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SURD8320T4G

Onsemi

SURD8320T4G by Onsemi

SURD8320T4G by Onsemi is a single rectifier diode with ultra-fast recovery power for applications requiring high efficiency. It features a max reverse recovery time of 0.035 us, max forward voltage of 0.95 V, and can handle a max output current of 3 A. Ideal for use in environments with operating temperatures ranging from -65 to 175 °C.

Median Price

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1k+

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Vyrian

USA . 6,766 parts In-Stock

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AZTECH Wire

Italy . 807 parts In-Stock

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Kulean Microsystems

USA . 8,258 parts In-Stock

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SupplyDigital Components

Austria . 6,588 parts In-Stock

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TANS Electronics

Latvia . 4,566 parts In-Stock

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RC Electronics

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A-Z Elektronik GmbH

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Kepictronics

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Problanco Electronics

Mexico . 913 parts In-Stock

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Corphita

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Corohmni

South Africa . 455 parts In-Stock

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UHIMA Technologies

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Overview

Discover the power of the SURD8320T4G by Onsemi, a top-quality diode with ultra-fast recovery power that offers unparalleled performance and reliability. Manufactured by Onsemi, a leader in the industry, this diode is perfect for a wide range of applications where precision and efficiency are essential. With a maximum forward voltage of 0.95 V and a maximum output current of 3 A, this diode provides exceptional value and benefits to customers looking for high-quality components. Upgrade your systems with the SURD8320T4G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a wide range of applications.

Config: SINGLE

Simplified configuration makes it easy to use and integrate into different electronic circuits.

Surface Mount: YES

Enables easy and compact mounting on circuit boards, saving space and facilitating assembly.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast reverse recovery time ensures efficient performance in high-speed applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Sleek rectangular shape allows for easy placement and handling in electronic designs.

No. of Terminals: 2

Simple two-terminal connection simplifies circuit design and installation.

Package Style (Meter): SMALL OUTLINE

Compact small outline package helps in space-constrained applications.

Application: ULTRA FAST RECOVERY POWER

Designed for high-speed power applications where quick recovery time is crucial.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for use in various environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides reliable electrical contact and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies installation and connectivity.

Case Connection: CATHODE

Cathode case connection provides correct orientation during installation.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for safe and efficient reflow soldering process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure solder joints for reliability.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC in various power applications.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop results in minimal power loss and efficient operation.

Maximum Output Current: 3 A

High output current rating allows for handling of substantial power levels.

Terminal Form: GULL WING

Gull wing terminal form enables easy surface mounting for robust electrical connections.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating ensures reliability and protection in various applications.

Maximum Non Repetitive Peak Forward Current: 75 A

Capable of handling high peak forward currents for transient overvoltage protection.

Diode Element Material: SILICON

Silicon diode element material offers good performance characteristics and reliability.

Technical Specifications

Diodes & Rectifiers SURD8320T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURD8320T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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