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STTH20L03CG-TR

STMicroelectronics

STTH20L03CG-TR by STMicroelectronics

STTH20L03CG-TR by STMicroelectronics is a common cathode diode with ultra-fast soft recovery. It has a max reverse recovery time of 0.035 us and can handle up to 150A non-repetitive peak forward current. Ideal for applications requiring high-speed switching and low reverse current, operating b/w -40 °C to 175°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,560 parts In-Stock

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5,560

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Anansix

USA . 2,812 parts In-Stock

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2,812

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Digiode

USA . 572 parts In-Stock

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572

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,136 parts In-Stock

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$0.046

100+ parts

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$0.041

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1,136

$0.046

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$0.041

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MKK Technologies

India . 1,208 parts In-Stock

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$0.086

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1,208

$0.086

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DigiPath Technology Company

USA . 1,208 parts In-Stock

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$0.086

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1,208

$0.086

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AZTECH Wire

Italy . 85 parts In-Stock

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$17.600

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85

$17.600

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QUARKTWIN TECHNOLOGY LTD

USA . 8,592 parts In-Stock

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Corphita

USA . 4,493 parts In-Stock

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Perfect Parts

USA . 3,866 parts In-Stock

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3,866

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Parana Technologies

USA . 1,305 parts In-Stock

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$0.055

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1,305

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$0.055

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Overview

Experience the superior performance and reliability of the STTH20L03CG-TR diode by STMicroelectronics. With a focus on quality and innovation, STMicroelectronics is a trusted manufacturer in the industry. This diode, designed for ultra-fast soft recovery applications, offers customers unmatched value and benefits. Whether used in power supplies, inverters, or industrial equipment, this diode delivers efficiency and durability. Trust STMicroelectronics to provide cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diodes, making them durable and long-lasting.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration with other circuits, and having 2 elements provides redundancy and reliability.

Surface Mount: YES

Surface mount design makes installation easy and efficient, especially for compact electronic devices.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast reverse recovery time ensures efficient and quick operation of the diodes, reducing power loss and improving overall performance.

Maximum Reverse Current: 10 uA

Low reverse current minimizes power wastage and improves energy efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting in electronic devices, optimizing space usage.

Application: ULTRA FAST SOFT RECOVERY

Designed for ultra fast soft recovery, ensuring smooth and reliable operation in high-speed circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the diodes to withstand heat and perform reliably in demanding environments.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the diodes can operate in a wide range of temperature conditions, enhancing versatility.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing complexity in circuit design.

Case Connection: CATHODE

Having cathode as the case connection provides easy referencing and connection in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current (AC) into direct current (DC), making this product suitable for various power supply applications.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop minimizes power loss and heat generation, improving efficiency of the diodes.

Terminal Form: GULL WING

Gull wing terminal form provides secure and stable connection, reducing the risk of disconnection or malfunction.

No. of Elements: 2

Having 2 elements provides redundancy and reliability in the circuit, ensuring continuous operation in case of failure of one element.

Maximum Repetitive Peak Reverse Voltage: 300 V

High reverse voltage rating allows the diodes to handle high voltage spikes and surges, improving overall circuit protection.

Maximum Non Repetitive Peak Forward Current: 150 A

High forward current rating allows the diodes to handle large current surges, making them suitable for high-power applications.

Diode Element Material: SILICON

Silicon diode elements are known for their reliability, efficiency, and low cost, making them a popular choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers STTH20L03CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

STTH20L03CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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