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STTH20R04W

STMicroelectronics

STTH20R04W by STMicroelectronics

STTH20R04W by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.045 µs and supports up to 20 A output current. It operates at a max temp of 175 °C and features a flange mount design for easy integration. Ideal for high-efficiency applications requiring rapid switching.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,797 parts In-Stock

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5,797

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Anansix

USA . 1,966 parts In-Stock

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1,966

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Digiode

USA . 438 parts In-Stock

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438

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,093 parts In-Stock

1+ parts

$0.132

100+ parts

-

1k+ parts

$0.119

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1,093

$0.132

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$0.119

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MKK Technologies

India . 1,177 parts In-Stock

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$0.249

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1,177

$0.249

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DigiPath Technology Company

USA . 1,177 parts In-Stock

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$0.249

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1,177

$0.249

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AZTECH Wire

Italy . 382 parts In-Stock

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$18.570

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382

$18.570

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Component Stockers USA

USA . 505 parts In-Stock

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$99.990

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505

$99.990

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A-Z Elektronik GmbH

Germany . 7,482 parts In-Stock

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Parana Technologies

USA . 1,489 parts In-Stock

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$0.158

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1,489

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$0.158

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Corphita

USA . 598 parts In-Stock

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598

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Perfect Parts

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Overview

Unlock unmatched efficiency with the STTH20R04W diode from STMicroelectronics, a leader in cutting-edge semiconductor solutions. Designed for ultra-fast recovery, this high-performance rectifier ensures reliable operation even in demanding environments, delivering up to 20A of output current. Benefit from superior thermal performance and robust construction, perfect for power supplies, motor drives, and renewable energy systems. Elevate your applications with ST’s commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and durability, making the diode reliable in various applications.

Config: SINGLE

A single configuration indicates simplicity in design and ease of integration into circuits.

Maximum Reverse Recovery Time: 0.045 us

This ultra-fast recovery time makes the diode suitable for high-frequency applications, reducing energy losses.

Package Shape: RECTANGULAR

The rectangular shape optimizes space efficiency, allowing for easier placement on PCBs.

No. of Terminals: 2

A two-terminal design ensures straightforward connections, simplifying the assembly process.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides secure installation and enhances heat dissipation, improving reliability.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is ideal for applications that demand rapid switching, such as in power supplies.

Maximum Operating Temperature: 175 °C

The high operational temperature rating indicates robustness, making it suitable for demanding environments.

Terminal Position: SINGLE

A single terminal position simplifies layout design on circuit boards, improving overall manufacturability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power conversion applications.

Maximum Forward Voltage (VF): 1.35 V

The relatively low forward voltage drop enhances overall system efficiency by minimizing power loss during operation.

Maximum Output Current: 20 A

With a high output current capability, this diode can handle substantial loads, making it suitable for heavy-duty applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure a secure physical connection and are widely compatible with various PCB designs.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high reverse voltage rating makes this diode suitable for applications involving significant voltage swings.

Maximum Non-Repetitive Peak Forward Current: 150 A

This capability allows the diode to endure brief overcurrent conditions, enhancing safety in operational scenarios.

Diode Element Material: SILICON

Silicon is commonly used in diode manufacturing owing to its effective electrical properties, ensuring dependable performance.

Technical Specifications

Diodes & Rectifiers STTH20R04W attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

ULTRA FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.35 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.045 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STTH20R04W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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