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SURD8530T4G-VF01

Onsemi

SURD8530T4G-VF01 by Onsemi

SURD8530T4G-VF01 by Onsemi is a single rectifier diode with ultra-fast recovery power for applications requiring 5A output current and 300V peak reverse voltage. It has a max reverse recovery time of 0.05us, forward voltage of 1.05V, and operates b/w -65 to 175 °C. Ideal for AEC-Q101 compliant automotive electronics due to its small outline package and gull wing terminal form.

Median Price

$1.430

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,857 parts In-Stock

1+ parts

$1.430

100+ parts

$0.595

1k+ parts

$0.422

10k+ parts

-

5,857

$1.430

$0.595

$0.422

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Mouser Electronics

USA . 2,640 parts In-Stock

1+ parts

$1.430

100+ parts

$0.595

1k+ parts

$0.422

10k+ parts

$0.348

2,640

$1.430

$0.595

$0.422

$0.348

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 281 parts In-Stock

1+ parts

$0.855

100+ parts

-

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281

$0.855

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Vyrian

USA . 1,292 parts In-Stock

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$0.900

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1,292

$0.900

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Chip Stock

USA . 26,000 parts In-Stock

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26,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,161 parts In-Stock

1+ parts

$0.810

100+ parts

-

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1,161

$0.810

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Corohmni

South Africa . 68 parts In-Stock

1+ parts

$0.900

100+ parts

-

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68

$0.900

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Problanco Electronics

Mexico . 6,764 parts In-Stock

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6,764

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Kulean Microsystems

USA . 5,242 parts In-Stock

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5,242

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TANS Electronics

Latvia . 4,266 parts In-Stock

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4,266

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SupplyDigital Components

Austria . 1,004 parts In-Stock

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1,004

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UHIMA Technologies

Türkiye . 43 parts In-Stock

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43

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Overview

Experience the power of innovation with the SURD8530T4G-VF01 by Onsemi. As a leader in diodes & rectifiers, Onsemi has crafted a product that offers unparalleled quality and reliability. Ideal for ultra-fast recovery power applications, this rectifier diode boasts a maximum output current of 5A and a maximum forward voltage of 1.05V. With a compact rectangular package style and single terminal position, the SURD8530T4G-VF01 is designed for ease of use and efficiency. Trust Onsemi to deliver cutting-edge technology that exceeds expectations in performance and value. Elevate your projects with the precision and excellence of the SURD8530T4G-VF01.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the diode lightweight and durable, suitable for various applications.

Maximum Reverse Recovery Time: 0.05 us

The ultra fast reverse recovery time ensures efficient performance and fast switching speeds.

Maximum Forward Voltage (VF): 1.05 V

Low forward voltage drop helps in reducing power loss and improving overall efficiency of the diode.

Technical Specifications

Diodes & Rectifiers SURD8530T4G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURD8530T4G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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