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2 Diodes & Rectifiers 2,400+

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Maximum Limiting Voltage Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Nominal Reference Voltage Nominal Regulation Current (Ireg) Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
1N4448,113 by NXP Semiconductors

1N4448,113

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

Not Qualified

CECC50001-021

100 V

.025 uA

.004 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

30

1N914B,113 by NXP Semiconductors

1N914B,113

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-35

O-LALF-W2

1

1

2

175 Cel

.075 A

GLASS

ROUND

LONG FORM

.25 W

Not Qualified

100 V

.004 us

NO

WIRE

AXIAL

BAS216,115 by NXP Semiconductors

BAS216,115

NXP Semiconductors

BAS216,115 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at up to 150°C. Ideal for applications requiring low reverse recovery time and high peak reverse voltage capabilities.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

.4 W

Not Qualified

85 V

1 uA

.004 us

Rectifier Diodes

YES

WRAP AROUND

DUAL

40

BAS216,135 by NXP Semiconductors

BAS216,135

NXP Semiconductors

BAS216,135 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, ceramic-metal sealed co-fired body material, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time and low reverse current such as power supplies and battery chargers.

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

R-CDSO-R2

4 A

1

1

2

150 Cel

.25 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.4 W

Not Qualified

85 V

1 uA

.004 us

YES

WRAP AROUND

DUAL

NOT SPECIFIED

BAT254,115 by NXP Semiconductors

BAT254,115

NXP Semiconductors

BAT254,115 by NXP Semiconductors is a Schottky rectifier diode with a max forward voltage of 0.8V and output current of 0.2A. It has a fast reverse recovery time of 0.005us, making it suitable for high-speed applications in electronics requiring low power consumption and small outline packages. The diode's peak repetitive reverse voltage is 30V, ideal for circuits where efficient energy conversion is crucial.

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-CDSO-R2

.6 A

1

1

2

125 Cel

.2 A

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.005 us

Rectifier Diodes

YES

SCHOTTKY

WRAP AROUND

DUAL

BAW62,113 by NXP Semiconductors

BAW62,113

NXP Semiconductors

The NXP Semiconductors BAW62,113 is a single rectifier diode with a max forward voltage of 1V and output current of 0.25A. It has a max reverse recovery time of 0.004us and operates at temperatures up to 200°C. This diode is commonly used in applications requiring high-speed switching and low power dissipation.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

e3

1

2 A

1

1

2

200 Cel

.25 A

GLASS

ROUND

LONG FORM

260

.35 W

Not Qualified

CECC50001-021

75 V

5 uA

.004 us

Rectifier Diodes

NO

AVALANCHE

TIN

WIRE

AXIAL

30

BY229-600,127 by NXP Semiconductors

BY229-600,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

e3

60 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

.135 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

BY229X-200,127 by NXP Semiconductors

BY229X-200,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

200 V

.135 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY229X-600,127 by NXP Semiconductors

BY229X-600,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

.135 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY229X-800,127 by NXP Semiconductors

BY229X-800,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

800 V

.135 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY329-1500S,127 by NXP Semiconductors

BY329-1500S,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.6 V

TO-220AC

R-PSFM-T2

e3

75 A

1

1

2

150 Cel

11 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.16 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

BY329X-1200,127 by NXP Semiconductors

BY329X-1200,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.85 V

R-PSFM-T2

e3

71 A

1

1

2

150 Cel

7 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1200 V

.145 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY329X-1500S,127 by NXP Semiconductors

BY329X-1500S,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.6 V

R-PSFM-T2

e3

75 A

1

1

2

150 Cel

11 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.16 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY359X-1500S,127 by NXP Semiconductors

BY359X-1500S,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.75 V

R-PSFM-T2

e3

66 A

1

1

2

150 Cel

7 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.35 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BY459X-1500,127 by NXP Semiconductors

BY459X-1500,127

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

HIGH VOLTAGE FAST SOFT RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

TO-220AC

R-PSFM-T2

e3

110 A

1

1

2

150 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

1500 V

.35 us

Rectifier Diodes

NO

TIN

THROUGH-HOLE

SINGLE

BYD17D,115 by NXP Semiconductors

BYD17D,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

225 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

200 V

1 uA

3 us

200 V

YES

AVALANCHE

WRAP AROUND

END

BYD17G,115 by NXP Semiconductors

BYD17G,115

NXP Semiconductors

BYD17G,115 by NXP Semiconductors is a single rectifier diode with a max reverse recovery time of 3 us and a max reverse current of 1 uA. It has a package shape of round and can handle a max reverse test voltage of 400 V. This diode is suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

