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UC5608DWPTR

Texas Instruments

UC5608DWPTR by Texas Instruments

UC5608DWPTR by Texas Instruments is a SCSI bus terminator with 18 signal lines and 110 ohm pull-up resistance. Operating at 0-70°C, it has a supply voltage range of 4-5.25 V. This small outline package is ideal for commercial temperature grade applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,152 parts In-Stock

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Resion

USA . 2,575 parts In-Stock

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ECAB

Sweden . 1,675 parts In-Stock

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A&K Electronics

USA . 640 parts In-Stock

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640

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Rotakorn

Sweden . 640 parts In-Stock

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640

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Bristol Electronics

USA . 640 parts In-Stock

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640

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Digiode

USA . 299 parts In-Stock

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299

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LIBRA Elektronik GmbH

Germany . 160 parts In-Stock

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R&J Components

USA . 106 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 811 parts In-Stock

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$3.585

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$4.104

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811

$3.585

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DigiPath Technology Company

USA . 1,564 parts In-Stock

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$3.947

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$3.632

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IDEA Electronic Components Group

UK . 1,209 parts In-Stock

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$4.028

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$3.625

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ChromeModa Solutions

Germany . 760 parts In-Stock

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$4.028

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$3.303

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760

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AZTECH Wire

Italy . 558 parts In-Stock

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$18.293

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One Stop Electronics

USA . 251 parts In-Stock

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$42.500

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Corphita

USA . 1,628 parts In-Stock

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Overview

Enhance your data bus systems with the UC5608DWPTR by Texas Instruments, a top-notch manufacturer known for delivering high-quality products. As a leading player in the data bus terminator category, this device offers unmatched reliability and performance. Ideal for SCSI applications, this compact and efficient solution ensures seamless communication and optimal signal integrity. Upgrade your systems today and experience the value and benefits that only Texas Instruments can provide. Boost your efficiency and productivity with the UC5608DWPTR!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for improved product longevity and ease of handling.

Surface Mount: YES

Saves space on the circuit board and makes installation easier.

Maximum Supply Voltage: 5.25 V

Provides a wide range of voltage tolerance for flexibility in different applications.

Package Shape: RECTANGULAR

Convenient shape for easy placement and mounting on the circuit board.

No. of Terminals: 28

Sufficient number of terminals for connecting multiple components in the circuit.

Nominal Pull Up Resistance: 110 ohm

Optimal resistance value for reliable signal transmission and noise reduction.

Technology: BIPOLAR

Bipolar technology offers high-speed performance and accuracy in signal processing.

No. of Signal Lines: 18

Adequate number of signal lines for efficient data transmission and communication.

Technical Specifications

Data Bus Terminators UC5608DWPTR attributes and parameters. Explore more Data Bus Terminators devices from Texas Instruments

Specs

Differential Output:

NO

Interface IC Type:

JESD-30 Code:

R-PDSO-G28

Length:

17.9 mm

No. of Functions:

1

No. of Signal Lines:

18

No. of Terminals:

28

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Nominal Pull Up Resistance:

110 ohm

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Bus Terminators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

4.75 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

UC5608DWPTR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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