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UC2705T

Texas Instruments

UC2705T by Texas Instruments

UC2705T by Texas Instruments is a MOSFET Gate Driver with 5 terminals, operating voltage range of 5-40V. It features a turn-on time of 0.09us and turn-off time of 0.06us, suitable for high side driver applications in various industries due to its bipolar technology and output peak current limit of 1.5A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,709 parts In-Stock

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3,709

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Digiode

USA . 3,120 parts In-Stock

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3,120

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,370 parts In-Stock

1+ parts

$11.105

100+ parts

-

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$11.562

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2,370

$11.105

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$11.562

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DigiPath Technology Company

USA . 303 parts In-Stock

1+ parts

$12.228

100+ parts

$11.250

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303

$12.228

$11.250

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ChromeModa Solutions

Germany . 4,033 parts In-Stock

1+ parts

$12.478

100+ parts

$10.232

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4,033

$12.478

$10.232

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IDEA Electronic Components Group

UK . 960 parts In-Stock

1+ parts

$12.478

100+ parts

$11.854

1k+ parts

$11.230

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960

$12.478

$11.854

$11.230

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AZTECH Wire

Italy . 656 parts In-Stock

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$13.626

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656

$13.626

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One Stop Electronics

USA . 1,469 parts In-Stock

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$15.500

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1,469

$15.500

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Corphita

USA . 3,114 parts In-Stock

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3,114

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Kepictronics

USA . 1,050 parts In-Stock

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1,050

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Overview

Enhance the performance of your MOSFET applications with the UC2705T by Texas Instruments. With a reputation for quality and reliability, Texas Instruments delivers cutting-edge technology in a compact, 5-terminal package. This high-side driver offers fast turn-on and turn-off times, making it ideal for a wide range of industrial and automotive applications. Trust in Texas Instruments to provide you with the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection for the components inside, ensuring durability and longevity of the product.

Maximum Supply Voltage: 40 V

Allows for compatibility with a wide range of power sources, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate into existing circuit designs and installations.

No. of Terminals: 5

Simplifies the wiring process and reduces the chances of errors during installation.

Terminal Form: THROUGH-HOLE

Ensures secure connections and reduces the risk of loose terminals, increasing the overall reliability of the product.

Nominal Output Peak Current Limit: 1.5 A

Provides sufficient power output for driving MOSFETs effectively, ensuring optimal performance of the overall circuit.

Turn-off Time: 0.06 us

The fast turn-off time enhances the efficiency of the product, making it suitable for high-speed applications.

Technical Specifications

MOSFET Gate Drivers UC2705T attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PSFM-T5

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SIP5,.1,67TB

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.7 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.06 us

Turn-on Time:

.09 us

Trade Compliance

UC2705T Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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