450 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

400 V

1 uA

3 us

400 V

YES

AVALANCHE

WRAP AROUND

END

BYD17J,115 by NXP Semiconductors

BYD17J,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

GENERAL PURPOSE

650 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.05 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

600 V

1 uA

3 us

600 V

YES

AVALANCHE

WRAP AROUND

END

BYD17K,135 by NXP Semiconductors

BYD17K,135

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

800 V

3 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD37M,115 by NXP Semiconductors

BYD37M,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

FAST SOFT RECOVERY

1100 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-LELF-R2

20 A

1

1

2

175 Cel

-65 Cel

.6 A

GLASS

ROUND

LONG FORM

Not Qualified

IEC-134

1000 V

1 uA

.3 us

1000 V

YES

AVALANCHE

WRAP AROUND

END

BYD77B,115 by NXP Semiconductors

BYD77B,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

100 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

BYD77D,115 by NXP Semiconductors

BYD77D,115

NXP Semiconductors

BYD77D,115 by NXP Semiconductors is a single rectifier diode with a max output current of 0.85A and a max repetitive peak reverse voltage of 200V. It has a fast max reverse recovery time of 0.025us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's technology is avalanche-based, ensuring efficient performance even at an operating temperature of up to 175°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

.85 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.025 us

YES

AVALANCHE

WRAP AROUND

END

NOT SPECIFIED

PRLL4001,115 by NXP Semiconductors

PRLL4001,115

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LOW LEAKAGE CURRENT

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

175 Cel

-65 Cel

.68 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

CSD10060G by Wolfspeed

CSD10060G

Wolfspeed

CSD10060G by Wolfspeed is a Schottky rectifier diode with 600V reverse voltage and 16.5A output current. It features a max forward voltage of 1.8V and operates at temperatures up to 175°C. Ideal for applications requiring high efficiency, this diode has a gull wing terminal form and plastic/epoxy package body material.

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-263AB

R-PSSO-G2

250 A

1

1

2

175 Cel

16.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

600 V

Rectifier Diodes

YES

SCHOTTKY

GULL WING

SINGLE

NOT SPECIFIED

C3D10060A by Wolfspeed

C3D10060A

Wolfspeed

The Wolfspeed C3D10060A is a Schottky rectifier diode with 600V reverse voltage, 10A output current, and 1.8V forward voltage. It is used for efficiency applications in temperatures ranging from -55°C to 175°C. The diode features a single terminal position with matte tin finish and through-hole technology.

EFFICIENCY

CATHODE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.8 V

TO-220AC

R-PSFM-T2

e3

71 A

1

1

2

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

NTSB40200CTG by Onsemi

NTSB40200CTG

Onsemi

NTSB40200CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -55 to 150 °C, has a max reverse voltage of 200V, and is ideal for efficiency applications.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.45 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

SINGLE

30

NTSB40200CTT4G by Onsemi

NTSB40200CTT4G

Onsemi

NTSB40200CTT4G by Onsemi is a Schottky rectifier diode with 200V max reverse voltage and 20A output current. It has common cathode configuration, small outline package style, and operates b/w -55 to 150 °C. Ideal for efficiency applications, it features a max forward voltage of 1.45V and matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.45 V

R-PSSO-G2

e3

1

250 A

2

1

2

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SJPW-T4 by Sanken Electric

SJPW-T4

Sanken Electric

Sanken Electric's SJPW-T4 is a Schottky rectifier diode with max output current of 5A and max forward voltage of 0.55V. It operates b/w -40 to 150°C, ideal for efficiency applications due to its low VF and high peak reverse voltage of 40V. Suitable for surface mount with plastic/epoxy body material in small outline package style.

HIGH RELIABILITY

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.55 V

R-PDSO-C2

80 A

1

1

2

150 Cel

-40 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

40 V

500 uA

YES

SCHOTTKY

C BEND

DUAL

NOT SPECIFIED

VS-20ETF12STRL-M3 by Vishay Intertechnology

VS-20ETF12STRL-M3

Vishay Intertechnology

VS-20ETF12STRL-M3 by Vishay Intertechnology is a fast soft recovery rectifier diode with 1200V peak reverse voltage and 20A output current. It has a max reverse recovery time of 0.4us and operates b/w -40 to 150°C. Ideal for applications requiring high-speed switching and low forward voltage drop in compact electronic devices.

