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SURD8330T4G

Onsemi

SURD8330T4G by Onsemi

SURD8330T4G by Onsemi is a single rectifier diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.05 us, max forward voltage of 1.15 V, and can handle a max output current of 3 A. Ideal for use in environments with operating temperatures ranging from -55 to 175 °C, this diode is designed for surface mount installation in various electronic systems.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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DigiKey

USA . 5,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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Vyrian

USA . 1,675 parts In-Stock

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$0.360

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Chip Stock

USA . 30,000 parts In-Stock

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USA . 5,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,226 parts In-Stock

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Bristol Electronics

USA . 1,226 parts In-Stock

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Dan-Mar Components

USA . 1,226 parts In-Stock

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Digiode

USA . 199 parts In-Stock

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Corohmni

South Africa . 280 parts In-Stock

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Component Stockers USA

USA . 591 parts In-Stock

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$99.990

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591

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,500 parts In-Stock

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Problanco Electronics

Mexico . 6,932 parts In-Stock

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SupplyDigital Components

Austria . 3,535 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,935 parts In-Stock

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Corphita

USA . 825 parts In-Stock

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Kulean Microsystems

USA . 328 parts In-Stock

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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Overview

Discover the innovative SURD8330T4G diode by Onsemi, a top-quality product designed for ultra-fast recovery power applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 300V, this rectifier diode offers unmatched reliability and performance. Manufactured by Onsemi, a trusted leader in the industry, you can trust that this diode will deliver outstanding results. Whether you're working on industrial equipment, automotive systems, or consumer electronics, the SURD8330T4G is the perfect solution for your power needs. Upgrade your projects with this cutting-edge diode and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, making it suitable for various applications.

Config: SINGLE

Simplified configuration for easy integration into circuits.

Surface Mount: YES

Allows for efficient and space-saving mounting on PCBs.

Maximum Reverse Recovery Time: 0.05 us

Ultra-fast recovery time ensures quick response in power applications.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves efficiency.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop helps in minimizing power dissipation.

Maximum Output Current: 3 A

Capable of handling high output currents for power applications.

Technical Specifications

Diodes & Rectifiers SURD8330T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURD8330T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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