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SBRD8835LT4G

Onsemi

SBRD8835LT4G by Onsemi

SBRD8835LT4G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 35V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. Operating temperatures range from -65°C to 150°C, making it suitable for various electronic systems.

Median Price

$0.848

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 5,000 parts In-Stock

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$0.406

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$0.406

Element14

Singapore . 5,000 parts In-Stock

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$1.290

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Chip Stock

USA . 26,580 parts In-Stock

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Vyrian

USA . 7,352 parts In-Stock

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Digiode

USA . 194 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,987 parts In-Stock

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$0.412

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$0.412

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Corohmni

South Africa . 233 parts In-Stock

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$1.120

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AZTECH Wire

Italy . 810 parts In-Stock

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$16.450

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Kulean Microsystems

USA . 7,962 parts In-Stock

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TANS Electronics

Latvia . 6,406 parts In-Stock

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

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Lixinc

USA . 4,119 parts In-Stock

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SupplyDigital Components

Austria . 2,521 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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Problanco Electronics

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Perfect Parts

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Aranea Global

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Overview

Enhance your power applications with the SBRD8835LT4G by Onsemi. Crafted with precision and quality, this rectifier diode offers a reliable performance that exceeds expectations. With a maximum output current of 8A and a Schottky technology design, this diode ensures efficiency and durability for all your power needs. Whether you're working on automotive or industrial projects, the SBRD8835LT4G is the perfect solution. Trust in Onsemi's reputation for excellence and elevate your designs with this high-quality diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode lightweight and durable, ideal for various power applications.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it easier to incorporate into a system.

Surface Mount: YES

Being surface mountable, this diode can be easily and securely mounted on a PCB, saving space and reducing assembly time.

Maximum Reverse Current: 1400 uA

With a low maximum reverse current, this diode offers efficient performance and helps prevent damage to the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into different systems and provides a stable mounting surface.

No. of Terminals: 2

The two terminals offer a straightforward connection setup, making it convenient for users to install and maintain.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and ensures efficient heat dissipation, enhancing overall performance.

Application: POWER

This diode is designed for power applications, ensuring reliable and consistent performance under high-power conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand heat and maintain functionality in demanding environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range allows for use in extreme cold conditions without compromising performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring a secure and reliable connection.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of wiring errors, making it user-friendly.

Case Connection: CATHODE

The cathode case connection design enhances circuit protection and helps prevent reverse voltage damage, ensuring long-term reliability.

Maximum Time At Peak Reflow Temperature (s): 30

With a quick maximum time at peak reflow temperature, this diode is easy to solder and install, saving time and effort.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability ensures stable and secure solder joints, reducing the risk of disconnection.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this diode meets stringent automotive industry requirements for quality and performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.51 V

The low maximum forward voltage drop ensures minimal power loss and efficient energy conversion, improving overall system efficiency.

Maximum Output Current: 8 A

With a high maximum output current rating, this diode can handle demanding power loads and provide reliable performance.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and stable connection, reducing the risk of solder joint failure and ensuring consistent performance.

Maximum Repetitive Peak Reverse Voltage: 35 V

The high maximum repetitive peak reverse voltage rating offers robust protection against reverse voltage spikes, ensuring long-term reliability.

Maximum Non Repetitive Peak Forward Current: 75 A

With a high maximum non-repetitive peak forward current rating, this diode can handle transient surges and protect the circuit from damage.

Diode Element Material: SILICON

Made of high-quality silicon, this diode element material ensures reliable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers SBRD8835LT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.51 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

1400 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8835LT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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