FREE WHEELING DIODE

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.31 V

TO-263AB

R-PSSO-G2

e3

1

355 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

1200 V

100 uA

.4 us

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VS-20ETF12STRR-M3 by Vishay Intertechnology

VS-20ETF12STRR-M3

Vishay Intertechnology

VS-20ETF12STRR-M3 by Vishay Intertechnology is a single diode with fast soft recovery. It has a max reverse recovery time of 0.4 us and can handle a max output current of 20 A. Ideal for applications requiring high-speed rectification, it operates b/w -40 to 150 °C and features a peak reflow temperature of 245 C.

FREE WHEELING DIODE

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.31 V

TO-263AB

R-PSSO-G2

e3

1

355 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

1200 V

100 uA

.4 us

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VS-20ETS08STRR-M3 by Vishay Intertechnology

VS-20ETS08STRR-M3

Vishay Intertechnology

VS-20ETS08STRR-M3 by Vishay Intertechnology is a single rectifier diode with 800V peak reverse voltage and 20A output current. It operates in high voltage applications, has a max forward voltage of 1.1V, and can withstand temperatures from -40 to 150°C. Ideal for surface mount installations due to its small outline package style.

HIGH VOLTAGE

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

TO-263AB

R-PSSO-G2

e3

1

300 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

800 V

100 uA

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

VS-20ETS12STRR-M3 by Vishay Intertechnology

VS-20ETS12STRR-M3

Vishay Intertechnology

VS-20ETS12STRR-M3 by Vishay Intertechnology is a single rectifier diode with 1200V peak reverse voltage and 20A output current. It operates in temperatures from -40 to 150°C, making it suitable for high voltage applications. The diode has a matte tin finish, gull wing terminals, and is surface mountable in a small outline package.

HIGH VOLTAGE

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

TO-263AB

R-PSSO-G2

e3

1

300 A

1

1

2

150 Cel

-40 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

1200 V

100 uA

YES

Matte Tin (Sn)

GULL WING

SINGLE

30

DSK10C-ET1 by Onsemi

DSK10C-ET1

Onsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PALF-W2

e3

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

200 V

NO

Tin (Sn)

WIRE

AXIAL

DSK10E-ET1 by Onsemi

DSK10E-ET1

Onsemi

DSK10E-ET1 by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 400V. It comes in an axial package style made of plastic/epoxy, suitable for applications requiring isolated case connection and operating temperatures up to 150 °C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PALF-W2

e3

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

400 V

NO

Tin (Sn)

WIRE

AXIAL

VSSA210HM3/61T by Vishay Intertechnology

VSSA210HM3/61T

Vishay Intertechnology

Vishay Intertechnology's VSSA210HM3/61T is a Schottky rectifier diode with 100V peak reverse voltage, 1.7A output current, and 0.7V forward voltage. It operates b/w -40 to 150°C, ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance and small outline package.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AC

R-PDSO-C2

60 A

1

1

2

150 Cel

-40 Cel

1.7 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

150 uA

YES

SCHOTTKY

C BEND

DUAL

SD103AWS-HG3-18 by Vishay Intertechnology

SD103AWS-HG3-18

Vishay Intertechnology

SD103AWS-HG3-18 by Vishay Intertechnology is a Schottky rectifier diode with a max output current of 0.35A and max repetitive peak reverse voltage of 40V. It operates in temperatures ranging from -55°C to 125°C, making it suitable for automotive applications meeting AEC-Q101 standards. This single-configured diode is surface mountable and has a fast reverse recovery time of 0.01 us.

UNSPECIFIED

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-G2

2 A

1

1

2

125 Cel

-55 Cel

.35 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.2 W

AEC-Q101

40 V

.01 us

YES

SCHOTTKY

GULL WING

DUAL

NOT SPECIFIED

VS-6TQ045SPBF by Vishay Intertechnology

VS-6TQ045SPBF

Vishay Intertechnology

VS-6TQ045SPBF by Vishay Intertechnology is a Schottky rectifier diode with 45V reverse voltage, 6A output current, and 0.53V forward voltage. Ideal for applications requiring high efficiency and fast switching such as power supplies, converters, and battery chargers.

FREE WHEELING DIODE, HIGH RELIABILITY

GENERAL PURPOSE

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.53 V

R-PSSO-G2

e3

1

690 A

1

1

2

175 Cel

-55 Cel

6 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

45 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN OVER NICKEL

GULL WING

SINGLE

STTH10R04B-TR by STMicroelectronics

STTH10R04B-TR

STMicroelectronics

STTH10R04B-TR by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and can handle up to 10 A output current. It operates at a peak reverse voltage of 400 V and features a compact surface mount design. Ideal for high-efficiency applications, it withstands temperatures up to 175 °C.

