0.75V and output current of 3A. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

AEC-Q101

50 V

100 uA

YES

SCHOTTKY

C BEND

DUAL

NOT SPECIFIED

MBR10100C0G by Taiwan Semiconductor

MBR10100C0G

Taiwan Semiconductor

MBR10100C0G by Taiwan Semiconductor is a Schottky rectifier diode with 100V max repetitive peak reverse voltage and 10A max output current. It operates b/w -55 to 150°C, ideal for efficiency applications. The diode has a max forward voltage of 0.85V and a package style of flange mount for easy installation.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.85 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

100 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

10

HS1DLR3G by Taiwan Semiconductor

HS1DLR3G

Taiwan Semiconductor

HS1DLR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. It is designed for applications requiring fast switching speeds, such as power supplies and battery chargers. With a small outline package style and matte tin terminal finish, it operates efficiently in temperatures ranging from -55°C to 150°C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

.05 us

YES

MATTE TIN

FLAT

DUAL

30

HS1JLR3G by Taiwan Semiconductor

HS1JLR3G

Taiwan Semiconductor

HS1JLR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 600V. It has a fast max reverse recovery time of 0.075us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's small outline package style and surface mount configuration make it ideal for compact electronic designs in temperatures ranging from -55°C to 150°C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

.075 us

YES

MATTE TIN

FLAT

DUAL

30

HS1MLRVG by Taiwan Semiconductor

HS1MLRVG

Taiwan Semiconductor

HS1MLRVG by Taiwan Semiconductor is a single rectifier diode with a max reverse recovery time of 0.075 us and a max output current of 1 A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a breakdown voltage of 1000 V.

LOW POWER LOSS

EFFICIENCY

1000 V

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

.075 us

YES

MATTE TIN

FLAT

DUAL

30

SPV1512N by STMicroelectronics

SPV1512N

STMicroelectronics

SPV1512N by STMicroelectronics is a single rectifier diode with a max output current of 16A and a max repetitive peak reverse voltage of 12V. It is designed for applications requiring high efficiency in small outline packages, suitable for surface mount assembly. Operating temperature ranges from -40 to 150 °C as per IEC-61000-4-5 standard.

IR-NOM

GENERAL PURPOSE

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-N2

1

1

2

150 Cel

-40 Cel

16 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

IEC-61000-4-5

12 V

10 uA

Rectifier Diodes

YES

NO LEAD

DUAL

NOT SPECIFIED