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STTH10R04D

STMicroelectronics

STTH10R04D by STMicroelectronics

STTH10R04D by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and can handle up to 10 A output current. It operates at a max temp of 175 °C and supports peak reverse voltage of 400 V. Ideal for high-efficiency applications, it features a flange mount design.

Median Price

$1.850

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 98 parts In-Stock

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$1.850

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98

$1.850

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Distributors (In-Stock)

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Digiode

USA . 3,344 parts In-Stock

1+ parts

$1.501

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3,344

$1.501

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Vyrian

USA . 4,279 parts In-Stock

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4,279

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Anansix

USA . 1,659 parts In-Stock

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1,659

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.025

100+ parts

$0.023

1k+ parts

$0.020

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-

200

$0.025

$0.023

$0.020

-

IDEA Electronic Components Group

UK . 1,826 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

$0.093

10k+ parts

-

1,826

$0.103

-

$0.093

-

MKK Technologies

India . 900 parts In-Stock

1+ parts

$0.194

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900

$0.194

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DigiPath Technology Company

USA . 900 parts In-Stock

1+ parts

$0.194

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900

$0.194

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Corphita

USA . 1,368 parts In-Stock

1+ parts

$1.422

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1,368

$1.422

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Microchip USA

USA . 358 parts In-Stock

1+ parts

$10.140

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358

$10.140

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Component Stockers USA

USA . 664 parts In-Stock

1+ parts

$99.990

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664

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 12,824 parts In-Stock

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12,824

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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A-Z Elektronik GmbH

Germany . 1,350 parts In-Stock

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1,350

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Parana Technologies

USA . 846 parts In-Stock

1+ parts

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$0.123

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846

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$0.123

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Perfect Parts

USA . 511 parts In-Stock

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511

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Overview

Unlock superior performance with the STTH10R04D from STMicroelectronics, a leader in innovative semiconductor solutions. This ultra-fast recovery rectifier diode is engineered for reliability and efficiency, making it ideal for demanding applications in power supplies, motor drives, and renewable energy systems. With robust temperature handling and impressive current capabilities, it ensures your designs thrive under pressure, delivering exceptional value and peace of mind. Elevate your projects with ST's commitment to quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection against environmental factors, ensuring durability in various applications.

Config: SINGLE

A single configuration allows for simplified design and integration into circuits, making it easier to implement in various electronic applications.

Maximum Reverse Recovery Time: 0.04 us

The ultra-fast recovery time reduces switching losses, making this diode ideal for high-frequency applications and enhancing overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on PCBs, allowing for denser and more compact circuit designs.

No. of Terminals: 2

The simple two-terminal design is straightforward to integrate within circuits, minimizing complexity and potential errors during installation.

Package Style: FLANGE MOUNT

Flange mounting provides stable and secure installation, helping to ensure reliable performance under varying conditions, such as high vibrations.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is particularly suited for applications such as switch-mode power supplies and motor controllers, ensuring efficient operation.

Maximum Operating Temperature: 175 °C

High operating temperature capability enhances reliability and performance in demanding environments, making it suitable for automotive and industrial applications.

Terminal Position: SINGLE

Single terminal positioning simplifies layout design for PCB manufacturing, contributing to overall ease of use.

Case Connection: CATHODE

Cathode connection is standard for rectifier diodes, ensuring compatibility with most circuit designs focused on efficiency and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), essential for various electronic devices and power supply units.

Maximum Forward Voltage (VF): 1.35 V

With a low forward voltage drop, this diode reduces energy loss during operation, improving overall efficiency in power applications.

Maximum Output Current: 10 A

An output current of 10 A makes this diode capable of handling significant loads, suitable for high-power applications and enhancing circuit performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical strength and are easier to handle for prototyping and soldering, making it an excellent choice for both professionals and hobbyists.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high reverse voltage rating allows this diode to be used in applications with substantial voltage fluctuations, ensuring reliability and safety.

Maximum Non Repetitive Peak Forward Current: 100 A

The capability to handle high non-repetitive current surges enhances its protective capability in circuits exposed to sudden spikes, improving overall safety.

Diode Element Material: SILICON

Silicon, as a semiconductor material, provides efficient performance and temperature stability, ensuring longevity and reliability in diverse electronic applications.

Technical Specifications

Diodes & Rectifiers STTH10R04D attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.35 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.04 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH10R04D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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