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

R-PSSO-G2

100 A

1

1

2

175 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

400 V

.04 us

Rectifier Diodes

YES

GULL WING

SINGLE

NOT SPECIFIED

STTH10R04B by STMicroelectronics

STTH10R04B

STMicroelectronics

STTH10R04B by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and supports up to 10 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications, it ensures reliable performance in demanding environments.

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

R-PSSO-G2

100 A

1

1

2

175 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

400 V

.04 us

Rectifier Diodes

YES

GULL WING

SINGLE

NOT SPECIFIED

STTH10R04D by STMicroelectronics

STTH10R04D

STMicroelectronics

STTH10R04D by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and can handle up to 10 A output current. It operates at a max temp of 175 °C and supports peak reverse voltage of 400 V. Ideal for high-efficiency applications, it features a flange mount design.

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

TO-220AC

R-PSFM-T2

100 A

1

1

2

175 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

400 V

.04 us

Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

STTH10R04FP by STMicroelectronics

STTH10R04FP

STMicroelectronics

STTH10R04FP by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and can handle up to 10 A output current. It operates at a max temp of 175 °C and features a 400 V peak reverse voltage. Ideal for high-efficiency applications, it comes in a flange mount package.

ULTRA FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

TO-220AC

R-PSFM-T2

100 A

1

1

2

175 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

400 V

.04 us

Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

STTH10R04G by STMicroelectronics

STTH10R04G

STMicroelectronics

STTH10R04G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and supports up to 10 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications, it ensures reliable performance in demanding environments.

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

R-PSSO-G2

100 A

1

1

2

175 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

400 V

.04 us

Rectifier Diodes

YES

GULL WING

SINGLE

NOT SPECIFIED

STTH20R04FP by STMicroelectronics

STTH20R04FP

STMicroelectronics

STTH20R04FP by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.045 µs and supports up to 20 A output current. It operates at a peak reverse voltage of 400 V and withstands temperatures up to 175 °C. Ideal for high-efficiency applications, it features a flange mount design for easy integration.

ULTRA FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

TO-220AC

R-PSFM-T2

e3

1

150 A

1

1

2

175 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

225

Not Qualified

400 V

.045 us

Rectifier Diodes

NO

MATTE TIN

THROUGH-HOLE

SINGLE

STTH20R04G by STMicroelectronics

STTH20R04G

STMicroelectronics

STTH20R04G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.045 µs and supports up to 20 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications, it ensures reliable performance in demanding environments.

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

R-PSSO-G2

e3

1

150 A

1

1

2

175 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

400 V

.045 us

Rectifier Diodes

YES

MATTE TIN

GULL WING

SINGLE

STTH20R04W by STMicroelectronics

STTH20R04W

STMicroelectronics

STTH20R04W by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.045 µs and supports up to 20 A output current. It operates at a max temp of 175 °C and features a flange mount design for easy integration. Ideal for high-efficiency applications requiring rapid switching.

ULTRA FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.35 V

TO-247

R-PSFM-T2

150 A

1

1

2

175 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

400 V

.045 us

Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

STTH8S06FP by STMicroelectronics

STTH8S06FP

STMicroelectronics

STTH8S06FP by STMicroelectronics is a single rectifier diode with 600V reverse voltage, 8A output current, and 0.018us reverse recovery time. It is designed for ultra-fast recovery applications at up to 175°C operating temperature.

ULTRA FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.9 V

TO-220AC

R-PSFM-T2

60 A

1

1

2

175 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

600 V

.018 us

Rectifier Diodes

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

1N5402GP-AP by Micro Commercial Components

1N5402GP-AP

Micro Commercial Components

1N5402GP-AP by Micro Commercial Components is a single rectifier diode with 200V peak reverse voltage and 3A output current. It has a max forward voltage of 1.1V and operates at temperatures up to 150°C. Ideal for applications requiring high efficiency and low power loss in electronic circuits.

LOW LEAKAGE CURRENT

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

1

200 A

1

1

2

150 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

200 V

5 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

10

STPSC1206D by STMicroelectronics

STPSC1206D

STMicroelectronics

STPSC1206D by STMicroelectronics is a single Schottky rectifier diode with a max forward voltage of 1.7V and max output current of 12A. It is used in applications requiring high power and low voltage drop, such as power supplies and battery chargers.

GENERAL PURPOSE

SINGLE

SILICON CARBIDE

RECTIFIER DIODE

1.7 V

TO-220AC

R-PSFM-T2

e3

1

200 A

1

1

2

-40 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

Not Qualified

600 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE