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UC2705J

Texas Instruments

UC2705J by Texas Instruments

UC2705J by Texas Instruments is a MOSFET Gate Driver with 8 terminals, operating voltage range of 5-40V. It features a turn-on/off time of 0.06us and peak current limit of 1.5A. Ideal for applications requiring high-speed switching such as power supplies and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,542 parts In-Stock

1+ parts

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5,542

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Digiode

USA . 1,673 parts In-Stock

1+ parts

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1,673

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,157 parts In-Stock

1+ parts

$5.716

100+ parts

-

1k+ parts

$6.509

10k+ parts

-

2,157

$5.716

-

$6.509

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DigiPath Technology Company

USA . 805 parts In-Stock

1+ parts

$6.294

100+ parts

$5.790

1k+ parts

-

10k+ parts

-

805

$6.294

$5.790

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ChromeModa Solutions

Germany . 3,843 parts In-Stock

1+ parts

$6.422

100+ parts

$5.266

1k+ parts

-

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3,843

$6.422

$5.266

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IDEA Electronic Components Group

UK . 2,088 parts In-Stock

1+ parts

$6.422

100+ parts

-

1k+ parts

$5.780

10k+ parts

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2,088

$6.422

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$5.780

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One Stop Electronics

USA . 862 parts In-Stock

1+ parts

$11.500

100+ parts

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862

$11.500

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AZTECH Wire

Italy . 353 parts In-Stock

1+ parts

$12.778

100+ parts

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353

$12.778

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Corphita

USA . 1,069 parts In-Stock

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1,069

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Overview

Elevate your projects with the UC2705J by Texas Instruments, a top-of-the-line MOSFET Gate Driver that guarantees high-quality performance and reliability. Crafted by the renowned manufacturer, this driver is perfect for applications requiring precision and efficiency. With its advanced technology and innovative design, the UC2705J offers customers unparalleled value and benefits. Experience seamless operation and enhanced functionality with this exceptional product. Upgrade your projects today with the UC2705J and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed package body material ensures high reliability and durability, making this product suitable for various demanding applications.

Maximum Supply Voltage: 40 V

With a high maximum supply voltage of 40V, this MOSFET gate driver can handle high voltage requirements, providing flexibility in design.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into different circuit layouts and designs, making installation convenient.

No. of Terminals: 8

Having 8 terminals provides ample connection options, allowing for versatile usage in diverse electronic systems.

Minimum Supply Voltage: 5 V

The low minimum supply voltage of 5V helps in reducing power consumption and is suitable for low-power applications.

Maximum Operating Temperature: 85 °C

This MOSFET gate driver can operate efficiently at high temperatures up to 85°C, ensuring reliable performance in challenging environments.

Technology: BIPOLAR

The bipolar technology used in this gate driver provides precise control over the MOSFET, enhancing overall performance and efficiency.

Nominal Supply Voltage: 20 V

The nominal supply voltage of 20V strikes a balance between power efficiency and performance, making it a suitable choice for various applications.

Turn-on Time: 0.06 us

The quick turn-on time of 0.06 microseconds ensures rapid switching of the MOSFET, enhancing overall system responsiveness and efficiency.

Nominal Output Peak Current Limit: 1.5 A

With a peak current limit of 1.5A, this gate driver can deliver sufficient power to drive the connected MOSFET, ensuring reliable operation.

Technical Specifications

MOSFET Gate Drivers UC2705J attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-GDIP-T8

Length:

9.58 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.06 us

Turn-on Time:

.06 us

Width:

7.62 mm

Trade Compliance

UC2705J Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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