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STTH10R04G

STMicroelectronics

STTH10R04G by STMicroelectronics

STTH10R04G by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.04 µs and supports up to 10 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 14,470 parts In-Stock

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14,470

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Vyrian

USA . 11,548 parts In-Stock

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11,548

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Digiode

USA . 4,994 parts In-Stock

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4,994

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Anansix

USA . 1,553 parts In-Stock

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1,553

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,120 parts In-Stock

1+ parts

$0.089

100+ parts

-

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$0.080

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1,120

$0.089

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$0.080

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MKK Technologies

India . 868 parts In-Stock

1+ parts

$0.168

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868

$0.168

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DigiPath Technology Company

USA . 868 parts In-Stock

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$0.168

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868

$0.168

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AZTECH Wire

Italy . 175 parts In-Stock

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$8.300

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175

$8.300

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QUARKTWIN TECHNOLOGY LTD

USA . 2,787 parts In-Stock

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2,787

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Parana Technologies

USA . 2,235 parts In-Stock

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$0.107

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2,235

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$0.107

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Corphita

USA . 1,855 parts In-Stock

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1,855

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Overview

Unlock exceptional performance with the STTH10R04G from STMicroelectronics—a leader in innovative semiconductor solutions. This ultra-fast recovery rectifier diode is designed for demanding applications, delivering reliability and efficiency where you need it most. With its compact surface-mount design and impressive thermal capabilities, it ensures optimal operation even in challenging environments. Trust STMicroelectronics to power your projects with quality and precision, enhancing your designs and boosting your productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to moisture, making the diode reliable in various environments.

Config: SINGLE

A single configuration simplifies design and integration into circuits while ensuring effective performance.

Surface Mount: YES

Surface mount technology allows for compact design and ease of assembly on printed circuit boards (PCBs).

Maximum Reverse Recovery Time: 0.04 us

A low reverse recovery time enhances efficiency in switching applications, reducing power losses and improving overall performance.

Package Shape: RECTANGULAR

The rectangular shape provides effective space utilization on PCB and optimal thermal performance.

No. of Terminals: 2

Two terminals ensure straightforward connections and minimal complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package is suitable for space-constrained applications and enhances thermal management.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is ideal for high-speed switching applications, leading to better efficiency.

Maximum Operating Temperature: 175 °C

A high operating temperature rating allows the diode to perform reliably in demanding applications and harsh environments.

Terminal Position: SINGLE

A single terminal position simplifies the layout and design of the PCB, easing the assembly process.

Case Connection: CATHODE

The cathode connection ensures proper orientation in circuits, reducing the risk of installation errors.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is perfect for converting AC to DC, a common requirement in power applications.

Maximum Forward Voltage (VF): 1.35 V

A maximum forward voltage of 1.35 V allows for lower voltage drop during operation, contributing to improved power efficiency.

Maximum Output Current: 10 A

With a maximum output current of 10 A, this diode can handle substantial loads, making it suitable for various applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy mounting and soldering, which enhances assembly efficiency.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high peak reverse voltage rating increases application versatility, supporting usage in higher voltage circuits.

Maximum Non-Repetitive Peak Forward Current: 100 A

The ability to withstand high non-repetitive forward currents makes this diode suitable for transient conditions.

Diode Element Material: SILICON

Silicon as a material choice ensures good thermal stability and performance under varied conditions, enhancing reliability.

Technical Specifications

Diodes & Rectifiers STTH10R04G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.35 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.04 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH10R04G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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