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SURB1620CTT4G

Onsemi

SURB1620CTT4G by Onsemi

SURB1620CTT4G by Onsemi is a common cathode diode with ultra-fast recovery power. It has a max reverse recovery time of 0.035 us, max output current of 8A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high-speed rectification in electronic circuits.

Median Price

$1.450

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

$1.400

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$1.160

10k+ parts

$1.040

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$1.400

$1.160

$1.040

DigiKey

USA . 1,600 parts In-Stock

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$1.750

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1,600

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$1.750

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Verical

USA . 1,600 parts In-Stock

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$1.450

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$1.300

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$1.450

$1.300

Flip Electronics (Authorized)

USA . 800 parts In-Stock

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800

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Digiode

USA . 1,096 parts In-Stock

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$1.140

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Chip Stock

USA . 56,000 parts In-Stock

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Vyrian

USA . 4,172 parts In-Stock

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Flip Electronics

USA . 800 parts In-Stock

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800

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Distributors (Availability)

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Corohmni

South Africa . 129 parts In-Stock

1+ parts

$0.929

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129

$0.929

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Corphita

USA . 2,098 parts In-Stock

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$1.080

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$1.080

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Component Stockers USA

USA . 2,115 parts In-Stock

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$1.220

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$1.140

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$1.030

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2,115

$1.220

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$1.030

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Microchip USA

USA . 5,088 parts In-Stock

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$7.475

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$7.475

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,926 parts In-Stock

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Kulean Microsystems

USA . 6,166 parts In-Stock

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Problanco Electronics

Mexico . 5,870 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,495 parts In-Stock

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Continental Prestige Electronics

USA . 1,600 parts In-Stock

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$0.968

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SupplyDigital Components

Austria . 1,040 parts In-Stock

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Kepictronics

USA . 80 parts In-Stock

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Overview

Onsemi's SURB1620CTT4G diode is a game-changer in the world of ultra-fast recovery power applications. With a maximum reverse recovery time of just 0.035 us and a maximum output current of 8 A, this diode offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry known for their high-quality products, the SURB1620CTT4G is designed to meet the highest standards and deliver exceptional results. Whether you're working on automotive electronics, industrial equipment, or consumer electronics, this diode is sure to exceed your expectations. Experience the difference with the SURB1620CTT4G - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy materials provide durability and protection for the diodes, making them suitable for various applications.

Maximum Reverse Recovery Time: 0.035 us

The ultra fast reverse recovery time ensures efficient performance and quick response of the diodes.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall efficiency of the diodes.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable operation in demanding environments.

Maximum Forward Voltage (VF): 0.975 V

Low forward voltage drop ensures minimal power loss and efficient power conversion.

Maximum Output Current: 8 A

High output current capability makes these diodes suitable for high power applications.

Technical Specifications

Diodes & Rectifiers SURB1620CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.975 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURB1620CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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