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STTH20R04G

STMicroelectronics

STTH20R04G by STMicroelectronics

STTH20R04G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.045 µs and supports up to 20 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,857 parts In-Stock

1+ parts

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4,857

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Digiode

USA . 4,814 parts In-Stock

1+ parts

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4,814

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Anansix

USA . 1,195 parts In-Stock

1+ parts

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1,195

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Cogito LLC

Ukraine . 13 parts In-Stock

1+ parts

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13

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,040 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

$0.117

10k+ parts

-

2,040

$0.130

-

$0.117

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MKK Technologies

India . 993 parts In-Stock

1+ parts

$0.244

100+ parts

-

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-

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993

$0.244

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-

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DigiPath Technology Company

USA . 993 parts In-Stock

1+ parts

$0.244

100+ parts

-

1k+ parts

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993

$0.244

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AZTECH Wire

Italy . 700 parts In-Stock

1+ parts

$18.460

100+ parts

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700

$18.460

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Corphita

USA . 2,567 parts In-Stock

1+ parts

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2,567

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Parana Technologies

USA . 1,597 parts In-Stock

1+ parts

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100+ parts

$0.155

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1,597

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$0.155

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Overview

Unlock unparalleled performance with the STTH20R04G from STMicroelectronics, a leader in innovation and quality. This ultra-fast recovery rectifier diode is designed for efficiency, ensuring superior reliability in high-demand applications. With a robust tolerance to extreme temperatures and remarkable current handling capabilities, it delivers exceptional value that enhances your designs. Trust in STMicroelectronics’ legacy of excellence to elevate your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and protection for the diode, making it suitable for use in a variety of environments.

Config: SINGLE

A single configuration allows for a compact design, making it easy to integrate into various electronic applications.

Surface Mount: YES

Surface mount capability enables easier and more efficient assembly in automated processes, saving time and reducing costs.

Maximum Reverse Recovery Time: 0.045 µs

The ultra-fast recovery time ensures minimal delay during switching, improving the overall performance in high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape is optimized for space efficiency on PCBs, facilitating more compact designs.

No. of Terminals: 2

Two terminals simplify the connection process while maintaining a reliable electrical connection.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density mounting on circuit boards, making it ideal for space-constrained applications.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is perfect for applications that require quick response times to minimize losses.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature increases the versatility of this diode, allowing it to be used in demanding conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability, ensuring reliable joints during the assembly process.

Terminal Position: SINGLE

A single terminal position streamlines the design process and simplifies layout planning on PCB.

Case Connection: CATHODE

The cathode connection simplifies integration into circuits, making it easy to identify and connect the diode correctly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed to efficiently convert AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 1.35 V

A low forward voltage drop minimizes power loss and heat generation, enhancing the overall efficiency of the circuit.

Maximum Output Current: 20 A

With a high maximum output current, this diode can handle significant load requirements, making it suitable for high-power applications.

Terminal Form: GULL WING

The gull wing terminal form provides robust physical connection and facilitates easy soldering on PCBs.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage capability makes this diode suitable for a wide range of applications, including high-voltage circuits.

Maximum Non-Repetitive Peak Forward Current: 150 A

The ability to handle high non-repetitive currents ensures robust performance in surge scenarios, enhancing product reliability.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics and thermal stability.

Technical Specifications

Diodes & Rectifiers STTH20R04G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.35 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.045 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH20R04G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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