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UC2710TG3

Texas Instruments

UC2710TG3 by Texas Instruments

UC2710TG3 by Texas Instruments is a MOSFET gate driver with 15V power supplies, 18V max supply voltage, and 0.07us turn-on time. Ideal for industrial applications requiring high-speed switching and precise control of bipolar technology-based devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,152 parts In-Stock

1+ parts

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7,152

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Digiode

USA . 3,967 parts In-Stock

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3,967

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 330 parts In-Stock

1+ parts

$10.489

100+ parts

-

1k+ parts

$11.000

10k+ parts

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330

$10.489

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$11.000

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DigiPath Technology Company

USA . 1,300 parts In-Stock

1+ parts

$11.549

100+ parts

-

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1,300

$11.549

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ChromeModa Solutions

Germany . 3,140 parts In-Stock

1+ parts

$11.785

100+ parts

$9.664

1k+ parts

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10k+ parts

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3,140

$11.785

$9.664

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IDEA Electronic Components Group

UK . 2,300 parts In-Stock

1+ parts

$11.785

100+ parts

$11.196

1k+ parts

$10.606

10k+ parts

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2,300

$11.785

$11.196

$10.606

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AZTECH Wire

Italy . 316 parts In-Stock

1+ parts

$15.488

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316

$15.488

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Ampacity Inc.

Singapore . 1,640 parts In-Stock

1+ parts

$32.500

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1,640

$32.500

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One Stop Electronics

USA . 1,451 parts In-Stock

1+ parts

$33.500

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1,451

$33.500

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Microchip USA

USA . 5,274 parts In-Stock

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5,274

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Corphita

USA . 4,380 parts In-Stock

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4,380

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Overview

Enhance the performance and efficiency of your electronic designs with the UC2710TG3 MOSFET Gate Driver by Texas Instruments. Known for their superior quality and reliability, Texas Instruments products are trusted by professionals worldwide. This gate driver is ideal for a wide range of applications, offering a maximum supply voltage of 18V and a nominal output peak current limit of 6A. With a fast turn-on time of 0.07us and a compact rectangular package design, this innovative product delivers exceptional value and benefits to customers looking to optimize their systems. Elevate your projects with the UC2710TG3 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the MOSFET gate driver easy to handle and long-lasting.

Maximum Supply Voltage: 18 V

This high maximum supply voltage allows for flexibility in various applications, ensuring compatibility with different power sources.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration and installation in electronic circuits.

Power Supplies (V): 15

This power supply voltage ensures reliable and stable operation of the MOSFET gate driver.

No. of Terminals: 5

Having multiple terminals allows for versatile connection options and compatibility with different systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mounting and stability in electronic assemblies.

Minimum Supply Voltage: 4.7 V

The low minimum supply voltage ensures efficient operation and power management of the MOSFET gate driver.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this MOSFET gate driver can withstand harsh environmental conditions without overheating.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in extreme cold temperatures.

Terminal Finish: MATTE TIN

The matte tin finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring of the MOSFET gate driver.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this MOSFET gate driver is built to withstand tough operating conditions in industrial settings.

Technology: BIPOLAR

The bipolar technology used in this gate driver ensures high-performance and efficiency in driving MOSFETs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure mounting and easy soldering onto circuit boards.

Nominal Supply Voltage: 15 V

The nominal supply voltage of 15V ensures compatibility and stable operation with various power sources.

Turn-on Time: 0.07 us

The fast turn-on time of 0.07 microseconds allows for quick and responsive switching of the MOSFETs.

Terminal Pitch: 1.7 mm

The small terminal pitch of 1.7mm allows for compact and space-saving design in electronic assemblies.

Nominal Output Peak Current Limit: 6 A

With a peak current limit of 6A, this MOSFET gate driver can handle high current loads without overheating or malfunctioning.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter-based interface IC type provides flexibility in driving and controlling MOSFETs, allowing for customized performance and operation.

Turn-off Time: 0.08 us

The fast turn-off time of 0.08 microseconds ensures efficient switching and control of the MOSFETs, reducing heat dissipation and power loss.

Technical Specifications

MOSFET Gate Drivers UC2710TG3 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PSFM-T5

JESD-609 Code:

e3

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Equivalence Code:

SIP5,.1,67TB

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Power Supplies (V):

15

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

4.7 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.7 mm

Terminal Position:

SINGLE

Turn-off Time:

.08 us

Turn-on Time:

.07 us

Trade Compliance

UC2710TG3 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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