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SURD8530T4G

Onsemi

SURD8530T4G by Onsemi

SURD8530T4G by Onsemi is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.05 us and max output current of 5 A. It operates in temperatures ranging from -65 to 175 °C and has a max repetitive peak reverse voltage of 300 V, making it suitable for various applications requiring high-speed switching capabilities.

Median Price

$0.473

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 640 parts In-Stock

1+ parts

-

100+ parts

$0.526

1k+ parts

-

10k+ parts

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640

-

$0.526

-

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Rochester

USA . 93 parts In-Stock

1+ parts

-

100+ parts

$0.419

1k+ parts

$0.348

10k+ parts

$0.310

93

-

$0.419

$0.348

$0.310

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,800 parts In-Stock

1+ parts

$0.393

100+ parts

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1,800

$0.393

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Vyrian

USA . 12,910 parts In-Stock

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12,910

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 334 parts In-Stock

1+ parts

$0.313

100+ parts

-

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334

$0.313

-

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Corphita

USA . 78 parts In-Stock

1+ parts

$0.373

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-

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78

$0.373

-

-

-

AZTECH Wire

Italy . 627 parts In-Stock

1+ parts

$19.450

100+ parts

-

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627

$19.450

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RC Electronics

USA . 10,800 parts In-Stock

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10,800

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Kepictronics

USA . 5,920 parts In-Stock

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5,920

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Kulean Microsystems

USA . 5,668 parts In-Stock

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5,668

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 2,527 parts In-Stock

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2,527

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TANS Electronics

Latvia . 2,139 parts In-Stock

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2,139

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SupplyDigital Components

Austria . 485 parts In-Stock

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485

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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465

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Continental Prestige Electronics

USA . 93 parts In-Stock

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93

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Overview

Discover the SURD8530T4G by Onsemi, a top-tier manufacturer known for its high-quality diodes and rectifiers. This product is designed for ultra-fast recovery power applications, offering customers unparalleled performance and reliability. With a maximum reverse recovery time of 0.05 us and a maximum output current of 5 A, this small outline package provides exceptional value and efficiency. Whether you're looking for a solution for automotive, industrial, or consumer electronics, the SURD8530T4G delivers the precision and speed you need. Experience the difference with Onsemi's cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the diode, ensuring durability and reliable performance.

Config: SINGLE

Simplifies the circuit design by having a single diode component.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.05 us

Enables fast switching, important for applications requiring quick response times.

Maximum Reverse Current: 5 uA

Ensures minimal power loss in the reverse direction, improving overall efficiency.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of operating conditions.

Minimum Operating Temperature: -65 °C

Suitable for use in cold environments without performance degradation.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring reliable conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers SURD8530T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SURD8530T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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