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NTSB40200CTG

Onsemi

NTSB40200CTG by Onsemi

NTSB40200CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -55 to 150 °C, has a max reverse voltage of 200V, and is ideal for efficiency applications.

Median Price

$1.430

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,643 parts In-Stock

1+ parts

-

100+ parts

$1.430

1k+ parts

$1.190

10k+ parts

$1.060

10,643

-

$1.430

$1.190

$1.060

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 880 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

-

880

$1.112

-

-

-

Sensible Micro Corp

USA . 54,024 parts In-Stock

1+ parts

-

100+ parts

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54,024

-

-

-

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Flip Electronics

USA . 17,750 parts In-Stock

1+ parts

-

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17,750

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-

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Vyrian

USA . 4,383 parts In-Stock

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-

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1k+ parts

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4,383

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 962 parts In-Stock

1+ parts

$1.053

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$1.053

-

-

-

Corohmni

South Africa . 399 parts In-Stock

1+ parts

$1.170

100+ parts

-

1k+ parts

-

10k+ parts

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399

$1.170

-

-

-

AZTECH Wire

Italy . 799 parts In-Stock

1+ parts

$21.880

100+ parts

-

1k+ parts

-

10k+ parts

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799

$21.880

-

-

-

Perfect Parts

USA . 32,323 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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32,323

-

-

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Problanco Electronics

Mexico . 6,880 parts In-Stock

1+ parts

-

100+ parts

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6,880

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-

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SupplyDigital Components

Austria . 6,498 parts In-Stock

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6,498

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TANS Electronics

Latvia . 4,618 parts In-Stock

1+ parts

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100+ parts

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4,618

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UHIMA Technologies

Türkiye . 565 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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565

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Kulean Microsystems

USA . 190 parts In-Stock

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100+ parts

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190

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Overview

Discover the NTSB40200CTG by Onsemi, a high-quality diode and rectifier that offers unparalleled efficiency in various applications. With a common cathode configuration and two elements, this product is designed for maximum performance and reliability. Its small outline package shape and matte tin terminal finish make it ideal for surface mount applications. Experience the benefits of superior technology with a maximum output current of 20A and a maximum repetitive peak reverse voltage of 200V. Trust Onsemi for cutting-edge solutions that deliver value and innovation to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration simplifies circuit design and 2 elements provide flexibility in system integration.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort in production.

Maximum Reverse Current: 100 uA

Low reverse current ensures efficient operation and minimal power losses.

Package Shape: RECTANGULAR

Rectangular shape allows for space-saving and efficient placement on the PCB.

No. of Terminals: 2

Simplified 2-terminal design for easy installation and connectivity in circuits.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB and improves overall system efficiency.

Application: EFFICIENCY

Designed for efficiency applications, ensuring optimal performance and energy savings.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environments.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, ideal for high efficiency applications.

Technical Specifications

Diodes & Rectifiers NTSB40200CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.45 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

100 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTSB40200CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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