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SBRS8320T3G

Onsemi

SBRS8320T3G by Onsemi

The Onsemi SBRS8320T3G is a Schottky rectifier diode with 20V max reverse voltage and 4A max output current. It is designed for power applications, featuring a small outline package style and dual terminals. With a peak reflow temp of 260 °C, it meets AEC-Q101 standards for automotive use.

Median Price

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Lifecycle Status

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5

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1k+

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AZTECH Wire

Italy . 948 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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TANS Electronics

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Overview

Enhance your power applications with the SBRS8320T3G by Onsemi. Crafted with precision and quality, this Schottky rectifier diode offers a maximum output current of 4A and a forward voltage of just 0.5V, ensuring efficient power management. With a small outline package style and dual terminals, this diode is designed for easy installation in various power systems. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and unlock the full potential of your power applications with the SBRS8320T3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on PCBs.

Maximum Reverse Current: 2000 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Space-saving design for efficient PCB layout.

Application: POWER

Suitable for power applications, providing reliable performance.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop, making them efficient for power applications.

Maximum Output Current: 4 A

Can handle high output currents, suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

Can withstand high reverse voltages, ensuring reliability in the circuit.

Technical Specifications

Diodes & Rectifiers SBRS8320T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

2000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS8320T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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